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11.
In this paper, we report on the main aspects of the design, fabrication, and performance of a microelectromechanical system constituted by a mechanical submicrometer scale resonator (cantilever) and the readout circuitry used for monitoring its oscillation through the detection of the capacitive current. The CMOS circuitry is monolithically integrated with the mechanical resonator by a technology that allows the combination of standard CMOS processes and novel nanofabrication methods. The integrated system constitutes an example of a submicroelectromechanical system to be used as a cantilever-based mass sensor with both a high sensitivity and a high spatial resolution (on the order of 10/sup -18/ g and 300 nm, respectively). Experimental results on the electrical characterization of the resonance curve of the cantilever through the integrated CMOS readout circuit are shown.  相似文献   
12.
The occurrence of a vascular tumour at the intraparenchymatous testicular level is a fact little reported in the literature. Searching for such events, 19 cases were found all of which showed benign clinical behaviour. The most commonly seen histological pattern is cavernous haemangioma (11 patients). Mean age at presentation is 19 years old and the most usual pre-operative diagnosis, germinal cell neoplasia. Since there are no specific ultrasound patterns that may allow to differentiate benign from malignant masses, inguinal orchiectomy is the choice treatment in this type of lesions. Furthermore, the case of a 44-year old patient with hypoechogenic solid mass in left testis who consulted for sporadic episodes of long-standing scrotal pain is presented. After radical exeresis of the gonad, the histological analysis showed existence of testicular cavernous haemangioma.  相似文献   
13.
Metallurgical and Materials Transactions A - This work has focused on the study of hot working behavior of boron high strength steels microalloyed with different combinations of Nb and/or Mo. The...  相似文献   
14.
The goal of this work was to identify the inclusions in lamellar graphite cast iron in an effort to explain the nucleation of the phases of interest. Four samples of approximately the same carbon equivalent but different levels of sulfur and titanium were studied. The Ti/S ratios were from 0.15 to 29.2 and the Mn/S ratios from 4.2 to 48.3. Light and electron microscopy were used to examine the unetched, color-etched, and deep-etched samples. It was confirmed that in irons with high sulfur content (0.12 wt pct) nucleation of type-A and type-D graphite occurs on Mn sulfides that have a core of complex Al, Ca, Mg oxide. An increased titanium level of 0.35 pct produced superfine interdendritic graphite (~10 μm) at low (0.012 wt pct) as well as at high-S contents. Ti also caused increased segregation in the microstructure of the analyzed irons and larger eutectic grains (cells). TiC did not appear to be a nucleation site for the primary austenite as it was found mostly at the periphery of the secondary arms of the austenite, in the last region to solidify. The effect of titanium in refining the graphite and increasing the austenite fraction can be explained through the widening of the liquidus-eutectic temperature interval (more time for austenite growth) and the decrease in the growth rate of the graphite because of Ti absorption on the graphite. The fact that Ti addition produced larger eutectic cells supports the theory that Ti is not producing finer graphite because of a change in the nucleation potential, but because of lower growth rate of the graphite in between the dendrite arms of a larger fraction of austenite. In the presence of high-Ti and S, (MnTi)S star-like and rib-like inclusions precipitate and act as nuclei for the austenite.  相似文献   
15.
The design of a CMOS clamped‐clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48 × 108 resonant frequency‐quality factor product (Q×fres) in air conditions, which is quite competitive in comparison with existing CMOS‐MEMS resonators.  相似文献   
16.
A bridge-shaped first-lateral-mode 60-MHz mechanical resonator, which is monolithically integrated with capacitive CMOS readout electronics, is presented. The resonator is fabricated directly on a commercial CMOS technology using the top metal level as a structural layer. A maskless single-step wet-etching process for mechanical structure release after the standard CMOS integration process is the only postfabrication requirement. Electrical characterization of the electromechanical device demonstrates the feasibility of implementing a CMOS-microelectromechanical system for high-frequency applications using a standard conventional CMOS technology.  相似文献   
17.
The present paper is the final part of a two-part paper where the influence of coiling temperature on the final microstructure and mechanical properties of Nb-Mo microalloyed steels is described. More specifically, this second paper deals with the different mechanisms affecting impact toughness. A detailed microstructural characterization and the relations linking the microstructural parameters and the tensile properties have already been discussed in Part I. Using these results as a starting point, the present work takes a step forward and develops a methodology for consistently incorporating the effect of the microstructural heterogeneity into the existing relations that link the Charpy impact toughness to the microstructure. In conventional heat treatments or rolling schedules, the microstructure can be properly described by its mean attributes, and the ductile–brittle transition temperatures measured by Charpy tests can be properly predicted. However, when different microalloying elements are added and multiphase microstructures are formed, the influences of microstructural heterogeneity and secondary hard phases have to be included in a modified equation in order to accurately predict the DB transition temperature in Nb and Nb-Mo microalloyed steels.  相似文献   
18.
Buflomedil (CAS 55837-25-7, Fonzylane) is a peripherally vasoactive drug which improves nutritional blood flow in ischaemic tissue of patients with peripheral vascular disease by the way of an increase of perfusion in the microcirculation. Ten hemodialysed patients with chronic renal failure treated with intravenous infusion of 400 mg of buflomedil during 4 h of dialysis were included in the first study. This study was carried out to determine the dialysis plasma clearance and the amount of drug dialysed during the first intravenous administration of buflomedil. The dialysis clearance calculated from the amount recovered in dialysate was (mean +/- SD) 25.4 +/- 25.6 ml/min. The drug recovery resulting from hemodialysis represented a small fraction of the dose (< or = 5%). A second study was carried out to determine the accumulation of buflomedil in chronic hemodialysed patient. The drug concentration were measured before and at the end (4 h) of the infusion of buflomedil in six other patients maintained on intermittent hemodialysis (3 per week) for 4 weeks. The average Cmin and Cmax were stable during the 12 successive dialyses (mean +/- SD intervals were between 0.36 +/- 0.53 and 0.66 +/- 0.79 microgram/ml for Cmin and between 5.15 +/- 2.19 and 7.37 +/- 1.76 micrograms/ml for Cmax), showing no trend of accumulation of buflomedil. These results agree with the pharmacokinetics of the drug which is mainly metabolised in the liver and has a low renal clearance. Dialysis is unable to modify significantly the plasma concentration of the drug in regularly dialysed patients.  相似文献   
19.
20.
The development of a novel fully integrated microelectromechanical system (MEMS) for RF purposes is presented. It is composed of a paddle polysilicon micro-resonator electrostatically excited and a capacitive CMOS read-out amplifier. The micro-resonator is fabricated directly on a commercial CMOS technology, only requiring a wet etching process for the release of the resonant structure after the full CMOS integration. Electrical characterisation of the on-chip resonant device has been performed showing a resonance frequency near 100 MHz.  相似文献   
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