Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

The anisotropic effect of a weak magnetic field on the photoconductivity of C<Subscript>60</Subscript> single crystals

The effect of crystal orientation on the photogeneration of free charge carriers was studied for C₆₀ single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C₆₀ crystal.     

Popular biorthogonal wavelet filters via a lifting scheme and its application in image compression

A technique using a lifting scheme is presented for constructing compactly supported wavelets whose coefficients are composed of free variables locating in an interval. An efficient approach-based wavelet for image compression is developed by selecting the coefficients of the 9-7 wavelet filter and associated lifting scheme. Furthermore, the rationalised coefficients wavelet filter that can be implemented with simple integer arithmetic is achieved and its characteristic is close to the well known original irrational coefficients 9-7 wavelet filters developed by A. Cohen et al. (Commun. Pure Appl. Maths., vol.45, no.1, p.485-560, 1992). To reduce the computational cost of image coding applications further, an acceleration technique is proposed for the lifting steps. Software and hardware simulations show that the new method has very low complexity, and simultaneously preserves the high quality of the compressed image.     

Thermodynamic stability of GaInSb,InAsSb, and GaInP epitaxial films

The miscibility gaps and the critical temperatures of spinodal decomposition of ternary semiconducting Ga-In-Sb, Ga-In-P, and In-As-Sb systems are calculated by taking into account the deformation energy and the effect of plastic relaxation caused by the misfit dislocations. It is shown that taking into consideration elastic energy narrows the ranges of spinodal decomposition and lowers its critical temperature. The introduction of the phenomenological parameter into Matthews-Blakeslee formula makes it possible to reach a satisfactory agreement between theoretically calculated values of critical thickness of epitaxial films and the experimental data.     

Effects of surface charge, micro-bubble size and particle size on removal efficiency of electro-flotation.

Flotation is a water treatment alternative to sedimentation, and uses small bubbles to remove low-density particles from potable water and wastewater. The effect of zeta potential, bubble size and particle size on removal efficiency of the electro-flotation process was investigated because previous model-simulations indicated that these attributes are critical for high collision efficiency between micro-bubbles and particles. Solutions containing Al3+ as the metal ion were subjected to various conditions. The zeta potentials of bubbles and particles were similar under identical conditions, and their charges were influenced by metal ion concentration and pH. Maximum removal efficiency was 98 and 12% in the presence and absence of flocculation, respectively. Removal efficiency was higher when particle size was similar to bubble size. These results agree with modelling simulations and indicate that collision efficiency is greater when the zeta potential of one is negative and that of the other is positive and when their sizes are similar.     

Cover Picture: Arresting,Fixing, and Separating Dimers Composed of Uniform Silica Colloidal Spheres (Adv. Funct. Mater. 12/2006)

In colloidal suspensions of silica, particles undergo constant collisions. By controlling various parameters, the repulsive barrier can be reduced, thereby substantially increasing the number of collision‐induced dimerization events. Xia and co‐workers report on p. 1627 that the dimers could be arrested and then permanently fixed by introducing a small amount of fresh tetraethylorthosilicate into the colloidal suspension, with monodisperse dimer yields of up to 50 %. This yield could be increased to 80 % by centrifugation in a density gradient medium. When fresh tetraethylorthosilicate is introduced into a colloidal suspension of silica spheres, it hydrolyzes and condenses in situ to arrest and fix the dimers resulting from constant collisions between the spheres. By optimizing the experimental parameters (including the length of aging time) and the diameter of the silica spheres, as well as the concentrations of counterions, water, and ammonia, it is possible to routinely produce monodisperse dimers with a yield as high as 50 %. When combined with centrifugation using a density gradient medium, the yield of such dimers could be further increased to 80 %. It is believed that this method will provide a simple and versatile approach to the high‐volume production of dimers from spherical colloids composed of different materials. These dimers may find widespread use in a range of applications such as fabrication of photonic crystals and fundamental studies related to colloidal science.     

Synthesis and characterization of biocompatible hydroxyapatite coated ferrite

Ferrite particles coated with biocompatible phases can be used for hyperthermia treatment of cancer. We have synthesized substituted calcium hexaferrite, which is not stable on its own but is stabilized with small substitution of La. Hexaferrite of chemical composition (CaO)_0.75(La₂0₃)_0.20(Fe₂O₃)₆ was prepared using citrate gel method. Hydroxyapatite was prepared by precipitating it from aqueous solution of Ca(NO₃)₂ and (NH₄)₂HPO₄ maintaining pH above 11. Four different methods were used for coating of hydroxyapatite on ferrite particles. SEM with EDX and X-ray diffraction analysis shows clear evidence of coating of hydroxyapatite on ferrite particles. These coated ferrite particles exhibited coercive field up to 2 kOe, which could be made useful for hysteresis heating in hyperthermia. Studies by culturing BHK-21 cells and WBC over the samples show evidence of biocompatibility. SEM micrographs and cell counts give clear indication of cell growth on the surface of the sample. Finally coated ferrite particle was implanted in Kasaulli mouse to test its biocompatibility. The magnetic properties and biocompatibility studies show that these hydroxyapatite coated ferrites could be useful for hyperthermia.     

A Digital Deformation Vacuum Gauge with an LC-Generator

The design of a sylphon bellows sensor and the basic circuits of an LC-generator and of a microprocessor unit are presented. An analytical pressure–frequency conversion function and a special method of adjusting the sensor ensure an error of less than 0.05%. The dynamic range is up to 10⁵. The instruments developed cover the ranges 10³, 10⁴, and 10⁵ Pa.     

A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-/spl mu/m CMOS

A 2-GHz direct-conversion receiver for wide-band code division multiple access (WCDMA) is presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth-order baseband channel select filters with programmable gain. Quadrature local oscillator (LO) signals are generated on chip in a frequency divider flip-flop. An external interstage filter between the LNAs rejects transmitter leakage to relax demodulator linearity requirements. A low-voltage demodulator topology improves linearity as well as demodulator output pole accuracy. The active-RC baseband filter uses a programmable servo loop for offset compensation and provides an adjacent channel rejection of 39 dB. Programmable gain over 71-dB range in 1-dB steps is merged with the filter to maximize dynamic range. An automatic on-chip frequency calibration scheme provides better than 1.5% corner frequency accuracy. The receiver is integrated in a 0.13-/spl mu/m CMOS process with metal-insulator-metal (MIM) capacitors. Measured receiver performance includes a 6.5-dB noise figure, IIP2 of +27 dBm, and IIP3 of -8.6 dBm. Power consumption is 45 mW.     

Untersuchung der Verteilung und Intensität filamentierter Barrierenplasmen für die Behandlung von Oberflächen

The application of barrier discharges at atmospheric pressure in air expands on the market of plasma technology, because it is an ecological and cost‐effective alternative to other processes of surface treatment. These plasmas usually consist of a multitude of spatially and temporally localized filaments, whose distribution should be as even as possible for homogeneous treatment. This holds especially for the plasma treatment of sensitive goods such as wool or other textiles. In equipment for continuous pass of material the barrier arrangements often consist of a system cylinder – cylinder or cylinder – plane, whereby the gap width changes locally. Space distribution and intensity of filaments has been investigated by means of short‐time photography and spatially resolved measurement of current distribution and energy distribution derived from it. The local dependency found can be explained by means of a capacitive equivalent circuit.