导弹改进、改型中的飞行力学问题

讨论了导弹飞行性能与作战效能的关系; 介绍了国内外导弹改装、改进、改型中可能遇到的10个方面的飞行力学问题, 即发射动力学问题, 弹道问题, 增加射程(增程)问题, 末端攻击问题, 子弹头抛撒问题, 航迹规划问题, 改变飞行高度(变高)问题, 改变飞行速度(变速)问题, 改变导弹外形(变形)问题, 协同作战问题, 并进行了简短的讨论.     

基于模式的ATS领域框架研究

鉴于自动测试领域软件开发的复杂性,提出了基于层次的体系结构模式和模版、组合、策略、桥接、观察者等设计模式的ATS领域通用框架的解决方案;旨在促使在具体ATS软件的开发中注重使用已有的成功解决方法,努力发现、归纳并应用设计模式,实现软件设计的重用,从而提高ATS软件的可复用性,避免大量的重复性开发工作,提高具体测试软件的开发效率.     

基于粗集的CBR故障诊断案例的检索方法研究

针对基于案例推理的飞机机载设备故障诊断中知识的表示及检索做了研究,对于目前存在的故障案例在知识的表示和案例的检索中遇到的案例表示多样化,案例检索效率低下等问题,提出了类似于故障树的案例检索树,参考k-d的建树方法,利用粗集理论计算案例各个属性重要性,按属性重要性进行检索,这种方法运用在飞机机载设备故障诊断中,可以显著提高案例检索的效率,几乎是传统方法的一半,同时提高了检索结果的精度,减少了匹配的案例个数.     

IMS业务会话在3G和WLAN间的切换方案

介绍了3GPPR6版本中的3G-WLAN融合网络架构,分析了其移动性管理机制的不足,然后在分析比较了潜在的移动性管理协议后,提出了基于SIP实现3G/WLAN（无线局域网）间IMS（IP多媒体子系统）业务会话的切换方案,并探讨了进一步改进的思路.     

基于硬件线性化的铂电阻测温系统

该文介绍了铂电阻的特性和设计方法,详细分析了-种基于硬件线性化的测温电路设计,其具有非线性误差小、测温精度商、易于调试等优点,克服了以往电路依赖于软件校准求解温度的缺点.该电路采用高精废低温漂的基准源为铂电阻形成静态工作电流.     

Anti‐Oxygen Leaking LiCoO2

LiCoO₂ is a prime example of widely used cathodes that suffer from the structural/thermal instability issues that lead to the release of their lattice oxygen under nonequilibrium conditions and safety concerns in Li‐ion batteries. Here, it is shown that an atomically thin layer of reduced graphene oxide can suppress oxygen release from Li_xCoO₂ particles and improve their structural stability. Electrochemical cycling, differential electrochemical mass spectroscopy, differential scanning calorimetry, and in situ heating transmission electron microscopy are performed to characterize the effectiveness of the graphene‐coating on the abusive tolerance of Li_xCoO₂. Electrochemical cycling mass spectroscopy results suggest that oxygen release is hindered at high cutoff voltage cycling when the cathode is coated with reduced graphene oxide. Thermal analysis, in situ heating transmission electron microscopy, and electron energy loss spectroscopy results show that the reduction of Co species from the graphene‐coated samples is delayed when compared with bare cathodes. Finally, density functional theory and ab initio molecular dynamics calculations show that the rGO layers could suppress O₂ formation more effectively due to the strong C? O_cathode bond formation at the interface of rGO/LCO where low coordination oxygens exist. This investigation uncovers a reliable approach for hindering the oxygen release reaction and improving the thermal stability of battery cathodes.     

用MOCVD在偏(100)GaAs基片上生长空间规则排列的1.3μm InAs量子点

用MOCVD技术在偏(1100)GaAs衬底上生长了发光波长在1.3μm的线状空间规则排列InAs量子点.光致发光实验表明,相对于正(100)衬底,偏(100)GaAs衬底上生长的InAs量子点具有更好的材料质量,光谱有更大的强度和更窄的线宽.为了得到发光波长为1.3μm的量子点,对比研究了不同In含量的InGaAs应力缓冲层(SBL)和应力盖层(SCL)的应力缓冲作用.结果表明,增加SCL中In含量能有效延伸量子点发光波长到1. 3μm,但是随着SBL中In的增加,发光波长变化不明显,并且材料质量明显下降.     

大功率GaInP/AlGaInP半导体激光器

制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm-1,内量子效率达80%,透明电流密度为648A/cm2.     

直接激射中红外固体激光器研究进展北大核心CSCD

3~5μm波段中红外激光在遥感、通讯、气体检测、医疗等领域有着广泛的应用前景。直接激射固体激光器具有原理简单、结构轻巧等优势,是3~5μm波段中红外激光产生的重要手段。目前,这类激光器按照增益介质分类可划分为基于Er^(3+)、Ho^(3+)、Dy^(3+)、Pr^(3+)等稀土离子掺杂的固体激光器以及以Fe∶ZnSe为代表的过渡金属离子掺杂的固体激光器。本文分别介绍这两类直接激射固体激光器近些年来的研究进展,并对它们的技术路线以及发展前景进行总结。     

A 6-bit 4 GS/s pseudo-thermometer segmented CMOS DAC

A 6-bit 4 GS/s, high-speed and power-efficient DAC for ultra-high-speed transceivers in 60 GHz band millimeter wave technology is presented. A novel pseudo-thermometer architecture is proposed to realize a good compromise between the fast conversion speed and the chip area. Symmetrical and compact floor planning and layout techniques including tree-like routing, cross-quading and common-centroid method are adopted to guarantee the chip is fully functional up to near-Nyquist frequency in a standard 0.18 #m CMOS process. Post simulation results corroborate the feasibility of the designed DAC, which can perform good static and dynamic linearity without calibration. DNL errors and INL errors can be controlled within 4-0.28 LSB and 4-0.26 LSB, respectively. SFDR at 4 GHz clock frequency for a 1.9 GHz near-Nyquist sinusoidal output signal is 40.83 dB and the power dissipation is less than 37 roW.