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131.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献
132.
The implementation of time-domain diakoptics in the FDTD method 总被引:1,自引:0,他引:1
The time-domain diakoptics is implemented in the finite-difference time-domain (FDTD) method with two types of connecting interfaces: i) directional interface (TLM-type), and ii) total-field interface (FDTD-type). The FDTD-type interface provides a more efficient way to realize time-domain diakoptics than TLM, especially for device optimization problems. To emulate the TLM-type interface in FDTD, two novel algorithms are developed in this paper. One is to implement an ultra-wideband absorbing boundary on the excitation plane during excitation. The other is to separate directional waves without the knowledge of incident waves. For a large circuit with cascaded modules, sequential and parallel algorithms are provided to connect them. With these connecting algorithms, time-domain diakoptics is one candidate method to realize modular and parallel computation in FDTD simulations. The validity of these algorithms is confirmed by comparison with simulated results from Microwave SPICE 相似文献
133.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
134.
135.
The polarization-dependent absorption and emission spectra of the 4I13/2-4I15/2 transition (λ~1.5 μm) in single crystal bulk Er:LiNbO3 have been measured. Low-temperature (10 K) measurements of the Stark split energy levels of these two manifolds indicate at least two Er3+ sites. McCumber theory is applied to determine the Er:LiNbO3 absorption and emission cross sections. These values are used to calculate the gain characteristics of Er:LiNbO3 channel waveguides. Calculations indicate that a gain of 10 dB is achievable in a waveguide of several centimeters using ~20-mW pump power 相似文献
136.
137.
我国压铸行业及压铸机制造业的情况介绍 总被引:3,自引:0,他引:3
黄久晖 《中国铸造装备与技术》2006,(2):8-9
压力铸造(简称压铸)是金属成型技术中的一种。由于压铸生产技术的生产效率高、产品质量好、经济效益好,因此,用压铸方法生产出的零件(即压铸件)得到广泛的应用,遍及各个工业领域。其中,汽车和摩托车等交通工具作为支柱产业成为压铸零件的最大用户。航空、航天、兵器、电子等工业都是压铸零件的重要用户;还有五金、灯具、玩具、家电、电动及风动工具等行业也都大量地加以采用。 相似文献
138.
Jone W.-B. Der-Chen Huang Das S.R. 《IEEE transactions on instrumentation and measurement》2003,52(5):1381-1390
In this work, a built-in self-testing (BIST) method is proposed to detect nontraditional faults of embedded memory arrays for a system-on-chip (SoC) design. The nontraditional faults include single-cell read-sensitive faults and read coupling faults. The BIST method can efficiently deal with embedded memory arrays spatially distributed on the entire SoC chip. The concept of redundant read-write operations is applied to detect all embedded memory arrays with different sizes simultaneously. The redundant operations do not affect the fault coverage of all nontraditional faults discussed in this paper. The method has the advantages of low hardware overhead, short test time, and high fault coverage for nontraditional memory defects. 相似文献
139.
Shams-Zadeh-Amiri A.M. Xun Li Wei-Ping Huang 《Quantum Electronics, IEEE Journal of》2003,39(9):1086-1098
Radiation patterns of scattered fields with arbitrary azimuthal orders in multilayer planar waveguides and laser cavities with circularly symmetric gratings are formulated based on the volume current method. Full-wave Green's function analysis based on the integral transform method lies at the heart of this approach. Unlike the conventional approach, the dyadic Green's function relates some auxiliary fields to some auxiliary sources in the spectral domain. These auxiliary functions are defined to facilitate the spectral domain formulation in the cylindrical coordinate system and the use of transfer matrix method for obtaining a closed-form solution of the spectral Green's function in multilayer planar structures. More importantly, it is shown that the far-field pattern of the scattered field can be expressed directly in terms of the auxiliary fields in the Hankel transform domain. 相似文献
140.
通过四川双流某公司科研办公大楼采用高压旋喷注浆法复合地基的工程实例,介绍了高压旋喷注浆法在高层建筑地基处理工程中的成功应用,简述了高压旋喷注浆法的工作机理、设计计算、施工过程和检测结果。针对工程地质情况复杂,持力层埋置较深,场地有无规律的软弱下卧层,地基承载力要求又高的高层建筑,提出一种确实可行的地基处理方法——高压旋喷注浆法。 相似文献