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91.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
92.
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.  相似文献   
93.
Tensile experiments have been performed on specimens of four different investment-cast TiAl-based alloys with variations in casting conditions. The average ductilities obtained in these experiments vary between approximately 0.8 to 2.0 pct plastic strain to failure in tension. By using the three-parameter form of the Weibull relation, with the 0.2 pct offset yield strength as the minimum failure strength, the resulting variability in the data can be quantified and is found to be similar for those alloys with similar microstructural scale (grain size). Large variations in lamellar volume fraction, segregation, and phase distribution have a minor influence on property variability, compared to changes in the scale of the grain structure caused by either variations in cooling rate during casting or the addition of grain refiners.  相似文献   
94.
Single crystals of Ti-Al alloys containing 1.4, 2.9, 5, and 6.6 pct Al (by weight) were oriented for 〈a〉 slip on either basal or prism planes or loaded parallel along the c-axis to enforce a nonbasal deformation mode. Most of the tests were conducted in compression and at temperatures between 77 and 1000 K. Trace analysis of prepolished surfaces enabled identification of the twin or slip systems primarily responsible for deformation. Increasing the deformation temperature, Al content, or both, acted to inhibit secondary twin and slip systems, thereby increasing the tendency toward strain accommodation by a single slip system having the highest resolved stress. In the crystals oriented for basal slip, transitions from twinning to multiple slip and, finally, to basal slip occurred with increasing temperature in the lower-Al-content alloys, whereas for Ti-6.6 pct Al, only basal slip was observed at all temperatures tested. A comparison of the critically resolved shear stress (CRSS) values for basal and prism slip as a function of Al content shows that prism slip is favored at room temperature in pure Ti, but the stress to activate these two systems becomes essentially equal in the Ti-6.6 pct Al crystals over a wide range of temperatures. Compression tests on crystals oriented so that the load was applied parallel to the c-axis showed extensive twinning in lower Al concentrations and 〈c+a〉 slip at higher Al concentrations, with a mixture of 〈c+a〉 slip and twinning at intermediate compositions. A few tests also were conducted in tension, with the load applied parallel to the c-axis. In these cases, twinning was observed, and the resolved shear for plastic deformation by twinning was much lower that that for 〈c+a〉 slip observed in compression loading. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science and Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.  相似文献   
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S N Maitra 《Sadhana》1985,8(4):373-385
The burn time and burnout velocity of a multistage rocket flown vertically in vacuum with constant thrust tangential to the flight path and a prescribed initial/final thrust-to-weight ratio in an arbitrary stage have been determined. The present paper also deals with optimal staging under given conditions of flight.  相似文献   
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99.
Existing duality principles in structural optimisation are briefly reviewed and then they are extended to structures with segment-wise constant cross-sections. All theories are discussed in the particular context of optimal plastic beam design with symmetric convex specific cost functions and are confirmed by independent calculations on illustrative examples. It is shown that the optimal solution is always associated with a displacement field in which the mean absolute curvature value for each segment equals the subgradient of the specific cost function, with respect to the maximum absolute moment value for that segment. Moreover, the dual problem consists of the maximisation of the difference of two terms: the first one is the integral of the product of load and deflection (external work), and the second is the sum of products of segment lengths and the mean complementary cost values (taken with respect to the mean absolute curvature for that segment). Finally, some tentative proposals for a class of non-convex optimisation problems are presented. For special cases, the proposed general statements reduce to theorems by Heyman, Foulkes and Hemp.  相似文献   
100.
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