Characteristic Features of the Optimal Processing of the Results of Measurements in the Case of a Random Observation Function

An analysis is made of the characteristic features and problems of the optimal processing of the results of measurements in the case of a random observation function utilizing a nonlinear Kalman filter. A method is proposed for increasing the convergence domain of the filter with additional processing of measurements in the frequency domain.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

On the physical and logical topology design of large-scale optical networks

We consider the problem of designing a network of optical cross-connects (OXCs) to provide end-to-end lightpath services to large numbers of label switched routers (LSRs). We present a set of heuristic algorithms to address the combined problem of physical topology design (i.e., determine the number of OXCs required and the fiber links among them) and logical topology design (i.e., determine the routing and wavelength assignment for the lightpaths among the LSRs). Unlike previous studies which were limited to small topologies with a handful of nodes and a few tens of lightpaths, we have applied our algorithms to networks with hundreds or thousands of LSRs and with a number of lightpaths that is an order of magnitude larger than the number of LSRs. In order to characterize the performance of our algorithms, we have developed lower bounds which can be computed efficiently. We present numerical results for up to 1000 LSRs and for a wide range of system parameters such as the number of wavelengths per fiber, the number of transceivers per LSR, and the number of ports per OXC. The results indicate that it is possible to build large-scale optical networks with rich connectivity in a cost-effective manner, using relatively few but properly dimensioned OXCs.     

High-gain hybrid amplifier consisting of cascaded fluoride-based TDFA and silica-based EDFA in 1458-1540 nm wavelength region

A hybrid optical fibre amplifier is described that consists of a fluoride-based thulium-doped fibre amplifier and a silica-based erbium-doped fibre amplifier connected in a cascade. The amplifier has a gain of more than 25 dB and a noise figure of less than 9 dB over a wide wavelength region of 1458-1540 nm.     

Static energy reduction techniques for microprocessor caches

Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of static energy consumption due to subthreshold leakage current in cache memory arrays. This paper compares three techniques for reducing static energy consumption in on-chip level-1 and level-2 caches. One technique employs low-leakage transistors in the memory cell. Another technique, power supply switching, can be used to turn off memory cells and discard their contents. A third alternative is dynamic threshold modulation, which places memory cells in a standby state that preserves cell contents. In our experiments, we explore the energy and performance tradeoffs of these techniques. We also investigate the sensitivity of microprocessor performance and energy consumption to additional cache latency caused by leakage-reduction techniques.     

An improved statistical analysis of the least mean fourth (LMF) adaptive algorithm

The paper presents an improved statistical analysis of the least mean fourth (LMF) adaptive algorithm behavior for a stationary Gaussian input. The analysis improves previous results in that higher order moments of the weight error vector are not neglected and that it is not restricted to a specific noise distribution. The analysis is based on the independence theory and assumes reasonably slow learning and a large number of adaptive filter coefficients. A new analytical model is derived, which is able to predict the algorithm behavior accurately, both during transient and in steady-state, for small step sizes and long impulse responses. The new model is valid for any zero-mean symmetric noise density function and for any signal-to-noise ratio (SNR). Computer simulations illustrate the accuracy of the new model in predicting the algorithm behavior in several different situations.     

The radiation of a rectangular power-bus structure at multiple cavity-mode resonances

The radiation from power-bus structures on high-speed printed circuit boards due to the switching noise current of digital integrated circuits is investigated. The study is based on an analytical cavity-resonator model for a rectangular parallel-plate structure. Based on the application of the field-equivalence principle, the radiated field is calculated from the electric edge-field distribution. For typical board dimensions, several cavity-mode resonances occur within the typical frequency range of interest, leading to relatively high maximum values for radiated emission. The evaluation of the radiation patterns reveals that all (0, nth) resonances have equal maximum amplitudes in the whole mode spectrum. This allows the setting up of an engineering equation for quantifying the noise-current-related maximum radiated field strength, including the dielectric and ohmic loss. Among all geometrical and material parameters, the dielectric thickness is one of the most effective ones to control radiated emission. The theoretical results are well confirmed by accurate measurements carried out in an anechoic room.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.