Fracture toughness evaluation of adjacent flow weld line in polystyrene by the SENB method

Fracture toughness of adjacent flow weld lines, defined as weld lines that occur when two flow fronts meet and continue to flow together in the same direction (meld line or hot weld line), was evaluated by the single‐edge notched‐bend (SENB) method using three differently‐shaped obstructive pins. Although the fracture toughness varied depending upon the shapes of the pin, the values could be standardized as the distance from the meeting point of the two flow fronts flowing around the pin. The fracture toughness decreased drastically from the meeting point along the weld line and then slightly increased. These characteristic features could be explained by flow‐induced molecular orientation at the weld line interface. The molecules around the meeting point that were initially oriented parallel to the weld line due to fountain flow were able to relax, and then entanglement across the weld line interface developed because the flow stopped in the middle of the filling process, resulting in high fracture toughness. In contrast, the material at the downstream side of the weld line continued flowing during the filling process, being stretched along the flow direction. So, the molecular orientation at this area could not relax. In addition, the V‐notch shape, i.e., the depth and length at the surface of the weld line, which also varied depending on the shape of the obstacles, was considered to be identical when the meeting point was allowed to be a datum point. Thus, the meeting point was found to be a significant factor when the properties of weld lines are investigated. POLYM. ENG. SCI., 45:1059–1066, 2005. © 2005 Society of Plastics Engineers     

A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV.     

Diffusional behavior of multi-arm star polymers by H pulsed field gradient spin-echo NMR method

The diffusional behavior of multi-arm star-shaped p(tBMA) was investigated in a concentration range from dilute to semidilute region with ¹H pulsed field gradient spin-echo NMR (PFGSE-NMR). An 142-arm star-shaped p(tBMA) showed two diffusional mode, which reflected the coexistence of liquid ordering phase and liquid phase near the ordering transition. On the other hand, for star-shaped p(tBMA) with 55 arms showed a single diffusional relaxation in all concentration ranges during observation time. In the semidilute region, the relationship between the diffusion coefficient against the polymer concentration was affected strongly not only the arm number but also liquid ordering structure.     

Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

Strengthening of Preloaded RC Beams Using Hybrid Carbon Sheets

Reinforced concrete (RC) beams subject to service loads of 40 or 60% of steel yielding were strengthened using hybrid continuous carbon fiber sheets. The hybrid systems were made of high-strength and high-modulus carbon sheets, and compared with systems using only high-strength carbon. It was found that the use of high-modulus carbon sheets in hybrid systems could increase the yielding load, the flexural stiffness, the postyielding ductility, and reduce the crack opening in concrete. The slope changes on load-deflection curves at steel yielding are not noticeable in hybrid systems. The tensile strains developed in hybrid sheets after the fracture of high-modulus carbon are higher in magnitude and distributed in a larger area, leading to an ultimate carbon fracture with concrete crushing. These unique features are attributed to the high stiffness and low ultimate tensile strain of the high-modulus carbon fibers which stiffen the structures, avoid or delay the fiber-reinforced polymer debonding, and facilitate the deformability during their subsequent breakdown.     

Asymmetric synthesis of 4'-alpha-alkylcarbovir derivatives

Asymmetric synthesis of 4'-alpha-alkylcarbovir derivatives 3 were achieved based on Sakai's asymmetric alkylation of beta-keto esters. The key carbocyclic intermediate 12 was synthesized from 6 via an eleven-step sequence. Coupling of 12 with 2-amino-6-chloropurine followed by desilylation and subsequent hydrolysis gave the target compounds 3 in moderate yields.