Dynamic lightpath establishment considering four-wave mixing in multifiber WDM networks

This paper proposes a dynamic lightpath establishment scheme considering four-wave mixing (FWM) in multifiber wavelength-division multiplexed (WDM) all-optical networks. The FWM is one of the most important physical impairments to be resolved in WDM networks because the FWM induces nonlinear inter-channel crosstalk and decays the performance of WDM networks. In WDM networks, data are transmitted via lightpaths. When the effect of FWM crosstalk is large, it is highly possible that data transmission fails even if lightpaths are correctly established. The proposed scheme aims to avoid not only the blocking of lightpath establishment but also the accumulation of FWM crosstalk by means of ingenious selection of routes, wavelengths, and fibers for lightpath establishment. In the proposed scheme, a route and a wavelength are selected for each lightpath based on wavelength availability and wavelength placement of established lightpaths. Furthermore, fibers on the route are selected based on estimated FWM power. In this paper, we show the effectiveness of the proposed scheme through simulation experiments.     

An 8-b slice GaAs bus logic LSI for a high-speed parallelprocessing system

An 8-b slice GaAs bus logic LSI (BL) has been developed for a high-speed interconnection network in a multiple-instruction multiple-data stream (MIMD) parallel processing system. The BL has been designed using a novel standard-cell approach called the building-cell methodology, which leads to a high integrated density of 25000 devices in a 7×7-mm² chip. The BL consists of 3376 logic gates and a 76-b dual-port register file (RF), which has as a new function a multi-address read/write operation for efficient data transfer. The BL was fabricated by a 0.8-μm WN_x gate LDD (lightly doped drain) MESFET process, and fully functionally tested with an average yield of 20%. A 10-ns cycle time operation was achieved with a power dissipation of 5.5 W. This result reveals that a network with 256 GaAs BLs and 64 processor units can realize a maximum data transfer rate of 2.56 Gbyte/s     

Electrical Properties of Isotropic Conductive Adhesives Composed of Silicone-Based Elastomer Binders Containing Ag Particles

The electrical properties of isotropic conductive adhesives (ICAs) with two different types of silicone-based binder containing Ag particles were examined. The ICAs were printed on glass substrates in order to prepare specimens for evaluating the electrical properties. In the case of adhesives containing a denatured silicone binder, both the curing and cooling steps in the isothermal curing process generated electrical conductivity. Adhesives that were cured at 120°C to 200°C exhibited similar values of electrical resistivity regardless of the different curing temperatures. By contrast, electrical conductivity was generated only during the cooling step when adhesives containing a dimethyl methylvinyl siloxane were isothermally cured. In this case, adhesives cured above 160°C exhibited high electrical resistivity. In evaluating the temperature dependence of the electrical resistivity, we found physical annealing to have significantly different effects on these specimens. In addition, we were able to make small sensitive variations in the properties of silicone-based ICAs by controlling the isothermal annealing and thermal cycling processes.     

Low-pass and high-pass filters using coaxial-type dielectric resonators

This paper proposes new low-pass and high-pass filters using coaxial-type dielectric resonators. The low-pass filter has a LC-type circuit structure and is composed of three inductances and two resonance circuits. The resonance circuits are the open-ended coaxial-type dielectric resonators whose length is λg/4. The high-pass filter has a CL-type circuit structure. Two high-pass filters are described, one of them is composed of three capacitances andtwo resonance circuits, the other is composed of five capacitances and four resonance circuits. The operating frequency range of the low-pass filter is 0.13–0.9 GHz and the cutoffency is 900 MHz, and the insertion loss is 0.3 dB. The corresponding quantities of the high-pass filter are 0.9–2.5 GHz, 900 MHz, and 0.3 dB, respectively.     

Phase and magnetic properties of iron oxide clusters in 20CaO·20SiO2·7Fe2O3·6FeO glasses

The annealing of 20CaO·20SiO₂·7Fe₂O₃·6FeO glasses at 973K in vacuo produced clusters of iron oxide, the shape of which was nearly spherical and the diameter distributed in the narrow range 25–115Å. The phase of clusters was identified to be Fe³⁺(Fe³⁺ _{poststagger|1.30}Fe²⁺ _{poststagger|0.55}V_0.15)·O₄ in the inverse spinel structure based upon the Mössbauer spectra and x-ray diffraction profiles. The clusters exhibited superparamagnetism and their effective anisotropy energy constant was inversely proportional to the cluster diameter. The magnetization of the glasses measured by a vibrating sample magnetometer was 7.2 × 10^-6 Wbmkg^-1 at 10 kOe at room temperature and smaller than the value calculated assuming that the whole clusters have superparamagnetism. These results suggest the pinning of spins near the cluster surface.     

Dynamic Power Integrity Control of ATE for Eliminating Overkills and Underkills in Device Testing

This paper proposes a power integrity control technique for dynamically controlling power supply voltage fluctuations for a device under test (DUT), and demonstrates its effectiveness for eliminating the overkills/underkills due to the difference of power supply impedance between an automatic test equipment (ATE) and a practical operating environment of the DUT. The proposed method injects compensation currents into the power supply nodes on the ATE system in a feed-forward manner such that the ATE power supply waveform matches with the one on the customer’s operating environment of the DUT. A method for calculating the compensation current is also described. Experimental results show that the proposed method can emulate the power supply voltage waveform under a customer’s operating condition and eliminate 95 % of overkills/underkills in the maximum operating frequency testing with 105 real silicon devices. Limitations and applications of the proposed method are also discussed.     

A Bit-Error Rate Measurement and Error Analysis of Wireline Data Transmission using Current Source Model for Single Event Effect under Irradiation Environment

A high-speed wireline interfaces, e.g. LVDS (Low Voltage Differential Signaling), are widely used in the aerospace field for powerful computing in artificial satellites and aircraft [19]. This paper describes Bit Error Rate (BER) prediction methodology for wireline data transmission under irradiation environment at the design stage of data transmitter, which is useful in proactively determining if the design circuit meets the BER criteria of the target system. Using a custom-designed LVDS transmitter (TX) to enhance latch-up immunity [42], the relationship between transistor size and BER has been analyzed with focusing on Single Event Effect (SEE) as a cause of the bit error. The measurement was executed under ⁸⁴Kr¹⁷⁺ exposure of 322.0 MeV at various flux condition from 1?×?10³ to 5?×?10⁵ count/cm²/sec using cyclotron facility. For the analysis of the bit error, circuit simulation by SPICE was utilized with expressing the irradiation environment by a current source model. The current source model represents a single event strike into the circuit at drain and substrate junctions in bulk MOSFETs. For the construction of the current source model, a charge collection was simulated at the single particle strike with the creation of 3D Technology CAD (TCAD) models for the MOS devices of bulk transistor process technology. The simulation result of the charge correction was converted to a simple time-domain equation, and the single-event current source model was produced using the equation. The single-event current source was applied to SPICE simulation at bias current related circuits in the LVDS transmitter, then simulation results are carefully verified whether the output data is disturbed enough to cause bit errors on wireline data transmission. By the simulation, sensitive MOSFETs have been specified and a sum of the gate area for these MOSFETs has 29% better correlation than the normal evaluation index (sum of the drain area) by comparison to the actual BER measurement. Through the precise revelation of the sensitive area by SPICE simulation using the current model, it became possible to estimate BER under irradiation environment at the pre-fabrication design stage.

     

Polarization-independent low-crosstalk polymeric AWG-based tunablefilter operating around 1.55 μm

A wavelength tunable optical filter is a beneficial optical component for dense wavelength-division-multiplexed systems. We report a high-performance polymeric arrayed-waveguide grating (AWG)-based tunable filter made of cross-linked silicone and operating around 1.55 μm. This filter exhibited a TE-TM polarization shift of <0.03, a crosstalk of <-35 dB, an insertion loss of <3 dB, and an 8.8-nm tuning range in the 25°C-75°C temperature region     

A new method for treating fluorine wastewater to reduce sludge andrunning costs

Reduction of the sludge generated in fluorine wastewater treatment is a critical problem for the semiconductor industry. We have developed a new method for treating fluorine wastewater in order to reduce sludge and running costs. This method utilizes a small amount of Al(OH)₃ not only as an aggregator for CaF₂ generated from fluoride ions in the wastewater but also as an effective fluorine adsorbent. The Al(OH)₃ as fluorine adsorbent is used repeatedly through an AI(OH)3 reclamation process. This method can effectively treat the concentrated fluorine wastewater to achieve an exceedingly low concentration in one-step treatment. We constructed a practical treatment system using this method by modifying part of an existing conventional system. This new treatment system is able to reduce both the total sludge and running costs to about one-tenth those of a conventional system     

A quantitative evaluation of time-independent and time-dependent deformations of lead-free and lead-containing solder alloys

A method to separate plasticity and creep is discussed for a quantitative evaluation of the plastic, transient creep, and steady-state creep deformations of solder alloys. The method of separation employs an elasto-plastic-creep constitutive model comprised of the sum of the plastic, transient creep, and steady-state creep deformations. The plastic deformation is expressed by the Ramberg-Osgood law, the steady-state creep deformation by Garofalo’s creep law, and the transient creep deformation by a model proposed here. A method to estimate the material constants in the elasto-plastic-creep constitutive model is also proposed. The method of separation of the various deformations is applied to the deformation of the lead-free solder alloy Sn/3Ag/0.5Cu and the lead-containing solder alloy Sn/37Pb to compare the differences in the plastic, transient creep, and steady-state creep deformations. The method of separation provides a powerful tool to select the optimum lead-free solder alloys for solder joints of electronic devices.