p16 and K-ras gene mutations in the intraductal precursors of human pancreatic adenocarcinoma

Pancreatic adenocarcinoma is thought to arise from a noninvasive neoplastic precursor, the pancreatic intraductal lesion (PIL). Mutations of the K-ras gene are known to occur in PILs, but their high prevalence among PILs within the general population probably limit the use of K-ras as a marker of eventual clinical risk. In search of genetic constellations that might indicate the progression of some PILs toward an invasive phenotype, mutations at both the K-ras and p16 genes were sought within PILs of 10 pancreata resected for adenocarcinoma. K-ras mutations were present in most PILs and in nearly all PILs having nuclear atypia. In half of the patients, two or more unique K-ras mutations were identified among distinct PILs, which is evidence for the separate clonal evolution of multiple pancreatic neoplasms within individual patients. p16 alterations (one homozygous deletion and three point mutations) were found in 4 of the 10 carcinomas; these four pancreata harbored p16 alterations in three of nine PILs, of which one was a "histologically early" lesion. Two patients had p16 alterations in PILs matching those of the associated carcinomas. p16 mutations were not found in PILs of pancreata having wild-type p16 in the carcinoma, nor were they found in ducts having normal histology. It is suggested that alterations of the p16 gene affect a subset of PILs that contain mutations of the K-ras gene and that these mutations might identify high-risk precursors of the invasive malignancy.     

A Methodology Based on Pulse-Velocity Measurements to Quantify the Chemical Degradation Levels in Thin Mortar Specimens

In this research, ultrasonic pulse echo measurements are used to quantify through thickness chemical degradation in thin mortar specimens. The degradation level is predicted using the time of travel of the acoustic wave through the thickness of the structure. The front and back wall interaction reflections are used to obtain additional information from very early stage degradation. The pulse-velocity of sound waves as a function of the thickness of the layers within the structure is described. With knowledge of the pulse-velocity in pristine and fully degraded conditions, it is possible to determine the complete range of degradation length over the layer thickness. The method is applicable for leaching of calcium and acidic attack. The acoustic measurements were verified with destructive testing. The correlation between the acoustic and non-acoustic experiments agree with the described pulse-velocity and degraded depth function. The method based on ultrasonic measurements can be implemented in other thin-layered structures.     

Contact and edge effects in graphene devices

Electrical transport studies on graphene have been focused mainly on the linear dispersion region around the Fermi level and, in particular, on the effects associated with the quasiparticles in graphene behaving as relativistic particles known as Dirac fermions. However, some theoretical work has suggested that several features of electron transport in graphene are better described by conventional semiconductor physics. Here we use scanning photocurrent microscopy to explore the impact of electrical contacts and sheet edges on charge transport through graphene devices. The photocurrent distribution reveals the presence of potential steps that act as transport barriers at the metal contacts. Modulations in the electrical potential within the graphene sheets are also observed. Moreover, we find that the transition from the p- to n-type regime induced by electrostatic gating does not occur homogeneously within the sheets. Instead, at low carrier densities we observe the formation of p-type conducting edges surrounding a central n-type channel.     

Efficient charge extraction out of nanoscale Schottky contacts to CdS nanowires

Charge recombination dynamics in semiconductor nanostructures is of vital importance for photovoltaic or photodetector device applications. We use local photocurrent measurements to explore spatially separated drift- and diffusion-currents close to the edge of gold contacts on top of cadmium sulfide nanowires. By theoretical modeling of the experimental photocurrent profiles, the electron diffusion length and lifetime in the wires are obtained to 0.8 μm and 1 ns, respectively. In contrast to bulk devices, the nanoscale dimensions of the involved Schottky contacts enable a highly efficient charge carrier extraction from below the electrodes. This finding paves the way for designing nanostructured optoelectronic devices of improved performance.     

Novel Zirconia–Alumina Nanocomposites Combining High Strength and Toughness

Alumina toughened zirconia (ATZ) composites, combining a matrix of tetragonal zirconia polycrystals (TZP) and an alumina dispersion, are known for their high strength, toughness, and abrasion resistance. Depending on the type of stabilizing oxide in TZP the materials can be tailored to be either extremely strong (Y–TZP) or extremely tough (Ce–TZP) with a considerable cutback in the complementary property. Novel nanocomposite ATZ materials consisting of TZP co‐stabilized by neodymium and yttrium oxide (Nd–Y–TZP) combined with a reinforcement of 0–40 vol% alumina were produced to achieve high bending strength of 1200–1500 MPa at a toughness of 8–12 MPa·√m. TZP was produced by coating monoclinic nanopowder with 1.5 mol% yttria and 1.5 mol% neodymia. The powder was then blended with submicron size alumina and consolidated by hot pressing. Mechanical and microstructural properties were investigated.     

Site‐Specific Self‐Assembled Liquid‐Gated ZnO Nanowire Transistors for Sensing Applications

A scalable bottom‐up solution‐based approach for the site‐specific realization of ZnO nanowire (ZnO‐NW)‐based field‐effect transistors for sensing applications in liquids is reported. The nanowires are grown across predefined electrodes patterned by photolithography. Site specificity is attained by the use of nanoparticles acting as seeds. Using integrated on‐chip microchannels and microfabricated gate electrodes, electrochemically gated ZnO‐NW network transistors functioning in liquids are demonstrated. The optimized devices are rendered sensitive to pH through chemical functionalization. The unique combination of the sensitivity, site specificity, scalability, and cost effectiveness of the technique opens up avenues for the routine realization of one‐dimensional nanostructure‐based chemical and biosensors for analytical and diagnostic applications.     

Financing concentrating solar power in the Middle East and North Africa—Subsidy or investment?

The paper presents a strategy for the market introduction of concentrating solar power (CSP) plants in the Middle East and North Africa (MENA) that will not require considerable subsidization and will not constitute a significant burden for electricity consumers in the region. In the first section, the paper explains the need of MENA countries for sustainable supply of electricity and calculates the cost of electricity for a model case country. In the second part, the cost development of concentrating solar power plants is calculated on the basis of expectations for the expansion of CSP on a global level. After that, the challenges for the market introduction of CSP in MENA are explained. Finally, we present a strategy for the market introduction of CSP in MENA, removing the main barriers for financing and starting market introduction in the peak load and the medium load segment of power supply. The paper explains why long-term power purchase agreements (PPA) for CSP should be calculated on the basis of avoided costs, starting in the peak load segment. Such PPA are not yet available, the paper aims to convince policy makers to introduce them.