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31.
A compact, high-resolution analog-to-digital converter (ADC) especially for sensors is presented. The basic structure is a completely digital circuit including a ring-delay-line with delay units (DUs), along with a frequency counter, latch, and encoder. The operating principles are: (1) the delay time of the DU is modulated by the analog-to-digital (A/D) conversion voltage and (2) the delay pulse passes through a number of DUs within a sampling (= integration) time and the number of DUs through which the delay pulse passes is output as conversion data. Compact size and high resolution were realized with an ADC having a circuit area of 0.45 mm/sup 2/ (0.8-/spl mu/m CMOS) and a resolution of 12 /spl mu/V (10 kS/s). Its nonlinearity is /spl plusmn/0.1% FS per 200-mV span (1.8-2.0 V), for 14-b resolution. Sample holds are unnecessary and a low-pass filter function removes high-frequency noise simultaneously with A/D conversion. Thus, the combination of this ADC and a digital filter that follows can eliminate an analog prefilter to prevent the aliasing before A/D conversion. Also, both this ADC can be shrunk and operated at low voltages, so it is an ideal means to lower the cost and power consumption. Drift errors can be easily compensated for by digital processing.  相似文献   
32.
The specific absorption rates (SAR) determined computationally in the specific anthropomorphic mannequin (SAM) and anatomically correct models of the human head when exposed to a mobile phone model are compared as part of a study organized by IEEE Standards Coordinating Committee 34, Sub-Committee 2, and Working Group 2, and carried out by an international task force comprising 14 government, academic, and industrial research institutions. The detailed study protocol defined the computational head and mobile phone models. The participants used different finite-difference time-domain software and independently positioned the mobile phone and head models in accordance with the protocol. The results show that when the pinna SAR is calculated separately from the head SAR, SAM produced a higher SAR in the head than the anatomically correct head models. Also the larger (adult) head produced a statistically significant higher peak SAR for both the 1- and 10-g averages than did the smaller (child) head for all conditions of frequency and position.  相似文献   
33.
A small-signal analysis of direct modulation of laser diodes is presented. The analysis is valid over a wide frequency range, up to the frequency corresponding to the round trip time of the active region. This theory is best for laser diodes with small active regions but with large and complicated optical cavities. Optical resonances may occur in this range, resulting in a large response to direct modulation as a result of interaction of the lasing mode with the optical resonance. This theory can predict the linear response of the laser to direct modulation throughout this frequency range. It also predicts the lower frequency relaxation oscillation effect, thus unifying these different effects with a single treatment. The form of the modulation response is found to be the same as the standard relaxation oscillation formula, modified by a factor the form of which depends on the optics of the laser cavity alone  相似文献   
34.
Cross-coupled-mode operation in a twin-stripe laser is analyzed with particular concern for interstripe gain. When the interstripe gain of a twin-stripe laser is high, cross-coupled-mode operation is obtained with a cavity longer than the coupling length of the twin-stripe waveguide. The far-field pattern is single peaked and deflected to the low carrier density side. These characteristics are in contrast to those of the previous model without interstripe gain  相似文献   
35.
The fenestrated endotheliocyte of peritubular and glomerular capillaries in rat and mouse kidneys were observed with SEM and TEM. In the glomerular capillary, so-called "pored-domes" were found not only at the fenestrated areolae but also at the nuclear region of the endotheliocyte. At the region between filtration surface and nuclear region, they accumulated to construct a sponge-like structure. The endotheliocyte of peritubular capillary also showed small "pored-domes". The size and morphology of the pores in the "pored-domes" of glomerular and peritubular capillaries were similar to those of areolae fenestratae of the respective capillary. Based on the findings, we assumed that pored-domes and the sponge-like structure are the reservoir for the fenestrated area of the endotheliocyte to accommodate the rapid expansion of capillary lumen.  相似文献   
36.
A BiCMOS logic circuit applicable to sub-2-V digital circuits has been developed. A transiently saturated full-swing BiCMOS (TS-FS-BiCMOS) logic circuit operates twice as fast as CMOS at 1.5-V supply. A newly developed transient-saturation technique, with which bipolar transistors saturate only during switching periods, is the key to sub-2-V operation because a high-speed full-swing operation is achieved to remove the voltage loss due to the base-emitter turn-on voltage. Both small load dependence and small fan-in dependence of gate delay time are attained with this technique. A two-input gate fabricated with 0.3-μm BiCMOS technology verifies the performance advantage of TS-FS-BiCMOS over other BiCMOS circuits and CMOS at sub 2-V supply  相似文献   
37.
BiCMOS standard cell macros, including a 0.5-W 3-ns register file, a 0.6-W 5-ns 32-kbyte cache, a 0.2-W 3-ns table look-aside buffer (TLB), and a 0.1-W 3-ns adder, are designed with a 0.5-μm BiCMOS technology. A supply voltage of 3.3 V is used to achieve low power consumption. Several BiCMOS/CMOS circuits, such as a self-aligned threshold inverter (SATI) sense amplifier and an ECL HIT logic are used to realize high-speed operation at the low supply voltage. The performance of the BiCMOS macros is verified using a fabricated test chip  相似文献   
38.
A high-performance and high-reliability magnetically levitated (MAGLEV) superconducting magnet (SCM) was developed. Its heat generation per unit time by the electromagnetic forces due to the spatially fifth ripple magnetic fields from levitation coils is under 2 W at the frequency range in which vehicles are levitated. The vibration mode of inner vessels that makes the largest contribution to heat generation in SCMs is clarified, the torsion mode. A modeling method to analyze SCM vibration, which considers the effect of the bogie frames of a vehicle, is examined, and heat generation in SCMs is calculated from the vibration of the inner vessel. Using the numerical analysis method, new SCMs combined with new bogie frames for the Yamanashi Test Line are designed. Good performance in vibration and heat generation of these SCMs is predicted by numerical analysis  相似文献   
39.
For compact and high-sensitivity 10 Gb/s optical receiver applications, we have developed low-dark-current planar-structure InAlGaAs-InAlAs superlattice avalanche photodiodes with a Ti-implanted guard-ring. The APDs exhibited dark current as low as 0.36 μA at a gain of 10. The temperature dependence of the dark current was confirmed to be in a sufficient level for practical 10-Gb/s applications. The APDs also exhibited a quantum efficiency of 67%, a gain-bandwidth-product of 110 GHz, a top 3-dB bandwidth of 15.2 GHz, and a minimum gain for 10-GHz bandwidth of 1.6. Preliminary aging test also showed a stable dark current operation after aging of over 2200 h at 200°C. These high-reliability, low-dark-current, high-speed, and wide-dynamic-range characteristics are promising for 10-Gb/s high-sensitivity optical receiver use  相似文献   
40.
The ability to grow high quality (InGa)As on the (111)A surface is essential for the production of a wide range of optoelectronic devices, but the topic has so far received little attention. What work there has been shows it to be highly problematic, reflected in the very broad photoluminescence (PL) peaks observed for GaAs:(InGa)As multiple quantum well structures. The origin of this broadening is unclear but is certainly related to the difficulty in choosing appropriate conditions for the growth of III-Vs on the (111)A surface. We have undertaken a study of the growth of (InGa)As on the GaAs(111)A, (211)A and (311)A surfaces with the goal of achieving high quality quantum well structures, the test being the ability to obtain narrow PL line widths. We have demonstrated that 80 Å 15% InGaAs(111)A single quantum wells with 12K PL peak widths of less than 8 meV can be obtained by growth at 400°C under a V:III ratio of 5:1.  相似文献   
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