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A novel low distortion CMOS linearized transconductor circuit is developed for analogue signal processing. The circuit gives a very low distortion level and a wide linearity range when compared with other reported topologies. Simulation results based on using the 0.5 µm CMOS process show that this approach gives an exceptional linearity and an excellent performance. 相似文献
43.
This article presents a compact microstrip dual-band bandstop filter (BSF), in which one λg/4 defected ground structure (DGS) pair is utilised to realise one stopband while two stepped impedance resonators (SIRs) help obtain another stopband and suppress the spurious harmonics. The design strategies and the equivalent circuits are introduced in detail. The measured results indicate 43.8% and 18.7% fractional bandwidth in the two stopbands (2.4 GHZ and 5.2 GHz) respectively, and the return loss is greater than 15 dB in the whole passband. In addition, size reduction can be conveniently achieved by adjusting the length of the SIRs and DGS. 相似文献
44.
Jain P.K. Espinoza J.R. Ismail N.A. 《Industrial Electronics, IEEE Transactions on》1999,46(2):261-270
A single-stage power-factor-corrected pulsewidth modulation power converter with extended load power range is presented. The topology is based on a zero-voltage zero-current-switched full-bridge (ZVZCS-FB) inverter. Steady-state analysis of the topology shows that by operating the LC load filter in discontinuous mode, the DC-link voltage remains bounded and independent of the load level. Therefore, the load power range can be further expanded, including the no-load operating condition. The analysis also shows that the extension of the load power range is achieved without any penalty in: (1) the input power factor (due to the input current waveshaping feature); (2) the power converter efficiency (due to ZVZCS and the single-stage features); and (3) the load voltage quality (due to the high bandwidth of the phase control loop). Simulated and experimental results are included to show the feasibility of the proposed scheme 相似文献
45.
PLZT电光陶瓷具有良好的透明性、高电光系数等特性,用来实现全光纤调Q开关具有很大的优势.分析了PLZT全光纤调Q开关的原理,测量了调Q开关的时间波形,研究了基于PLZT开关的全光纤单模环形调Q掺Yb3 光纤激光器.抽运光功率为180 mW,莆复频率为1 kHz时,得到峰值功率25.6 W,脉冲宽度80 ns,光谱宽度1 nm,脉冲能量2.0 μJ的调Q脉冲.此外,分别研究了抽运功率和重复频率对脉冲峰值功率和脉冲宽度的影响,结果表明,同一重复频率情形下,随着抽运功率的升高,峰值功率增大,脉冲宽度降低;同一抽运功率水平下,随着重复频率的增大,脉冲的峰值功率减小,脉冲宽度增大. 相似文献
46.
47.
Due to their advantages, facial recognition systems are among the most widely used biometric systems in recent years. However, their drawback is that they can easily be deceived by using 3D masks, which are replicas of real faces. To confirm this fact, we have tested the vulnerability to 3D masks attacks of the already approved Legendre moments invariants (LMI)-based face recognition method. This has been achieved by using the 3D mask attack database (3DMAD), which consists of real faces and faces with 3D masks. The obtained spoof false acceptance rate (SFAR) was close to 65%, which proves that this recognition system is vulnerable to 3D masks attacks. This is generally the case of other face recognition systems, with no anti-spoofing provision. In this paper, a face recognition method is proposed to prevent hackers from deceiving face recognition systems by using 3D masks of people belonging to the system database. This method combines the LMI and the linear discriminant analysis for characteristic features extraction, and the maximum likelihood for classification. With a 97.6% recognition rate and a SFAR equal to 0.83%, the results obtained may be considered as very satisfactory. These results, while obtained with a lower computational time, compare favorably with those of the state-of-the-art method that uses the same 3DMAD database. 相似文献
48.
本文主要介绍一套适合海油企业实际业务应用的应急管理信息系统,系统通过模块化、组件化模式实现灵活应用配置,并可根据用户实际应用需求进行模块组合、拆解,为不同领域的企业和厂区搭建适用的定制化应用系统,满足企业日常安全应急管理需求,为应急指挥工作提供辅助决策支持。 相似文献
49.
50.
Liting Yang Xiao Li Ke Pei Wenbin You Xianhu Liu Hui Xia Yonggang Wang Renchao Che 《Advanced functional materials》2021,31(35):2103971
Large interfacial resistance plays a dominant role in the performance of all-solid-state lithium-ion batteries. However, the mechanism of interfacial resistance has been under debate. Here, the Li+ transport at the interfacial region is investigated to reveal the origin of the high Li+ transfer impedance in a LiCoO2(LCO)/LiPON/Pt all-solid-state battery. Both an unexpected nanocrystalline layer and a structurally disordered transition layer are discovered to be inherent to the LCO/LiPON interface. Under electrochemical conditions, the nanocrystalline layer with insufficient electrochemical stability leads to the introduction of voids during electrochemical cycles, which is the origin of the high Li+ transfer impedance at solid electrolyte-electrode interfaces. In addition, at relatively low temperatures, the oxygen vacancies migration in the transition layer results in the formation of Co3O4 nanocrystalline layer with nanovoids, which contributes to the high Li+ transfer impedance. This work sheds light on the mechanism for the high interfacial resistance and promotes overcoming the interfacial issues in all-solid-state batteries. 相似文献