Room temperature operation of GaInAs-GaInAsP-InP SCH multiquantum-film laser with narrow wire-like active region

GaInAs-GaInAsP-InP SCH (separate-confinement heterostructure) multiquantum-film lasers with approximately 100-nm-wide wirelike active regions were fabricated by two-step low-pressure organometallic vapor-phase epitaxy (LP-OMVPE) growth and wet chemical etching and operated at room temperature. An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP cover layer growth prior to the regrowth of a GaInAsP optical confinement layer. The fabrication processes presented can be very effective for realization of room-temperature operation of long-wavelength quantum-wire and quantum-box lasers based on GaInAs-InP materials.<>     

Floating-island TFT leakage caused by process step reduction

The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease     

Digital wireless sensor server using an adaptive smart-antenna/retrodirective array

A wireless sensor server is developed based on a reconfigurable active smart-antenna/retrodirective array. The system can serve as both a retrodirective array transponder and a smart-antenna receiver simply by changing the frequency of the local oscillator applied to the mixers, enabling it to utilize its hardware best to suit its communication environment. When operating as a direct-conversion receiver, the receiver array successfully demodulates a quaternary phase-shift keying (QPSK) modulated signal with circuit gain of 7 dB, and E/sub b//N/sub 0/ for BER=10/sup -4/ is approximately 12 dB without any error correction. In the retrodirective array mode, the system provides 20 dB circuit gain and 20 dB radio-frequency/intermediate-frequency isolation at the center frequency as well as phase conjugation, exhibiting excellent retrodirectivity. The mixers perform phase conjugation and modulation simultaneously, enabling the transmission of locally stored data. The local data is successfully extracted by an interrogator.     

Unique Features of Mobile Commerce

While the market potentials and impacts of web-based e-commerce are still in the ascendant, the advances in wireless technologies and mobile networks have brought about a new business opportunity and research attention, what is termed mobile commerce. Commonly, mobile commerce is considered to be another new application of existing web-based e-commerce onto wireless networks, but as an independent business area, mobile commerce has its own advantages and challenges as opposed to traditional e-commerce applications. This paper focuses on exploring the unique features of mobile commerce as compared with traditional e-commerce. Also, there are still some limitations arisen in m-commerce in contrast to web-based e-commerce. Finally, current state of mobile commerce in Japan is presented in brief, with an introduction of several cases involving mobile commerce applications in today's marketplace.     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively     

1 Tbit/s (111 Gbit/s/ch X 10 ch) no-guard-interval CO-OFDM transmission over 2100 km DSF

Spectrally efficient (2bit/s/Hz) 1 Tbit/s DWDM transmission of 111 Gbit/s no-guard-interval PDM CO-OFDM signals with 50 GHz spacing over DSF is demonstrated. The record transmission distance of 2100 km was achieved for a 100 Gbit/s-data-rate CO-OFDM system.     

Light modulator using piezoelectric films with waveguides

A light modulator using piezoelectric films based on optical interference of the Mach-Zehnder type has been proposed and demonstrated. The modulator is constructed with two optical waveguides joined to each other at both ends to divide the incident light and to recombine them, and each waveguide is fabricated on a polyvinylidene fluoride (PVDF) film to serve as a voltage-driven phase-shifter.     

PMD compensation in optical coherent single carrier transmission using frequency-domain equalisation

The transmission performance of optical single-carrier (SC) transmission using frequency-domain equalisation (FDE) to counter polarisation mode dispersion (PMD) is evaluated. 25 Gbit/s coherent optical SC transmission using FDE (CO-SC-FDE) is demonstrated in the presence of a significant amount of differential group delay (DGD). The results show that CO-SC-FDE compensates for the influence of the 125 ps DGD; the OSNR penalty is 0.81 dB.     

Cross-layer selective routing for cost and delay minimization in IEEE 802.11ac wireless mesh network

Wireless Networks - A Wireless Internet-access Mesh NETwork (WIMNET) provides scalable and reliable internet access through the deployment of multiple access points (APs) and gateways (GWs). In...     

High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation

The highest electron mobility yet reported for an InP-based pseudomorphic structure at room temperature, 18300 cm²/V·s, has been obtained by using a structure with an indium composition modulated channel, namely, In_0.53Ga_0.47As/ In_0.8Ga_0.2As/InAs/In_0.8Ga_0.2As/In_0.53Ga_0.47As. Although the total thickness of the high In-content layers (In_0.8Ga_0.2As/InAs/In_0.8Ga_0.2As) exceeds the critical thick-ness predicted by Matthews theory, In_0.8Ga_0.2As insertion makes it possible to form smooth In_0.53Ga_0.47As/In_0.8Ga_0.2As and In_0.8Ga_0.2As/InAs heterointerfaces. This structure can successfully enhance carrier confinement in the high In-content layers. This superior carrier confinement can be expected to lead to the highest yet reported electron mobility.