Calculation of the molar volume of liquid hydrocarbons

Equations are proposed for calculating the molar volume of liquid hydrocarbons used in production of surfactants. With such data, it will be possible to calculate most of the physicochemical properties of these hydrocarbons to solve many process problems. __________ Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 6, pp. 39–41, Novemmber–December, 2006.     

Production of hydrogen over bimetallic Pt–Ni/δ-Al2O3: I. Indirect partial oxidation of propane

Indirect partial oxidation (IPOX) of propane was studied over bimetallic 0.2 wt.% Pt–15 wt.% Ni/δ-Al₂O₃ catalyst in the 623–743 K temperature range. The unreduced and reduced forms of the catalyst were characterized by ESEM–EDAX and X-ray diffraction (XRD). In the IPOX tests, the effects of steam to carbon ratio (S/C), carbon to oxygen ratio (C/O₂) and residence time (W/F (g_cat h/mol HC)) on the hydrogen production activity, selectivity and product distribution were studied in detail. The effect of temperature program applied (increasing from 623 to 743 K, ITP; decreasing from 743 to 623 K, DTP) during reaction was also tested. The results showed that the Pt–Ni bimetallic system has superior performance characteristics compared to the monometallic catalysts reported in literature. The reason is thought to be the utilization of the catalyst particles as micro heat exchangers during IPOX; the heat generated by Pt sites during exothermic total oxidation (TOX) being readily transferred through the catalyst particles acting as micro heat exchangers to the Ni sites, which promote endothermic steam reforming (SR). The optimal conditions were found as S/C = 3, C/O₂ = 2.70 and W/F = 0.51 g_cat h/mol HC for IPOX of propane on the basis of high hydrogen productivity and selectivity between 623 and 748 K for the experimental conditions tested. The thermo-neutral points obtained showed the sustainability of reaction in terms of energy.     

Crystallization study of chemically vapour-deposited amorphous silicon films by in situ x-ray diffraction

The solid phase crystallization kinetics of chemically vapour-deposited amorphous silicon films were studied by in situ X-ray diffraction. We determined the crystalline volume directly from the Bragg peak intensities at various times during isothermal annealing in the temperature range 578 °C < T < 658 °C. From these experiments we deduced that the crystallization was due to nucleation predominantly at the substrate-film interface followed by crystal growth perpendicular to this interface. The crystal growth rate was thermally activated with an activation energy E_v of 3.1 eV. A strong 〈111〉 preferred orientation of the growing polycrystal was observed and the grain size remained constant at about 60 nm. Evidence of stresses at the amorphous-crystalline interface during the early stages of crystallization was observed. A comparison with previous conductivity measurements is also carried out.     

Developing and fully developed turbulent flow of drag reducing fluids in an annular duct

Velocity profiles for the inner and outer flow regions of annuli are proposed for the turbulent flow of drag reducing fluids. Theoretical expressions for friction factors are developed. From the shear stress equations and the velocity profiles, estimates for the entrance lengths are given.