Preparation of Silicon Carbide and Aluminum Silicon Carbide from a Montmorillonite–Polyacrylonitrile Intercalation Compound by Carbothermal Reduction

Both silicon carbide and aluminum silicon carbide have simultaneously been obtained directly from naturally occurring aluminosilicate by carbothermal reduction for the first time. A precursor of a montmorillonite–polyacrylonitrile (PAN) intercalation compound was heated at 1700°C in Ar. For comparison, montmorillonite–carbon mixtures were similarly heated. α-SiC, β-SiC, and Al₄Si₂C₅ formed from the montmorillonite–PAN intercalation compound. Mainly α-Al₄SiC₄ was obtained with ternary carbides from the montmorillonite–carbon mixtures in addition to a large amount of β-SiC. Hence, aluminum silicon carbide formation was affected by the mixing condition of the starting materials.     

Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts

The behaviour of A1/Ti/n-GaAs Schottky contacts under heat treatment at around 400°C have been studied for their application to GaAs MESFETs. Barrier heights have been determined using both I-V and C-V measurements as a function of heat treatment time. Reaction products due to heat treatment have been studied by X-ray diffraction and Auger electron spectroscopy. The A1/Ti/n-GaAs Schottky contacts barrier height shows an $\text{“N”-}\text{shaped}$ variation in response to heat treatment time. A marked reduction in barrier height follows a slight increase at the initial annealing stage. The barrier height then takes a minimum value. The slight increase in barrier height at the initial stage in the heat treatment is brought about by a Ti and GaAs reaction. The marked barrier height reduction is closely correlated to formation of the compound Al₃Ti. The increase in barrier height observed after the reduction can be explained in terms of GaAlAs formation at the metal-semiconductor interface. This seems to indicate that heat treatment is essential for application of Al/Tin-GaAs Schottky contacts to practical devices.     

Diffusion of vanadium,chromium, and manganese in copper

The diffusion coefficients of vanadium, chromium and manaanese in copper have been determined by the residual activity method with radioactive tracers V⁴⁸, Cr⁵¹ and Mn⁵⁴ in the temperature ranges between 955 and 1342 K, between 999 and 1338 K and between 971 and 1253 K, respectively. The temperature dependence of the diffusion coefficients is expressed by the following Arrhenius equations along with the probable errors:D _V/Cu = (2.48 _-0.44 ^+0.53 ) x 10⁻⁴ exp [-(215 ± 2) kJ mol⁻¹/RT] m² per s,D _Cr/Cu = (0.337 _-0.090 ^+0.124 ) x 10⁻⁴ exp [-(195 ± 3) kJ mol⁻¹/RT] m² per s,D _Mn/Cu = (1.02 _-0.18 ^+0.22 ) x 10⁻⁴ exp [-(200 ± 2) kJ mol⁻¹/RT] m² per s. Anomalous penetration profiles for the diffusion of Cr⁵¹ and Mn⁵⁴ in the present results suggest that experimental results onD _Cr/Cu andD _Mn/Cu in the past have been influenced by oxidation and evaporation of the chemically active radiotracers during annealing for diffusion. formerly Graduate Student, Tohoku University     

Interdiffusion in Co-Mn alloys

Interdiffusion coefficient in cobalt-manganese alloys has been determined by Matano's method in the temperature range between 1133 and 1423 K on (pure Co)-(Co-30.28 at. pct Mn alloy) and (pure Co)-(Co-51.76 at. pct Mn alloy) couples. This, ∼D, has been found to increase with the increase of manganese content. However, the activation energy (∼Q) and frequency factor ( ₀) show a maximum at about 10 at. pct Mn. The concentration dependence of and has been discussed taking into account the thermodynamic properties of the alloy. The difference in between the ferro- and paramagnetic phases in Co-5 at. pct Mn alloy has been found to be 24 kJ/mol, which is larger, than that for the diffusion of Mn⁵⁴ in this alloy. Further it has been found that the Kirkendall marker moves toward manganese-rich side, showing that manganese atoms diffuse faster than cobalt atoms. From the marker shift, the intrinsic diffusion coefficients,D _Co andD _Mn, at 33 at. pct Mn have been determined as follows:D _Co=0.22×10⁻⁴ exp(−263 kJ mol⁻¹/RT) m²/s, andD _Mn=0.98×10⁻⁴ exp(−229 kJ mol⁻¹/RT) m²/s.     

Chlorine Gas Sensing Properties of ZnO-CaO Ceramics

The chlorine gas sensing properties of pure ZnO (PZ) and CaO-added ZnO (CAZ) ceramics with relative densities of 48–65% were investigated from 25–380°C in Cl₂ concentration range from 0.9 ppm to 20 ppm using air or N₂ as a carrier gas. In the entire temperature range, the conductivity of PZ and CAZ ceramics decreased by introducing Cl₂ gas. 3 mol% CAZ showed a Cl₂ sensitivity ((0)/(Cl₂)) of 10 for 0.9 ppm Cl₂ in air at 300°C, suggesting its usefulness for sensing of a low-concentration Cl₂ gas below 1 ppm. The CaO addition was found to decrease the Cl₂ sensitivity but to improve the recovery process after removing Cl₂ gas. These effects are attributed to changes in the amount and stability of adsorbed oxygen and to subsequent changes in Cl₂ adsorption behavior.     

Homolog of a-factor receptor gene in Saccharomyces exiguus

Homologs of Saccharomyces cerevisiae STE3, a -factor receptor gene were detected from S. exiguus NFRI 3539 by low stringency Southern hybridization. This strain might have at least two types of homolog. One of these homologs, designated as e-STE3 was cloned. Its nucleotide sequence revealed 60% identity to STE3. The putative protein coding region consisted of 453 amino acid residues. The amino acid sequence identity between STE3 and e-STE3 was 62%, and that of the N-terminal 303 amino acid residues considered to be the pheromone binding domain was 79%. The e-STE3 sequence submitted to the DDBJ/EMBL/GenBank data libraries is available under Accession Number AB003086. © 1998 John Wiley & Sons, Ltd.     

Development of Nb-Ti cable with ultrafine filament and high-resistivity matrix for ac use

Superconducting ac machines such as transformers and reactors are expected to have an important role in future electric power transport lines. In these machines, superconducting coils are wound with superconducting cables that have low ac loss, stable ac quenching current, and high normal resistivity. We have developed Nb-Ti superconducting cables with ultrafine filaments and high-resistivity matrix for these coils. One such cable is a double-stranded round structure using 0.2-mm strands with 0.14-μm filaments and Cu-30wt%Ni as a matrix material. The 50-Hz quenching current without external magnetic field exceeds 1400 Arms. The ac loss is 15 kW/m³ at a transverse external magnetic field of 0.5 T, 50 Hz, and the normal resistivity is 0.21 Ω/m at 0 T, 10 K. © 1997 Scripta Technica, Inc. Electr Eng Jpn, 120(2): 8–18, 1997     

Synthesis of KTiOPO4 (KTP) Thin Films Using Metallo-organics

Crack-free and highly transparent KTiOPO₄ (KTP) thin films were synthesized by the sol-gel method using a homogeneous precursor solution prepared from ("BuO)₂-P(O)(OH), Ti(OEt)₄, and KOEt in EtOH. Precipitated powders from the solution crystallized directly to KTP above 550°C. Polycrystalline KTP thin films were obtained at 600°C on various substrates. On NdAlO₃(100) substrates, KTP films with (101) and (240) preferred orientations were formed at 600°C. KTP films on glass substrates showed a refractive index of 1.75 and an absorption edge of 350 nm. KTP films exhibited the second harmonic generation of the 532 nm light on irradiaton with 1064 nm light.     

Gas permeation property of polyaniline films

We examined the influence of polyaniline (PAn)'s unit sequence and doping with low molecular weight dopants or polymer dopants on permeation property. It was found that CO₂ permeability was increased by the formation of a quinonediimine unit in PAn with the oxidation. CO₂ sorption amount of PAn was decreased by oxidation. The increase of CO₂ permeability with oxidation, therefore, resulted from the increase of diffusivity, which was attributable to morphological variation by the increase of a quinonediimine unit. The permselectivity of PAn films was found to be remarkably improved by doping. In particular, the selectivity value of the PAn film doped with polyvinyl sulphonic acid as a polymer dopant went up to over 2,000. This remarkable increase of selectivity was found to result in the increase of selectivity, depending on diffusivity. It was also found that the permselectivity of the PAn film doped by polymer dopants was surpassed, as compared with that doped by low molecular dopants. © 1995 John Wiley & Sons, Inc.     

Liquid-Solid mass transfer in a slurry bubble column and a gas-liquid-solid three-phase fluidized bed

Mass transfer coefficients between particles and liquids in a slurry bubble column and a three-phase fluidized bed containing small size particles were obtained with two mass transfer systems: (1) K⁺ –Na⁺ ion-exchange in cation-exchange resin bead beds, including anion-exchange resin beads as inert particles; (2) zinc dissolution by HCl in zinc-plated glass bead beds, and in beds of non-plated glass beads. Operating parameters were gas velocity, liquid velocity, particle diameter, and particle concentration. The dependence of mass transfer coefficients on these parameters is discussed from the viewpoint of the energy supplied into the systems. Correlations of the experimental data using dimensionless groups are compared to previous correlations.