现代电子工业Cpk评价中的特殊问题

现代电子工业生产具有许多新的特点，如果不针对具体情况，均采用传统工业生产中广泛使用的常规方法计算其工序能力指数，评价生产工艺水平，将可能导致错误的结论。总结了电子工业生产中工艺参数的典型特点，并讨论了工序能力指数的正确计算方法。     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。     

MOCVD生长薄膜材料制作半导体可饱和吸收镜

介绍了当前国际上流行的用半导体可饱和吸收镜来对固体激光器、光纤激光器和半导体激光器进行被动锁模的方法,阐述了半导体可饱和吸收镜用来作为被动锁模吸收体的原理,并介绍了如何利用金属有机气相淀积(MOCVD)技术生长各种波长激光器所需要的半导体可饱和吸收镜.     

CRL与OCSP相结合的证书撤销方案

提出了一个基于CRL和OCSP策略的新的证书撤销方案。首先分析比较了CRL和OCSP协议的优缺点,然后结合两者的优点通过建立一个请求处理服务器提出了一个新的证书撤销方案,最后对改进方案的优劣做了分析总结。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

瞬态瑞利面波技术在地震勘探方面的应用研究

运用瞬态瑞利面小勘探方法可以在寻找激发岩性和提供静校正所需参数方面取得好的效果。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

碳纳米管(CNT)场发射显示器的关键技术的研究

对碳纳米管阴极的制备以及场发射显示器的真空封装技术进行了研究.利用一种新的碳纳米管生长工艺制备出了具有优良场发射性能的碳纳米管阴极.并将这种直接生长的碳纳米管薄膜作为阴极,结合一种弹性封装工艺,开发了一种具有简单字符显示功能的场发射显示器.该显示器在较低的工作电压下就可获得高亮度的显示效果,并且器件的亮度与驱动电压成较好的线性关系,这将有利于未来的碳纳米管场发射显示器实现高亮度和多级灰度显示.器件的持续工作寿命测试已经超过5500小时,充分验证了碳纳米管作为场发射阴极的应用潜力.     

Modulation and Equalisation Considerations for High Performance Radio LANs

The European Telecommunications Standards Institute (ETSI) has recently defined a European standard for a high performance radio LAN (known as HIPERLAN). To operate as wired LAN replacements, these systems will operate at 5.2 GHz and support instantaneous bit rates of just under 24 Mb/s. To counteract the time dispersive nature of the indoor radio channel, the use of adaptive equalisation is suggested. In this paper a number of possible modulation and equalisation techniques are presented and, in particular, the Bit Error Rate (BER) performance of quasi-coherent GMSK combined with Decision Feedback Equalisation is explored through computer simulation. The trade off between symbol spaced and fractionally spaced equalisation is considered together with the importance of feedfoward and feedback synchronisation to the channel's power delay profile. The paper also includes a comparison of the RLS and LMS based training algorithms and compares the modem developed under the ESPRIT III LAURA project with that specified in HIPERLAN.The application of dual antenna diversity is investigated and its impact on the number of received error free data packets obtained as a function of signal leval and rms delay spread. The use of such diversity is shown to greatly improve the BER performance of a HIPERLAN modem. The problem of frequency offset is considered and modifications are proposed to the HIPERLAN frame structure to improve the receiver's tolerance to such errors. Important practical issues such as frame and symbol synchronisation, frequency offset correction and hardware implementation are discussed from both the LAURA and HIPERLAN viewpoint.