Optical soliton transmission experiment in a comb-like dispersion profiled fiber loop

We discuss the properties of comb-like dispersion profiled fiber (CDPF) for an optical soliton transmission. It is found that the CDPF in which the standard single-mode fiber is placed both at the first and at the end of each section is more suitable to reduce dispersive waves if chirp-free transform limited optical pulse is used as a light source. A 10-ps optical soliton transmission experiment is performed in such a CDPF over 1000 km with the amplifier spacing of 80 km that corresponds to 3.1 times the dispersion distance.     

Nanoimprinting using release-agent-coated resins

A fluorinated self-assembled monolayer (F-SAM) is mainly used as the antisticking layer. To prevent the F-SAM coated on the nanoimprint lithography (NIL) mold from deteriorating, we propose a new form of nanoimprinting using a release-agent-coated resin. The results from measuring the surface free energy and observations by scanning probe microscopy (SPM) confirmed that the surface free energy, frictional force, and adhesion force of the release-agent spray-coated polymethylmethacrylate (PMMA) were lower than those of PMMA. To prove the release-agent spray-coated PMMA had a releasing effect, we tried to undertake thermal nanoimprinting on it using a mold without F-SAM. The pattern was clearly imprinted on the resin without any signs of adhesion.     

Magnetization distribution of magnetic vortex of amorphous FeSiB investigated by electron holography and computer simulation

The three-dimensional spin structure of the magnetic vortex of FeSiB, an amorphous soft magnetic material, was investigated by holography observation and computer simulation. Magnetization distribution in the neighborhood of the vortex center was estimated from the phase distribution obtained by holography observation. To confirm this magnetization distribution, sample-tilting experiments were performed: when the sample was tilted with respect to the electron beam direction, the phase-image center was found to shift along the tilting axis. Finite-element computer simulation was carried out to estimate the amount of shifts of the phase-image center in the sample tilting from the experimental magnetization distributions in the no sample-tilting conditions. We found that the simulated shifts of the phase-image center were in good agreement with those in the sample-tilting experiment, thus confirming the magnetization distribution near the vortex center obtained by holography observation.     

On a compound redundant system with the particular switching devices

This paper considers a standby-redundant system consisting of 2 systems, in which one is main and the other is its standby-redundant system. These systems also consist of 2 subsystems connected in series, in which each one is composed of several identical units connected in parallel.A feature of this system is that the system has 2 switching devices connecting subsystems, in addition to one connecting main and standby systems, in order to utilize surviving units as many as possible. In this consideration it is assumed that all the units are not repairable.We shall obtain the system reliability and the mean time to system failure, and examine numerically the effects of this model to the usual one without particular switching devices.     

Thermoelectric Properties of NdGd<Subscript>1+<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>3</Subscript> Prepared by CS<Subscript>2</Subscript> Sulfurization

Ternary rare-earth sulfides NdGd_1+x S₃, where 0 ≤ x ≤ 0.08, were prepared by sulfurizing Ln₂O₃ (Ln = Nd, Gd) with CS₂ gas, followed by reaction sintering. The sintered samples have full density and homogeneous compositions. The Seebeck coefficient, electrical resistivity, and thermal conductivity were measured over the temperature range of 300 K to 950 K. All the sintered samples exhibit a negative Seebeck coefficient. The magnitude of the Seebeck coefficient and the electrical resistivity decrease systematically with increasing Gd content. The thermal conductivity of all the sintered samples is less than 1.9 W K⁻¹ m⁻¹. The highest figure of merit ZT of 0.51 was found in NdGd_1.02S₃ at 950 K.     

Characterization of amorphous Ni-Si binary alloy films by flash evaporation

We previously reported on an extremely small temperature coefficient of resistivity (TCR) of thin amorphous Ni-Si film resistors fabricated by new flash evaporating method, which have a wide range of resistivity.¹ In the present paper, we describe the structural and chemical properties of these films for the purpose of clarifying the cause of resistive change of films resulting from heat treatment. X-ray diffraction patterns show that Ni-Si films with greater than 20 wt.% Si remains predominantly amorphous after heat treatment. Changes in composition and binding energy of the films resulting from heat treatment are measured by means of XPS. Electrical characteristics are also investigated as a function of Si concentration and temperature. The resistance variations resulting from heat treatment are found to originate from a structural change. The activation energy needed for this change is obtained by analyzing the extent of change during isothermal heating and found to vary from 1 eV to 2.5 eV with increasing Si content from 20 wt.% to 80 wt.%.     

Three-dimensional expression of adhesion molecules on the superficial synovial intima of LPS-induced arthritis of the mouse knee analyzed by immuno-SEM

Three-dimensional microlocalization of adhesion molecules, i.e. ICAM-1 (intercellular adhesion molecule), VCAM-1 (vascular adhesion molecule), LFA-1 (lymphocyte function-associated antigen), Mac-1 (macrophage differentiation antigen) and VLA-4 (very late activation antigen), expressed on type-A synoviocyte (macrophage-like cell) and type-B synoviocyte (fibroblast-like cell), were detected by immuno-scanning electron microscopy (SEM) to investigate the immunoreactive microenvironment of the superficial synovial intima in lipopolysaccharide (LPS)-induced arthritis of the mouse knee. Type-B synoviocytes extended rich slender processes from the periphery and constructed a cytoplasmic network, to which ICAM-1 was restricted. VCAM-1 was expressed only in the LPS-stimulated group and was relatively limited to the microvilli of type-B synoviocytes. Type-A synoviocytes were located randomly among the network with a smoother surface and expressed Mac-1 and LFA-1, which were counter-receptors for ICAM-1, and VLA-4 for VCAM-1 on the microvilli or lamellipodia. Three-dimensional microlocalization of adhesion molecules suggests that the network constructed by cytoplasmic processes and microvilli of type-B synoviocytes forms the pathway for the migration or the foothold for the fixation of type-A synoviocytes and takes part in forming an immunoreactive environment in the articular cavity.     

An active low-pass filter using two capacitive double-layer uniformly distributed RC lines

In this paper we propose an active circuit consisting of two capacitive double-layer uniformly distributed RC lines and an operational amplifier, and present conditions under which the circuit works as the low-pass filter. Furthermore, we present a method for designing the low-pass filter and give a design example where simulation results are included.     

High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-y/Ge/sub x/C/sub y/ base by UHV/CVD

Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si/sub 1-x-y/Ge/sub x/C/sub y/ layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.