Uniaxial-process-induced strained-Si: extending the CMOS roadmap

This paper reviews the history of strained-silicon and the adoption of uniaxial-process-induced strain in nearly all high-performance 90-, 65-, and 45-nm logic technologies to date. A more complete data set of n- and p-channel MOSFET piezoresistance and strain-altered gate tunneling is presented along with new insight into the physical mechanisms responsible for hole mobility enhancement. Strained-Si hole mobility data are analyzed using six band k/spl middot/p calculations for stresses of technological importance: uniaxial longitudinal compressive and biaxial stress on [001] and [110] wafers. The calculations and experimental data show that low in-plane and large out-of-plane conductivity effective masses and a high density of states in the top band are all important for large hole mobility enhancement. This work suggests longitudinal compressive stress on [001] or [110] wafers and <110> channel direction offers the most favorable band structure for holes. The maximum Si inversion-layer hole mobility enhancement is estimated to be /spl sim/ 4 times higher for uniaxial stress on (100) wafer and /spl sim/ 2 times higher for biaxial stress on (100) wafer and for uniaxial stress on a [110] wafer.     

Adaptive processing using real weights based on a direct data domain least squares approach

In traditional, adaptive signal processing algorithms one change both the amplitude and phase of the weight vectors associated with an array at each of the antenna elements. The use of complex weights offers greater control over the array response at the expense of system complexity. However, it is easier if one requires only amplitude variation with a fixed phase for all the weight vectors associated with all the antenna elements. Because one uses only real arithmetic operations to find the amplitude of the weights connected to the antenna, the computational complexity is reduced considerably. Hence, this paper addresses the use of real weights in an adaptive system. In this paper we describe a new direct data domain least squares (D/sup 3/LS) method using real weights, which utilizes only a single snapshot of the data for adaptive processing. This technique may be useful for real time implementation of the D/sup 3/LS method on a chip.     

Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

The effects of the amount of RuO₂ added in the Ta film on the electrical properties of a Ta-RuO₂ diffusion barrier were investigated using n⁺⁺-poly-Si substrate at a temperature range of 650–800°C. For the Ta layer prepared without RuO₂ addition, Ta₂O₅ phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO₂ incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO₂ crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemially strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO₂ added. Since a kinetic barrier for nucleation in formation of the crystalline Ta₂O₅ phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO₂ phase from nanocrystalline RuO_x phase, the formation of the RuO₂ phase by reaction between the indiffused oxygen and the RuO_x nanocrystallites is kinetically more favorable than that of Ta₂O₅ phase.     

A learning approach of wafer temperature control in a rapid thermalprocessing system

This paper presents a learning approach for wafer temperature control in a rapid thermal processing system (RTP). RTP is very important for semiconductor processing system and requires an accurate trajectory following. Numerous studies have addressed this problem and most research on this problem requires exact knowledge of the system dynamics. The various approaches do not guarantee the desired performance in practical applications when there exist some modeling errors between the model and the actual system. In this paper, iterative learning control scheme is applied to RTP without exact information on the dynamics. The learning gain of the iterative learning law is estimated by neural networks instead of a mathematical model. In addition, the control information obtained by the iterative learning controller (ILC) is accumulated in the feedforward neuro controller (FNC) for generalization to various reference profiles. Through numerical simulations, it is demonstrated that the proposed method can achieve an accurate output tracking even without an exact RTP model. The output errors decrease rapidly through iterations when using the learning gain estimated and the FNC yields a reduced initial error, and so requires small iterations     

Stator-flux-oriented control of induction motor considering ironloss

Research to consider the influences of iron loss has been made in the vector control of an induction motor. However, little work has been done in the area of a stator-flux-oriented control system of an induction motor. This paper investigates the effects of iron loss in the direct stator-flux-oriented control system of an induction motor, and proposes a control algorithm considering iron loss. The iron loss is modeled by equivalent iron loss resistance in parallel to the magnetizing inductance. Torque control capability is much improved and the speed estimation error for a speed-sensorless drive is reduced by the proposed control algorithm. The effectiveness of the proposed method is verified by simulation and experimental results     

Ceramic chip antenna using meander conductor lines

A ceramic chip antenna using meander conductor lines has been designed, fabricated, and measured. The measured impedance bandwidth is 9.8% (1.85-2.06 GHz). It is increased to 19.1% (1.89-2.29 GHz) with an adjacent conducting plane. The radiation patterns are similar to that of a monopole antenna. The antenna gain is ~1.5 dBi     

Performance of 2-D RAKE receiver in a correlatedfrequency-selective Nakagami-fading

The bit error rate (BER) performance and the characteristics of a two-dimensional (2-D) RAKE receiver operating in a correlated frequency-selective Nakagami-fading environment are analyzed. Correlated fading between array elements whose fading statistics are identical across the same RAKE branch, as well as an arbitrary number of RAKE-branches with arbitrary finding statistics, are assumed. We derived an approximated signal-to-noise ratio (SNR) statistics for one RAKE branch with correlated multiple antennas, which is extended to that for multiple RAKE branches with arbitrary fading statistics, i.e., a 2-D RAKE receiver. The receiver's performance and characteristics are analyzed using the cumulative distribution function of the SNR at the 2-D RAKE receiver output and the BER under various conditions, Numerical results show that the improvement In performance of the 2-D RAKE receiver is brought about by the average SNR and diversity gains, which are identified by two parameters specifying the gamma distribution of SNR     

Dislocation scattering in n-GaN

The scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a relationship. Temperature-variation mobility plots also indicate that a T^3/2 dependence component is present, which is also attributed to dislocation scattering.     

3D Printable One-Part Carbon Nanotube-Elastomer Ink for Health Monitoring Applications

3D printing of conductive elastomers is a promising route to personalized health monitoring applications due to its flexibility and biocompatibility. Here, a one-part, highly conductive, flexible, stretchable, 3D printable carbon nanotube (CNT)-silicone composite is developed and thoroughly characterized. The one-part nature of the inks: i) enables printing without prior mixing and cures under ambient conditions; ii) allows direct dispensing at ≈100 µm resolution printability on nonpolar and polar substrates; iii) forms both self-supporting and high-aspect-ratio structures, key aspects in additive biomanufacturing that eliminate the need for sacrificial layers; and iv) lends efficient, reproducible, and highly sensitive responses to various tensile and compressive stimuli. The high electrical and thermal conductivity of the CNT-silicone composite is further extended to facilitate use as a flexible and stretchable heating element, with applications in body temperature regulation, water distillation, and dual temperature sensing and Joule heating. Overall, the facile fabrication of this composite points to excellent synergy with direct ink writing and can be used to prepare patient-specific wearable electronics for motion detection and cardiac and respiratory monitoring devices and toward advanced personal health tracking and bionic skin applications.     

Modeling and Simulation of New Encoding Schemes for High‐Speed UHF RFID Communication

In this paper, we present novel high‐speed transmission schemes for high‐speed ultra‐high frequency (UHF) radio‐frequency identification communication. For high‐speed communication, tags communicate with a reader using a high‐speed Miller (HS‐Miller) encoding and multiple antennas, and a reader communicates with tags using extended pulse‐interval encoding (E‐PIE). E‐PIE can provide up to a two‐fold faster data rate than conventional pulse‐interval encoding. Using HS‐Miller encoding and orthogonal multiplexing techniques, tags can achieve a two‐ to three‐fold faster data rate than Miller encoding without degrading the demodulation performance at a reader. To verify the proposed transmission scheme, the MATLAB/Simulink model for high‐speed backscatter based on an HS‐Miller modulated subcarrier has been designed and simulated. The simulation results show that the proposed transmission scheme can achieve more than a 3 dB higher BER performance in comparison to a Miller modulated subcarrier.