编码解码芯片HD3-6408-9及其应用

编码解码芯片HD3 64 0 8 9是一种高性能的CMOS器件。这种大规模芯片主要由编码器和解码器两部分组成。在数据传输应用中 ,采用两个独立的单片机系统 ,利用编码解码芯片 (HD3 64 0 8 9)组成数字信号的接收、发送及显示部分来完成数据传输功能     

孔西潜山奥陶系原生油藏成藏时期探讨

黄骅坳陷孔西潜山发现奥陶系（孔古3井、孔古7井）低产原生油藏和石炭-二叠系原生油气藏（孔古4井），油源对比结果证明，前者原油主要源于中奥陶统马家沟组灰岩，后者油气主要源于石炭系太原组及二叠系山西组煤系泥岩。根据孔古3井油藏的两期流体包裹体及储集层自生伊利石K-Ar年龄测定结果，油藏属两期成藏，第一期为晚三叠世（距今222.51～240.34Ma），第二期为第三纪，以晚第三纪为主。     

DCS在50MW供热机组上的应用

介绍I/A’S系统在巨化热电厂八号50MW供热机组上应用实例,并从DCS系统的整体设计到实现的功能、控制效果等多方面进行了分折,总结了调试和运行经验。     

首钢外购焦炭质量恶化后的高炉生产实践

针对焦炭质量劣化的状况，高炉操作以活跃炉缸为主，从上下部调剂入手，采取疏导煤气、控制合理的实际风速和鼓风动能、缓解焦炭在高温区的粉化等措施，有效地改善了高炉的顺行状况，并逐步恢复高炉指标。     

A single-chip storage LSI for home networks

Network direct attached storage (NDAS) is a network storage architecture that allows direct attachment of existing ATA/ATAPI devices to Ethernet without a separate server. Unlike other architectures such as NAS, SAN, and USB mass storage, no server computer intervenes between the storage and the client hosts. We describe an NDAS disk controller (NDC) amenable to low-cost single-chip implementation that processes a simplified L3/L4 protocol and converts commands between ATA/ATAPI and Ethernet, while the remaining complex tasks are performed by remote hosts. Unlike NAS architectures that use TCP/IP, NDAS uses a TCP-like lean protocol that lends itself well to high-performance hardware realization. Thanks to the simple NDAS architecture and protocol, an NDC implemented on a single 4 mm /spl times/ 4 mm chip in 0.18 /spl mu/m CMOS technology achieves a maximum throughput of 55 Mbytes/s on gigabit Ethernet, which is comparable to that of a high-performance disk locally attached to a host computer.     

狭小场地条件下大跨度预应力混凝土拱板的运输及吊装

介绍了大跨度预应力混凝土拱板在狭小场地条件下的起模、运输及空间滑移吊装的方法，经在众多中直粮库中的应用，证明该方法简单、适用、经济。     

In-Situ observation on microfracture behavior ahead of the crack tip in 63Sn37Pb solder alloy

in-situ transmission electron microscopy (TEM) tensile tests on as-cast and aged 63Sn37Pb solder alloys were conducted, and the fracture behavior in nanometer scale ahead of the crack tip was inspected and discussed. Results show that the fracture was completed by connecting the discontinuous cracks or voids. Dislocation behavior was concentrated along the grain boundaries for as-cast samples, and displayed mainly as dislocation climb. The crack was intergranular dominated under the lower strain rate. While remarkable mutual dislocation emission was detected in the aged solder. Transgranular cracks were dominant in the fractured area, and they propagated by linking up with the nanometer scale cracks ahead of the crack tips under the effective promotion of the inverse dislocation emission. At the same time, the partial interphase or intergranular cracks in the thinned area were also found. Under this condition, a new critical stress intensity factor K _c ^′ to define the mutual dislocation emission was proposed.