Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

转炉溅渣护炉改质剂的开发研究

影响转炉溅渣护炉效果的关键因素是终渣成分的控制,采用改质剂对转炉终渣成分进行调整,降低渣中FeO含量和炉渣温度,提高MgO含量和炉渣熔点及粘度,有利于改善炉渣与炉衬的粘结效果,并提高溅渣层的耐蚀性能,缩短溅渣起孕时间,在一定程度上抑制炉渣中铁的氧化物与炉衬中石墨的反应.     

On the corrosion fatigue crack initiation model and expression of metallic notched elements

In the present study, attempts are made to extend the application of the mechanical model for the fatigue crack initiation (FCI) and the FCI life formula of metallic notched elements in laboratory air to those in the corrosive environment. The test results and analysis of the corrosion FCI (CFCI) life of aluminum alloys and Ti---6A1---4V show that the expression of the CFCI life obtained by modifying the FCI life formula in laboratory air can give a good fit to the test results of the CFCI life. The salt water (3.5% NaCl) environment has no effects on the CFCI resistant coefficient compared with the FCI resistant coefficient in laboratory air. However, 3.5% NaCl environment greatly decreases the CFCI threshold of aluminum alloy, but has little effect on the CFCI threshold of Ti---6A1---4V. The loading frequency ranging from 1 Hz to 10 Hz has no appreciable effect on the CFCI life, and thus, the CFCI threshold of aluminum alloys investigated. Hence, the expression for the CFCI life of metallic notched elements proposed in this study is a better one, which reveals a correlation between the CFCI life and the governing parameters, such as, the geometry of the notched elements, the nominal stress range, the stress ratio, the tensile properties and the CFCI threshold. However, this new expression of the CFCI life needs to be verified by more test results.     

一种多晶硅高温压力传感器

制作压力传感器时，在二氧化硅层上淀积多晶硅膜，既可利用优良的机械特性，又可保证压敏电阻与衬底间具有良好的绝缘性，由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明，这类传感器具有灵敏度好，精度高等特点，电路工作范围为０－２５０℃，且具有良好的温度稳定性。     

心电地图仪中工频干扰的一种滤除方法

在心电地图仪中记录到的体表心电信号往往由于电磁的影响而引进工频干扰．基于体表心电信号中工频干扰的特点，作者提出了一种滤除工频干扰的方法，即就单独—胸导联信号通过提高频谱的分辨率来估计工频干扰的频率；基于最小均方误差准则来估计各导联信号中工频干扰的幅度和相位。文中还给出了该算法的流程图和滤波性能分析。模拟结果表明了该算法的有效性。应用该算法对心电地图仪中的工频干扰进行对消，取得了满意的结果。     

Financial strain, received support, anticipated support, and depressive symptoms in the People's Republic of China.

The purpose of this study is to examine the interface between financial strain, informal received economic support, informal anticipated financial support, and psychological distress in later life. Data provided by a large probability sample of older adults in the People's Republic of China reveal that the relationship between financial difficulty and psychological distress is stronger for older adults who receive more economic assistance. However, the results involving anticipated support are in the opposite direction. More specifically, the association between financial problems and psychological distress is lower for older adults who believe that others stand ready to help in the future should the need arise. A detailed theoretical rationale is developed to explain these results. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

Interfacial segregation of Ti in the brazing of diamond grits onto a steel substrate using a Cu-Sn-Ti brazing alloy

Diamond grits were brazed onto a steel substrate using a prealloyed Cu-10Sn-15Ti (wt pct) brazing alloy at 925 °C and 1050 °C. Due to the relatively high concentration of Ti in the brazing alloy, the braze matrix exhibited a composite structure, composed of β-(Cu,Sn), a Cu-based solid solution, and various intermetallic compounds with different morphologies. The reaction of Ti with diamond yielded a continuous TiC layer on the surfaces of the diamond grits. On top of the TiC growth front, an intermetallic compound, composed of Sn and Ti, nucleated and grew into a randomly interwoven fine lacey structure. An interfacial structure developed as the interwoven fine lacey phase was semicoherently bonded to the TiC layer, with the Cu-based braze matrix filling its interstices. The thickness of such a composite layer was increased linearly with the square root of isothermal holding time at 925 °C, complying with the law of a diffusion-controlled process. However, at 1050 °C, the segregation behavior of Ti and Sn to the interfaces between the TiC layer and the braze matrix diminished, due to the increased solubility of Ti in the Cu-based liquid phase. The enhanced dissolution of Ti in the Cu-based liquid phase at 1050 °C also caused the precipitation of rod-like CuTi with an average diameter of about 0.2 μm during cooling. SnTi₃ was the predominant intermetallic compound and existed in three different forms in the braze matrix. It existed as interconnected grains of large size which either floated to the surface of the braze matrix or grew into faceted grains. It also exhibited a nail-like structure with a mean diameter of about 1 μm for the rod section and a lamellar structure arising from a eutectic reaction during cooling.     

A random switching method for HPWM full-bridge inverter

To overcome the problem of unequal switching loss in power switches, in conventional hybrid pulse width modulation (HPWM) full-bridge inverters, a random switching method for HPWM full-bridge inverters is proposed. The proposed method equalizes switching losses of the four switches, while also providing good output performance     

等偏移距自动初至静校正

茅金根 ,梁秀文 ,杨午阳 ,冯有奎 .等偏移距自动初至静校正 .石油地球物理勘探 ,2 0 0 2 ,37(5 ) :4 6 9～ 4 72　　本文提出一种自动计算静校正量的新方法。它首先在等偏移距道集内对相邻道的初至波采用高精度相关构建一个关于炮、检时差的超大矩阵方程 ,然后采用优化统计迭代算法求解炮点和检波点的静校正量 ,并用概率分布函数确定精确的炮、检静校正量 ,最后用误差校正函数消除炮、检静校正误差。实际资料处理结果表明 ,本方法自动、省时、精度高。