Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

Concurrent error detection in array multipliers forGF(2m) fields

Based on Lee-Lu-Lee's array multipliers and the RESO method, a concurrent error detection scheme in array multipliers for GF(2^m ) fields is presented and only one clock cycle is added. The fault tolerant capability in such array multipliers is also included and only two extra clock cycles are required     

Scalable Gaussian Normal Basis Multipliers over GF(2<Superscript><Emphasis Type=Italic>m</Emphasis></Superscript>) Using Hankel Matrix-Vector Representation

This work presents a novel scalable multiplication algorithm for a type-t Gaussian normal basis (GNB) of GF(2^m). Utilizing the basic characteristics of MSD-first and LSD-first schemes with d-bit digit size, the GNB multiplication can be decomposed into n(n + 1) Hankel matrix-vector multiplications. where n = (mt + 1)/d. The proposed scalable architectures for computing GNB multiplication comprise of one d × d Hankel multiplier, four registers and one final reduction polynomial circuit. Using the relationship of the basis conversion from the GNB to the normal basis, we also present the modified scalable multiplier which requires only nk Hankel multiplications, where k = mt/2d if m is even or k = (mt − t + 2)/2d if m is odd. The developed scalable multipliers have the feature of scalability. It is shown that, as the selected digit size d ≥ 8, the proposed scalable architectures have significantly lower time-area complexity than existing digit-serial multipliers. Moreover, the proposed architectures have the features of regularity, modularity, and local interconnection ability. Accordingly, they are well suited for VLSI implementation.     

Fabrication and properties of PLZT ceramics from spray-dried aqueous solution

PLZT ceramics with the composition of 9/62/38 (La/Zr/Ti) were fabricated from spraydried aqueous solution. Complete crystallization of the spray-dried powder is achieved after 1 hr calcination at 650‡ C as compared to 800‡ C, 1 hr for conventional mixedoxide method. Sintering environment plays an important role in the densification of PLZT ceramics. Densities of the atmosphere sintered samples are much higher than those of normal sintered ones. PLZT ceramics derived from spray-dried powders have properties comparable to those derived from sol-gel ones. The spray-dried method presents a less expensive and more effective approach in the synthesis of PLZT ceramics.     

Code-pattern insensitive embedded ROMs using dynamic bitline shielding technique

A dynamic bitline shielding (DBS) technique is proposed for high-speed via-programming ROMs, to eliminate code-pattern-dependent crosstalk-induced read failure (CIRF) and increase code-pattern coverage. Fabricated 256 Kb conventional and DBS ROMs demonstrated that the DBS technique can eliminate the CIRF and operate with a small sensing margin.     

An AlGaAs-GaAs dual-wavelength photodetector with 500 Å resolution

An Au-(N)Al_0.07Ga_0.93As-(n)GaAs Schottky barrier dual-wavelength photodetector with 500 Å resolution has been developed. By varying the reverse bias, the photothreshold of the detector can be changed from 0.82 to 0.87 μm. The diode can thus be applied to demultiplex two optical signals with respective wavelengths of 0.8 and 0.85 μm. This provides a useful detector for use in a dual-channel optical communication system. The principle is based on the band readjustment effect which is due to the interaction of the closely-spaced Au-AlGaAs Schottky barrier and the AlGaAs-GaAs heterojunction.     

High-Temperature Stability of 650-nm Resonant-Cavity Light-Emitting Diodes Fabricated Using Wafer-Bonding Technique on Silicon Substrates

AlGalnP-based visible 650-nm GalnP-AlGalnP resonant-cavity light-emitting diodes (RCLEDs) with high-temperature stability were fabricated by wafer-bonding techniques on Si substrates. In this study, the metal-bonding RCLEDs (MBRCLEDs) devices were designed with 84-mum apertures for light output. The MBRCLEDs with a maximum wall-plug efficiency of 13.7% were demonstrated at an injection current of 2.5 mA. In addition, the improved heat sinking of MBRCLEDs led to lower junction temperature, and resulted in a very low power decay of 0.31 dB from room temperature to 100degC at an injection current of 20 mA.     

BCB-bridged distributed wideband SPST switch using 0.25-/spl mu/m In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic HEMTs

In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-/spl kappa/ benzocyclobutene (BCB) bridged technology. The current gain cutoff frequency, and the electron transit time of In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As mHEMTs have been investigated. By analyzing the extrinsic total delay time, the effective velocity of electrons can be estimated, and the average velocity is 2.3/spl times/10/sup 7/cm/s. The dc-30 GHz distributed wideband SPST switch exhibits an insertion loss of less than 5.5 dB, and an isolation larger than 30 dB, which is the first demonstration of the high-isolation of InAlAs-InGaAs mHEMTs monolithic switch. As to the power performance, this switch can handle the power up to 12 dBm at 2.4 GHz. After over 250 h of 85-85 (temperature =85/spl deg/C, humidity =85%) environmental evaluation, this BCB passivated and bridged microwave and monolithic integrated circuit switch demonstrates reliable RF characteristics without any significant performance change, which proves that this process using the low-/spl kappa/ BCB layer is attractive for millimeter-wave circuit applications.     

Broad-band dual-polarized single microstrip patch antenna with highisolation and low cross polarization

This paper presents a new design of a broad-band dual-polarized single microstrip patch antenna with highly decoupled input ports and low cross-polarization (XP) radiation. A prototype of the proposed antenna with center frequency at 1800 MHz is presented. Both the dual linear polarizations have 10-dB return-loss impedance bandwidths greater than 14% and high decoupling between the two input ports (S₂₁ less than -40 dB across the entire bandwidths) is obtained. Moreover, the XP radiation in the principal planes of the dual linear polarizations is seen to be less than -20 dB