哈得4联合站技术改造

位于塔克拉玛干大沙漠腹地的哈得4油田,2004年成为全国最大的沙漠油田,2005年产量达到200×104t。在对联合站存在问题逐一分析的基础上,提出了技术改造的措施。现场采集的运行数据表明技术改造效果明显,增强了流程可靠性,提高了自动化水平,降低了能耗。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

碱法造纸黑液驱油研究

在玻璃细珠充填柱人造岩心模型上进行了碱法造纸黑液驱替稠油的实验研究，考察了稠油酸值、盐、温度、岩心渗透率、注入量和注入方式的影响。在实验条件下碱法造纸黑液驱稠油的采收率较水驱提高２５％     

煤矿生产、安全调度LED电子大屏幕显示系统的设计

通过比较煤矿生产、安全调度显示方式的优缺点，提出和分析了适合于煤矿生产安全调度的ＬＥＤ电子大屏幕显示系统配置、功能及特点。     

On the determination of optimal transition profile of a stepped bar in tension or in torsion by BEM

The objective is to have uniformly distributed tangential stresses on the transition profile of a stepped bar subjected to tensile and torsional loading using an axisymmetric boundary element formulation. The transition curve is represented by the Langragian interpolation polynomial with progressive degrees to avoid shape distortion during the optimization procedure. The calculated result is compared with that obtained by fluid dynamics given in the literature. It is seen that the transition curve obtained in this paper is reasonable.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.