晋城市煤炭加工利用现状、存在问题及发展建议

阐述了晋城市煤加工利用的现状 ,分析了煤炭加工利用存在的问题 ,提出了今后的发展建议     

PIMS在企业生产经营中的应用

介绍PIMS在企业生产经营中的应用 ,运用PIMS可对炼油化工企业进行原油采购决策、加工保本点预算、效益预测、物流分配、整体流程优化、投资分析、瓶颈制约因素探讨、原料和产品库存管理、经济活动分析等 ,并结合生产装置特点和市场环境影响因素 ,获取最大生产经营效益。根据影子价格 ,找出提高效益的潜力 ,确定产品、中间产品或半成品合理价格 ,规范关联交易 ,增强企业市场应变能力 ,提高经济效益与管理水平。     

印刷质量控制的基本方法(一)综述

无论哪一种印刷品的生产都要经过若干个工艺过程，才能将原稿上的图文信息转移到承印物上。由于印刷技术的飞跃发展，标准化和质量控制成为一个很重要的问题。标准化和质量控制在很大程度上是依靠仪器和控制装置来实现的。科学技术的极大发展，大大地推动了印刷技术的发展，印刷所使用的原材料和工艺得到了很大的改进，逐步实现了标准化，提高并稳定了生产高质量产品的能力。目前我们评价印刷品质量的优劣大致有三种方法：主观评价法、客观评价法和综合评价法。主观评价法，是以原稿为基础对照样张来评价。这里有人为的因素，根据评价人的知…     

Skeletal Isomerization and Inter—molecular Hydrogen Transfer Reactions in Catalytic Cracking

Bimolecular hydrogen transfer and skeletal isomerization the important secondary reac-tions among catalytic cracking reactions,which affect product yield distribution and product quality,Catalyst properties and operating parameters have great impact on bimolecular hydrogen transfer and skeletal isomerization reactions .Bimolecular hydrogen transfer activity and skeletal isomrization activity of USY-containing catalysts are higher thn that of ZSM-5-containing catalyst.Coke deposition on the active sites of catalyst may suppress bimolecular hydrogen transfer activity and skeletal isomer-ization activity of catlys in different degrees.Short raction time causes a decrease of hydrogen trans-fer reaction,but and increase of skeletal isomerization reaction compared to cracking reaction in catalytic cracking process.     

铁路冷藏运输运价分析

本文对各种运输方式易腐货物的运价进行了比较分析,对铁路冷藏运输的现行运价和保本运价进行了讨论,提出了铁路冷藏运输运价改革的若干建议,可供铁路进行冷藏运输改革参考。     

二过碘酸合银（Ⅲ）钾引发丙类酸甲酯在淀粉上接枝共聚合反应的研究

研究了由二过碘酸合银（Ⅲ）钾（简称Ag(Ⅲ））与可溶性淀粉组成的氧化还原体系，于碱性介质中引发淀粉的接枝共聚合反应，得到高接枝效率的接枝共聚物，测定了引发剂浓度、单体浓度、pH值和反应温度对接枝参数的影响，并探讨了引发机理。     

宽带无源光网络(BPON)关键技术的发展与研究

宽带无源光网络（BPON）是实现宽带、多业务接入的理想物理平台，本文介绍了BPON网络的发展，重点讨论了将ATM技术和PON技术相结合的APON系统及其升级系统SuperPON的基本结构和关键技术，对最近兴起的将以太技术和PON技术相结合的EPON系统的基本概念和工作原理也进行了阐述，并对未来BPON技术的发展进行了展望。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs