石蜡光氯化合成氯蜡－70的研究──（Ⅲ）反应过程致色因素考察及生色机理研究

氯蜡－７０是—应用广泛、性能优良的精细化工产品，其色泽是—重要的技术指标，直接影响着产品的质量和应用。本文考察了合成反应过程导致生色的因素，指出原料中含有的少量环烷烃、芳烃、杂环有机物及少量无机杂质能影响产品的色泽，实验表明温度过高，光源波长选择不当也是致色的重要原因。研究了致色的过程，提出其生色历程是按照β－消除反应机理进行的，并做了具体描述。     

扩展有限递归进程模型

主要讨论离散事件动态系统的建模问题。由ＫＩｎａｎ和ＰＶａｒａｉｙａ提出的有限递归进程（ＦＲＰ）是描述并发离散事件动态系统的有力工具，但在其ＦＲＰ中，没有定义对数据变量的操作和条件转移算子。本文扩展ＦＲＰ包括这两方面内容。最后举例说明扩展ＦＲＰ的描述能力。     

葛洲坝水电站水轮机磨蚀评析

作为长江第一坝的葛洲坝水电站,其水轮机磨蚀情况引起国内同行的关注。根据长江的水沙特点、葛洲坝工程泥沙研究成果、十年来运行观测实践、水轮机运行及磨蚀修复状况,对葛洲坝水轮机磨蚀的现状进行了评论和剖析,提出了今后评价和解决葛洲坝水轮机磨蚀的九点建议及意见。     

用硫磺盖帽电探针测定工业炸药爆轰压力

文中介绍了利用硫磺盖帽电探针测定工业炸药爆轰压力的方法，并对煤炭工业常的４类１１个品种炸药的爆轰压力进行了实际测量。     

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本文提出了油井稳定生产状态下的脉冲试井数学模型,利用时间和空间叠加原理求得其解析解。并用非线性回归分析方法来进行脉冲试井分析。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

Postoperative evaluation in mandibular prognathism treated by bilateral sagittal split osteotomy

The present study was undertaken to evaluate the postoperative relapse from the period of unwiring to 1 year postoperatively and its correlation to the amount of mandibular setback and change in vertical dimension after mandibular bilateral sagittal split osteotomy. Twenty-seven patients were evaluated cephalometrically by the time preoperatively, 6 weeks, 6 months and 1 year postoperatively. It was found that 1) the average amount of mandibular setback at pogonion point, 6 weeks postoperatively, is 7.6mm backward and 1.9mm downward, 2) the average amount of horizontal relapse at pogonion point, 6 months and 1 year postoperatively, are 1.9mm and 2.3mm respectively. 86% of the horizontal relapse, 1 year postoperatively, occurs in the first 6 months after removal of intermaxillary fixation, 3) the average amount of vertical relapse at pogonion point, 6 months and 1 year postoperatively, are 0.9mm and 1.1mm upward. 82% of the vertical relapse, 1 year postoperatively, occurs in the first 6 months after removal of intermaxillary fixation, 4) the amount of 1 year postoperatively horizontal relapse is significantly correlated both with the amount of horizontal mandibular set back and vertical downward change (r = 0.58, 0.67, p < 0.001), whereas the amount of vertical relapse is with the vertical downward change only, but horizontal setback isn't.     

管外上升R－113流体的沸腾换热试验

详细介绍了Ｒ－１１３流体管外上升流动的沸腾换热试验，包括试验台架、流量计和温度测量的修正，以及试验数据。拟合的换热关系式为ｑ＝５２８（Ｔｗ─Ｔｓ）１．３３。     

Silicon carbide-toughened zirconia ceramics

Tetragonal zirconia polycrystalline (TZP) ceramics containing SiC reinforcement in the form of fine particles (nano-scale), particles (micro-scale), whiskers and platelets were synthesized by hot-pressing. The effects of morphology and grain size of SiC reinforcement on the strength and fracture toughness at room temperature were investigated. The addition of SiC (in whatever form) caused decreases in strength and toughness at room temperature with the exception of whisker-reinforced materials. Toughness fell off with increasing temperature, but nevertheless retained about one-half of the room-temperature value for that particular SiC reinforcement. However, the whisker- and particle-reinforced materials had higher K _lc values at high temperature than fine particle- or platelet-reinforced materials, with values in excess of 7 MPa m^1/2 at 1000 °C. The microstructure was examined for SiC whisker-reinforced/TZP materials by TEM and HREM, to examine the nature of the whisker/zirconia interface.