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991.
The robust tracking of abrupt motion is a challenging task in computer vision due to its large motion uncertainty. While various particle filters and conventional Markov-chain Monte Carlo (MCMC) methods have been proposed for visual tracking, these methods often suffer from the well-known local-trap problem or from poor convergence rate. In this paper, we propose a novel sampling-based tracking scheme for the abrupt motion problem in the Bayesian filtering framework. To effectively handle the local-trap problem, we first introduce the stochastic approximation Monte Carlo (SAMC) sampling method into the Bayesian filter tracking framework, in which the filtering distribution is adaptively estimated as the sampling proceeds, and thus, a good approximation to the target distribution is achieved. In addition, we propose a new MCMC sampler with intensive adaptation to further improve the sampling efficiency, which combines a density-grid-based predictive model with the SAMC sampling, to give a proposal adaptation scheme. The proposed method is effective and computationally efficient in addressing the abrupt motion problem. We compare our approach with several alternative tracking algorithms, and extensive experimental results are presented to demonstrate the effectiveness and the efficiency of the proposed method in dealing with various types of abrupt motions. 相似文献
992.
微型通用串行总线(Micro-USB)作为PC机及各类数码产品的主流接口,因其具有携带方便、传输速度快、易于扩展、总线供电等优点,尤其是其特殊的传输线模型,使其在通用计算机、嵌入式系统为主要应用领域的各种数字系统和设备中得到了广泛的应用,并获得制造商及用户的高度认可,具有广阔的发展前景. 相似文献
993.
994.
Nonpolar a-plane [110] GaN has been grown on r-plane [1■02] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to the c-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used for a-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved. 相似文献
995.
Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties. 相似文献
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999.
Jianguo Zhang Stahl J.N. Huang H.K. Xiaoqiang Zhou Lou S.L. Song K.S. 《IEEE transactions on information technology in biomedicine》2000,4(2):178-185
Real-time consultation between referring physicians or radiologists with an expert is critical for timely and adequate management of problem cases. During consultation, both sides need to: 1) synchronously manipulate high-resolution digital radiographic images or large volume MR/CT images; 2) perform interpretation interactively; and 3) converse with audio. We present a specifically designed teleconsultation system in a digital imaging and communication in medicine picture archiving and communication systems (PACS) clinical environment. The system uses bidirectional remote control technology to meet critical teleconsultation application requirements with high-resolution and large-volume medical images operated in a limited bandwidth network setting. We give the system design and implementation methods, and also describe the teleconsultation procedure and protocol used in this system. Finally, laboratory and clinical evaluation results are discussed 相似文献
1000.
Low-temperature sensitive, compressively strained InGaAsP active(λ=0.78-0.85 μm) region diode lasers
This letter reports comparative studies between (Al)GaAs versus InGaAsP active region edge-emitting semiconductor lasers for emission wavelength in the IR regime (λ=0.78-0.85 μm). High characteristic temperature T0(200 K) and T1 (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (Δa/a=0,6%) Al-free (InGaAsP) active region with an emission wavelength of 0.85 μm. The high T0 and T 1 a result of low active-layer carrier leakage, will be beneficial for high-temperature and high-power operation. Implementation for InGaAsP-active VCSEL's with compressively strained InGaAsP-active layers and conventional DBR's is also discussed 相似文献