Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode

The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the collection region fill factor. A two-dimensional diffusion model calculates the time-dependent response and steady-state pixel point spread function for cylindrical diodes, and predicts bandwidths near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low as 1000 counts/μs/cm² at an APD gain of 444. A junction doping profile was determined from capacitance–voltage data. Spectral response data shows a gain-independent characteristic.     

Process simulation for HgCdTe infrared focal plane array flexible manufacturing

The strategy and status of a process simulator for the flexible manufacture of HgCdTe infrared focal plane arrays is described. It has capabilities to simulate Hg vacancy and interstitial effects and cation impurity diffusion, for various boundary conditions in one dimension. Numerical complexity of these problems stems from the necessity of solving diffusion equations for each defect that are coupled to each other via nonlinear interaction terms. The simulator has already led to the prediction of heretofore unexplained experimental data. Current extensions of the one-dimensional simulator planned over the next few years include the addition of Te antisites, antisite-Hg vacancy pairs, and In-Hg vacancy pairs, ion implantation, and various energetic processes (such as ion milling). The sequential effect of various processes will be possible with the input to the simulator looking much like a process run sheet.     

Saturation intensity and time response of InGaAs-InGaP MQW opticalmodulators

We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7±0.1) kW/cm² for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations     

Effect of mixed solvents on PCDTBT:PC70BM based solar cells

We investigated the effect of solvents on the morphology, charge transport and device performance of poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC₇₀BM) based solar cells. To carry out this investigation, chloroform and 1,2-dichlorobenzene were chosen as good solvents of the two compounds. Films prepared with chloroform exhibit larger domains than those prepared with 1,2-dichlorobenzene and their size increases with the amount of PC₇₀BM. Fine tuning of the domain size was realized by using a solvent of mixed chloroform and 1,2-dichlorobenzene. At a mixing ratio of 50%:50%, a power conversion efficiency of 6.1% was achieved on PCDTBT:PC₇₀BM (1:3) devices with an active area of 1 cm², under air mass 1.5 global (AM 1.5 G) irradiation at 100 mW/cm².     

Design and Analysis of Microstrip Patch Antenna Using Periodic EBG Structure for C-Band Applications

Wireless Personal Communications - In this paper, an Electromagnetic Band Gap structured microstrip patch antenna is presented. The proposed antenna consists of a rectangular patch which is fed by...     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Simulation of HgTe/CdTe interdiffusion using fundamental point defect mechanisms

A numerical model for interdiffusion in HgTe/CdTe systems based on fundamental point defect mechanisms has been developed. The model includes continuity equations for the flux of Hg and Cd on substitutional sites, cation vacancies, and Hg and Cd interstitials. Interdiffusion is modeled by simulating the coupled diffusion and interaction of these species. The Hg vacancy concentration used in the model was fit to measured hole data as a function of annealing temperature, Hg pressure, and composition. The Cd and Hg interstitial diffusion coefficients and concentrations were determined as a function of temperature and composition from low temperature Hg and Cd self-diffusion data. With this model, interdiffusion is simulated over a range of initial and annealing conditions. At high temperatures and/or Te saturated conditions, interdiffusion is dominated by diffusion via a vacancy mechanism. Interdiffusion is controlled by the flux of Cd interstitials at lower temperatures and/or higher Hg pressures.     

Effect of barrier height on the uneven carrier distribution inasymmetric multiple-quantum-well InGaAsP lasers

Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures demonstrate that carriers are not evenly distributed across the active region of a MQW laser. Wells at the p-side of the active region are preferentially pumped indicating there are more carriers at the p-side of the active region than at the n-side. The structures also demonstrate that decreasing the height of the barriers reduces this effect and results in a more even carrier distribution. Thus, well position and barrier height are shown to be important design parameters for AMQW and conventional MQW lasers     

A new type of ozone generator using Taylor cones on water surfaces

Ozone has been found to be effective in many forms of water treatment. As concerns about the safety of alternate methods of water treatment increase (in particular, chlorination), ozone, which is already extensively used in Europe, offers an effective option. This paper describes a new method of ozone generation particularly suited for use in water purification. Most current industrial ozone production is based on “silent” electrical discharges in a gap between concentric electrodes separated by a glass or ceramic dielectric barrier. The authors present experimental results obtained using a parallel-plate discharge geometry. The lower electrode consists of a grounded “pool” of still water separated by a discharge gap from an upper insulated planar electrode. When the electrode is energized by an AC high voltage, a multitude of “Taylor cones” forms on the water surface. The Taylor cones form and collapse randomly and continuously, depending on the electric field. The tips of the cones provide points for electrical discharge pulses which initiate ozone generation. This method generates ozone in close proximity to the water surface. Laboratory experiments show efficiencies for gaseous ozone production as high as 110 g/kWh     

Analysis of laser source nonlinearity due to longitudinal mode-hopping

The nonlinearity of a frequency-ramped single-mode laser source to be used in optical heterodyne interferometry has been investigated. The analysis is based on mode-hopping due to variation in injection current, temperature and mismatch reflections.