Organic–Inorganic Nanohybrids as Novel Thermoelectric Materials: Hybrids of Polyaniline and Bismuth(III) Telluride Nanoparticles

Thermoelectric materials have received much attention recently from the viewpoint of global environmental issues and effective utilization of energy resources. Especially those effective at relatively low temperature, such as below 100°C, which are usually abandoned without use, have become noteworthy recently. From this point of view, organic thermoelectric materials are most attractive, because they could be prepared at low cost and applied in various locations due to their flexibility. We have investigated the thermoelectric properties of organic conducting polymers such as polyaniline, polypyrrole, and polyphenylenevinylene, and succeeded in increasing the thermoelectric performance by selecting dopants, stretching conducting films, etc. Recently we have focused on new systems of organic–inorganic hybrid thermoelectric materials. Herein we present the preparation of a novel system of hybrids of polyaniline and bismuth(III) telluride nanoparticles, starting from bismuth(III) chloride and tetrachlorotellurium by using polyvinylpyrrolidone as a protecting reagent, as well as their thermoelectric properties. The hybrids prepared by this particular method showed much higher thermoelectric performance than the starting organic conducting polymer.     

A multi-port D-R mutator using CCIIs with current followers

A multi-port D-R mutator with new current conveyors (CFCCIIs) as the four-port active element is proposed. Each CFCCII consists of a current follower added to a second-generation current conveyor (CCII). This proposed circuit is a simple configuration using CCIIs, CFCCIIs and grounded capacitances and is applied to higher order high-pass filters. This configuration can realize a superior transmission characteristic, inheriting the characteristic of the conventional LC filter. Since all the passive elements are grounded, the influence of parasitic elements of current conveyors can be reduced with this circuit configuration. As a result, this circuit is considered a suitable configuration for monolithic integration. Results obtained from the SPICE simulations show the realized filters have excellent performance and the circuit is effective.     

Design of low‐power all‐optical networks under the constraint of four‐wave mixing

In this paper, we propose a static lightpath establishment method to design low‐power all‐optical networks under the constraint of four‐wave mixing (FWM). Since the FWM causes nonlinear interchannel crosstalk, it degrades the communication quality of optical signals. The FWM crosstalk effect becomes strong in a fiber as the number of passing optical signals increases. Therefore, we should reduce the number of optical signals passing through the same fiber from the perspective of the FWM. Meanwhile, in order to enhance the power efficiency of optical amplifiers, which are deployed at each optical fiber, it is preferred that multiple optical signals are transmitted in the same fiber. In order to decrease the power consumption while keeping high communication quality, the proposed method statically selects routes, wavelengths, and fibers for each traffic demand, considering the FWM crosstalk effect and the usage efficiency of the optical amplifiers. We show the performance of the proposed method through numerical experiments.     

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearing in one convergent-beam electron diffraction (CBED) pattern. The analysis was performed with three steps. Firstly, the parameters alpha and beta were determined from the deviations of the HOLZ lines from the mirror symmetry perpendicular to the [001] direction. Secondly, the parameter c was determined from the distance between the intersections of the HOLZ lines, which have the same h and k indices but different l indices. Finally, the parameters a, b and gamma were determined simultaneously from several distances between the intersections of the HOLZ lines. The lattice parameters determined for the strained area were a = 0.611(2) nm, b = 0.615(1) nm, c = 0.6119(7) nm, alpha = 89.5(1) degrees, beta = 89.0(2) degrees and gamma = 89.1(2) degrees. This result implies that the cubic lattice of InAs is elongated approximately in the [111] direction and the exact lattice symmetry is triclinic. The same analysis procedure was applied to another two specimen areas. It was found that the areas have orthorhombic distortions with lattice parameters a = 0.607(2) nm, b = 0.604(1) nm and c = 0.6085(7) nm for one area, and with a = 0.607(2) nm, b = 0.605(1) nm and c = 0.6065(7) nm for the other area. It is should be emphasized that the present analysis of lattice distortions is immediately applicable to the other semiconductors, such as Si, SiGe or GaAs layers, without assuming any crystal system.     

Detection of characteristic signals from as-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction

Characteristic signals were detected from As-doped (< 1 at.%) regions of silicon by dark-field transmission electron microscopy and convergent-beam electron diffraction. A slight intensity increase was observed in 220 dark-field images, which may be explained by an increase of scattering amplitude due to the As doping. The doped region showed a much higher intensity in 004 dark-field images. The characteristic high intensity was observed for specimens with As concentrations of about 0.09-0.8 at.%. Convergent-beam electron diffraction patterns obtained from the As-doped region showed a characteristic rocking curve for 004 reflection. These characteristics should originate from incoherent elastically scattered electrons due to a static lattice distortion around the doped As atoms. The observed characteristics in dark-field images and rocking curves of the 004 reflection should be a good probe not only for investigating the concentration of doped atoms in Si lattice, but also for the amount of impurity and/or point defects in other crystalline materials.     

A Bit-Error Rate Measurement and Error Analysis of Wireline Data Transmission using Current Source Model for Single Event Effect under Irradiation Environment

A high-speed wireline interfaces, e.g. LVDS (Low Voltage Differential Signaling), are widely used in the aerospace field for powerful computing in artificial satellites and aircraft [19]. This paper describes Bit Error Rate (BER) prediction methodology for wireline data transmission under irradiation environment at the design stage of data transmitter, which is useful in proactively determining if the design circuit meets the BER criteria of the target system. Using a custom-designed LVDS transmitter (TX) to enhance latch-up immunity [42], the relationship between transistor size and BER has been analyzed with focusing on Single Event Effect (SEE) as a cause of the bit error. The measurement was executed under ⁸⁴Kr¹⁷⁺ exposure of 322.0 MeV at various flux condition from 1?×?10³ to 5?×?10⁵ count/cm²/sec using cyclotron facility. For the analysis of the bit error, circuit simulation by SPICE was utilized with expressing the irradiation environment by a current source model. The current source model represents a single event strike into the circuit at drain and substrate junctions in bulk MOSFETs. For the construction of the current source model, a charge collection was simulated at the single particle strike with the creation of 3D Technology CAD (TCAD) models for the MOS devices of bulk transistor process technology. The simulation result of the charge correction was converted to a simple time-domain equation, and the single-event current source model was produced using the equation. The single-event current source was applied to SPICE simulation at bias current related circuits in the LVDS transmitter, then simulation results are carefully verified whether the output data is disturbed enough to cause bit errors on wireline data transmission. By the simulation, sensitive MOSFETs have been specified and a sum of the gate area for these MOSFETs has 29% better correlation than the normal evaluation index (sum of the drain area) by comparison to the actual BER measurement. Through the precise revelation of the sensitive area by SPICE simulation using the current model, it became possible to estimate BER under irradiation environment at the pre-fabrication design stage.

     

Effect of Raman amplification on stimulated Brillouin scatteringthreshold in dispersion compensating fibres

An investigation of how the stimulated Brillouin scattering threshold of dispersion compensating fibres is affected by Raman amplification is presented. Experimental data is in good agreement with the threshold values predicted by the theoretical approach     

Tailored Remote Photochromic Coloration of in situ Synthesized CdS Quantum Dot Loaded WO3 Films

CdS quantum dot (QD) loaded WO₃ films, fabricated by screen printing and short‐time chemical bath deposition (CBD) techniques, have been proven to have an efficient visible‐light‐driven photochromic response. One of the striking features of such a photochromic system is its remote photochromic characteristic. The photogenerated electrons in CdS are injected into WO₃ to cause the color change of WO₃, while CdS does not show any photochromism. Compared to bare WO₃ films, the spectral sensitivity of remote photochromism in the CdS QD loaded WO₃ films is red‐shifted. The onset wavelength for remote, the decoloration time for CdS QD loaded WO₃ films was found to be significantly shorter than that for bare WO₃ films, probably due to their different electron trapping processes. Bandgap excitation in bare WO₃ creates deeply trapped electrons in the bulk, whereas the electrons injected from the QDs are trapped at shallow surface states in the remote photochromic system. The successful tailoring of photochromic coloration employing a simple procedure would provide numerous opportunities for designing photo‐ and electrochromic materials with the optimal architecture and tunable properties.