Numerical method for analysis of turbulent liquid metal magnetohydrodynamic flow

This paper describes a numerical method for analyzing turbulent liquid metal magnetohydrodynamic flow in a rectangular duct under a transverse magnetic field. The main features of the proposed method are as follows: (1) a new iterative solution procedure is implemented to satisfy the conservation law for the electric current density; (2) Buleev's turbulence model is employed to calculate the turbulent intensities and shear stresses. The iterative solution procedure is tested and its ability is illustrated through solution of an example problem that corresponds to Hartmann's theoretical work. In order to verify the applicability of the turbulence model, the present method is applied to an analysis of Reed and Lykoudis's experimental data. The obtained numerical results agree well with the experimental data except for some slight differences.     

Solving regularized least squares with qualitatively controlled adaptive cross‐approximated matrices

The adaptive cross‐approximation (ACA) technique is applied to accelerating an inverse‐problem solver that estimates charge distribution on a dielectric spacer. The ACA generates an approximated system‐matrix that enables us to carry out high‐speed inverse calculation. We designed an approximation procedure based on ACA with some additional concepts, that is, (a) partitioning of matrix based on algebraic information, (b) approximation quality control based on matrix norms, and so on. The tested solver (LSQR for regularized least squares) with ACA demonstrates about 10 times faster performance than that without ACA. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 159(3): 10–18, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20326     

Theory and characteristics of novel variable reluctance 1X resolver

Although brushless resolvers have been used widely as angular position transducers, they are expensive due to their intricate construction, involving a rotary transformer to supply the exciting coils wound on the rotor poles with the current. It is shown theoretically in this paper that the resolver without rotary transformer or brushes can be realized by simple construction, which consists of the stator core with both 4-poles exciting windings and 2-poles output ones and the rotor core carrying no windings. In this resolver the rotor core has minimum gap at one side and a maximum gap at another side of the diameter. It is characterized by an outer surface form that makes the fluctuation part of gap permeance very in proportion to cos θ, where θ represents the angular position of a point in the air gap with respect to the origin on the rotor, the point of minimum air gap. The method determining the rotor form to embody the aforementioned gap permeance variation is also shown. It has been confirmed not only by simulation but also experiment that the 2-phase output voltages of a model designed based on the theory have sinusoidal waveforms with very small harmonic contents. Moreover, the rotor position detected by processing the output voltages through the conventional resolver/digital converter was within acceptable engineering accuracy.     

A simplified cascade current‐source inverter interconnected to a single‐phase three‐wire distribution system and its application to electric energy storage systems with batteries

A novel current source inverter system interconnected to the single‐phase grid is proposed. It has the same construction as the conventional three‐phase current source inverter that is interconnected to the single‐phase three‐wire distribution system. Though the proposed circuit has no output transformer, it can be equivalently performed as the single‐phase double cascade inverter by diverting the pole transformer in the utility system. By controlling the appropriate scheme, the output currents can be obtained as the five‐level waveforms and their distortions can be decreased sufficiently. It is applied to the interactive electric energy storage system with batteries and the basic discharging characteristics are discussed experimentally. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 150(2): 50–61, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10380     

Comparison of selective cytotoxicity of alkyl lysophospholipids

Alkyl lysophospholipids have been shown to be cytooxic to a number of neoplastic tissues. One, ET-18-OCH₃, has been used to selectively purge leukemic cells from mixtures with normal marrow progenitor cells,in vitro andin vivo. We have measured the 50% inhibitory (IC₅₀) effect of a series of ether, lipids (EL) on leukemic cells (HL60, K562, Daudi, KG-1, KG-1a) and normal marrow progenitor cells. Cells were incubated with varying concentrations of EL for 4 hr and assayed for viability, [³H]thymidine incorporation and clonogenicity in semi-solid media. The effect on protein kinase C (PKC) activity was assayed for each compound. Compounds tested included three glycerophosphocholine analogs-ET-18-OCH₃, ET-16-NHCOCH₃, and BM 41.440. In addition, a lipoidal amine, CP 46665, an ethyleneglycolphospholipid, AEPL, and four single chain alkylphosphocholine analogs, HePC₂, HePC₃, HePC₄ and HePC₆ were also tested. During the period of incubation, the cells remained viable (>70%) as judged by trypan blue dye exclusion. The glycerophosphocholines were the most active and showed the highest therapeutic index. The lipoidal amine was active, but toxic to normal marrow progenitor cells. The ethyleneglycolphospholipid was active against HL60, but not against the other cell lines. The single chain alkylphosphocholine analogs were less active. All of the compounds inhibited PKC activity; however, the glycerophosphocholines were the most inhibitory. Based on a paper presented at the Third International Conference on Platelet-Activating Factor and Structurally Related Alkyl Ether Lipids, Tokyo, Japan, May 1989.     

An analysis of ball-and-race milling part II. The babcock E 1.7 mill

A mathematical model was developed for a ball-and-race mill based on specific rates of breakage and primary fragment distributions. The model includes internal classification of particles falling back into the race and external classification due to the built-on classifier. It was demonstrated that the normalized primary fragment distribution produced in a pilot-scale Babcock E-type mill of 17 in. race diameter was the same as in the Hardgrove laboratory test mill and that the specific rates of breakage varied with particle size in the same manner. Steady-state continuous tests on the pilot-scale mill showed that breakage rates depended on the rate of feed, since the mill pulled less power at low feed rates. This effect plus the residence time effect gave coarser product size distributions at low and high feed rates than at a medium feed rate. Model simulations based on parameters measured in the Hardgrove mill correctly predicted the product size distribution from the E-type mill.     

Spherical Aluminum Nitride Fillers for Heat-Conducting Plastic Packages

It is necessary for encapsulants to have not only a suitable coefficient of thermal expansion (CTE) compatible to IC devices and a low dielectric constant to reduce the device propagation delay, but also a high thermal conductivity to dissipate large amounts of heat from power-hungry, high-speed IC and high-density packages. Fillers such as silica have been mixed with polymers to improve their properties. Aluminum nitride (AlN) is considered as an alternative one, because it has a higher theoretical thermal conductivity of ∼320 W/mK¹, a compatible CTE with silicon chips and a low dielectric constant. Commercial AlN fillers are angular in shape, because they are prepared via grinding coarse AlN powders synthesized by direct nitridation of aluminum metal and classification. The angular AlN are not expected to have high fluidity when mixed with polymers and hence low packing density. Recently, we successfully obtained single-crystalline spherical AlN fillers. Furthermore, polymer composites filled with the spherical AlN showed excellent thermal conductivity (>8 W/mK) as encapsulants for dissipating the heat generated in electronic devices.     

Association of Ligamentum Flavum Hypertrophy with Adolescent Idiopathic Scoliosis Progression—Comparative Microarray Gene Expression Analysis

The role of the ligamentum flavum (LF) in the pathogenesis of adolescent idiopathic scoliosis (AIS) is not well understood. Using magnetic resonance imaging (MRI), we investigated the degrees of LF hypertrophy in 18 patients without scoliosis and on the convex and concave sides of the apex of the curvature in 22 patients with AIS. Next, gene expression was compared among neutral vertebral LF and LF on the convex and concave sides of the apex of the curvature in patients with AIS. Histological and microarray analyses of the LF were compared among neutral vertebrae (control) and the LF on the apex of the curvatures. The mean area of LF in the without scoliosis, apical concave, and convex with scoliosis groups was 10.5, 13.5, and 20.3 mm², respectively. There were significant differences among the three groups (p < 0.05). Histological analysis showed that the ratio of fibers (Collagen/Elastic) was significantly increased on the convex side compared to the concave side (p < 0.05). Microarray analysis showed that ERC2 and MAFB showed significantly increased gene expression on the convex side compared with those of the concave side and the neutral vertebral LF cells. These genes were significantly associated with increased expression of collagen by LF cells (p < 0.05). LF hypertrophy was identified in scoliosis patients, and the convex side was significantly more hypertrophic than that of the concave side. ERC2 and MAFB genes were associated with LF hypertrophy in patients with AIS. These phenomena are likely to be associated with the progression of scoliosis.     

Characterization of germanium implanted Si1−xGex layer

Characterization of a Si_1−xGe_x layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.