Fabrication of multi-walled carbon nanotube reinforced polyelectrolyte hollow nanofibers by electrospinning

Hybrid hollow multi-walled carbon nanotubes (MWCNTs)/polyelectrolytes (PE) nanofibers were prepared by a combination of the electrospinning method and layer-by-layer (LbL) technique. The mixed polystyrene (PS)/MWCNTs nanofibers were obtained by electrospinning method, which were employed as templates to self-assembly multilayered polyelectrolytes by LbL technique. Hollow MWCNTs/PE nanofibers were obtained by selectively removed part of the template: PS, which is confirmed by Raman spectra, transmission electron microscopy (TEM) and scanning electron microscopy (SEM).     

卧式厚箔剪切机下刀摆动的消除方法

介绍了一种当前铝加工设备中常见的卧式厚箔剪切机.重点分析了其中剪切装置的工作原理,并就其缺陷提出改进方案.     

无线局域网的安全解决方案

本文描述了无线局城网中的认证和密钥管理协议,CCMP认证加密协议。IEEE 802.11依赖于IEEE 802.1x 来支持认证和密钥管理服务,更进一步的,四次握手协议用来建立分组传输的数据加密密钥。IEEE 802.11i也定义了认证者更新一个组暂时密钥(GTK)给请求者的组密钥握手,这样请求者可以接收广播消息。     

2BE1系列水环真空泵在煤矿瓦斯抽放中的应用和选型

2BE1系列水环真空泵越来越广泛地应用于煤矿抽排瓦斯气体,其选型的正确性对煤矿瓦斯抽放安全至关重要。介绍了2BE1系列水环真空泵的工作原理,以及在煤矿瓦斯气体抽放中的应用和选型。     

江苏省本地电话网结构与发展

分片汇接的网状网结构是江苏省本地电话网的基本框架,而汇接局和连接汇接局的传输系统则是网路规划与通信建设的重点。     

专用超大规模集成电路在LED显示系统中的应用

自1976年蒙特利尔奥运会采用了第一块黑白视频显示屏以来，各种大屏幕特别是LED显示屏得到了迅猛发展，在现代信息社会中更是随处可见。在这些显示系统中，应用了大量的不同种类的集成电路作为驱动芯片。本文叙述了运用于LED显示系统中的超大规模集成电路的强大功能。     

北京市部分学校教室采光照明现状分析

近年来我国学生视力不良检出率居高不下,并且呈现明显上升趋势,已经到了极为严重的程度.学校教室的采光照明问题是保护学生视力健康的重要部分.2004年我国重新修订了国家标准〈建筑照明设计标准〉GB50034-2004.本文对北京市部分大中小学校进行采光照明的调查分析,结果显示,北京市学校教室采光照明问题十分严重,与国家标准要求差距很大,在被调查的39间教室中,窗地面积比达标率为20.5%,课桌面照度达标率为25.6%,黑板照度达标率为零.     

复射线展开法分析圆柱面对平面波散射的精度问题

讨论了用复射线展开法计算圆柱面对入射平面波散射时的计算误差特性，提出了控制其计算精度的复射线展开参数选择方法，证实了通过恰当选择展开参数可以有效地提升计算精度、实现误差控制。     

基于计算机声卡的虚拟仪器的设计

主要介绍通过计算机的声卡来实现对虚拟仪器的设计，模拟了示波器、信号发生器和频率计等设备的基本功能，详细介绍了系统的硬件设计方法及软件流程。该系统主要适用于音频范围的各种信号的采集与产生。     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage