Uniaxial-process-induced strained-Si: extending the CMOS roadmap

This paper reviews the history of strained-silicon and the adoption of uniaxial-process-induced strain in nearly all high-performance 90-, 65-, and 45-nm logic technologies to date. A more complete data set of n- and p-channel MOSFET piezoresistance and strain-altered gate tunneling is presented along with new insight into the physical mechanisms responsible for hole mobility enhancement. Strained-Si hole mobility data are analyzed using six band k/spl middot/p calculations for stresses of technological importance: uniaxial longitudinal compressive and biaxial stress on [001] and [110] wafers. The calculations and experimental data show that low in-plane and large out-of-plane conductivity effective masses and a high density of states in the top band are all important for large hole mobility enhancement. This work suggests longitudinal compressive stress on [001] or [110] wafers and <110> channel direction offers the most favorable band structure for holes. The maximum Si inversion-layer hole mobility enhancement is estimated to be /spl sim/ 4 times higher for uniaxial stress on (100) wafer and /spl sim/ 2 times higher for biaxial stress on (100) wafer and for uniaxial stress on a [110] wafer.     

Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

The effects of the amount of RuO₂ added in the Ta film on the electrical properties of a Ta-RuO₂ diffusion barrier were investigated using n⁺⁺-poly-Si substrate at a temperature range of 650–800°C. For the Ta layer prepared without RuO₂ addition, Ta₂O₅ phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO₂ incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO₂ crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemially strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO₂ added. Since a kinetic barrier for nucleation in formation of the crystalline Ta₂O₅ phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO₂ phase from nanocrystalline RuO_x phase, the formation of the RuO₂ phase by reaction between the indiffused oxygen and the RuO_x nanocrystallites is kinetically more favorable than that of Ta₂O₅ phase.     

3D Printable One-Part Carbon Nanotube-Elastomer Ink for Health Monitoring Applications

3D printing of conductive elastomers is a promising route to personalized health monitoring applications due to its flexibility and biocompatibility. Here, a one-part, highly conductive, flexible, stretchable, 3D printable carbon nanotube (CNT)-silicone composite is developed and thoroughly characterized. The one-part nature of the inks: i) enables printing without prior mixing and cures under ambient conditions; ii) allows direct dispensing at ≈100 µm resolution printability on nonpolar and polar substrates; iii) forms both self-supporting and high-aspect-ratio structures, key aspects in additive biomanufacturing that eliminate the need for sacrificial layers; and iv) lends efficient, reproducible, and highly sensitive responses to various tensile and compressive stimuli. The high electrical and thermal conductivity of the CNT-silicone composite is further extended to facilitate use as a flexible and stretchable heating element, with applications in body temperature regulation, water distillation, and dual temperature sensing and Joule heating. Overall, the facile fabrication of this composite points to excellent synergy with direct ink writing and can be used to prepare patient-specific wearable electronics for motion detection and cardiac and respiratory monitoring devices and toward advanced personal health tracking and bionic skin applications.     

Modeling and Simulation of New Encoding Schemes for High‐Speed UHF RFID Communication

In this paper, we present novel high‐speed transmission schemes for high‐speed ultra‐high frequency (UHF) radio‐frequency identification communication. For high‐speed communication, tags communicate with a reader using a high‐speed Miller (HS‐Miller) encoding and multiple antennas, and a reader communicates with tags using extended pulse‐interval encoding (E‐PIE). E‐PIE can provide up to a two‐fold faster data rate than conventional pulse‐interval encoding. Using HS‐Miller encoding and orthogonal multiplexing techniques, tags can achieve a two‐ to three‐fold faster data rate than Miller encoding without degrading the demodulation performance at a reader. To verify the proposed transmission scheme, the MATLAB/Simulink model for high‐speed backscatter based on an HS‐Miller modulated subcarrier has been designed and simulated. The simulation results show that the proposed transmission scheme can achieve more than a 3 dB higher BER performance in comparison to a Miller modulated subcarrier.     

Enhanced Performance of I2‐Free Solid‐State Dye‐Sensitized Solar Cells with Conductive Polymer up to 6.8%

An iodine‐free solid‐state dye‐sensitized solar cell (ssDSSC) is reported here, with 6.8% energy conversion efficiency—one of the highest yet reported for N719 dye—as a result of enhanced light harvesting from the increased transmittance of an organized mesoporous TiO₂ interfacial layer and the good hole conductivity of the solid‐state‐polymerized material. The organized mesoporous TiO₂ (OM‐TiO₂) interfacial layer is prepared on large‐area substrates by a sol‐gel process, and is confirmed by scanning electron microscopy (SEM) and grazing incidence small‐angle X‐ray scattering (GISAXS). A 550‐nm‐thick OM‐TiO₂ film coated on fluorine‐doped tin oxide (FTO) glass is highly transparent, resulting in transmittance increases of 8 and 4% compared to those of the bare FTO and conventional compact TiO₂ film on FTO, respectively. The high cell performance is achieved through careful control of the electrode/hole transport material (HTM) and nanocrystalline TiO₂/conductive glass interfaces, which affect the interfacial resistance of the cell. Furthermore, the transparent OM‐TiO₂ film, with its high porosity and good connectivity, exhibits improved cell performance due to increased transmittance in the visible light region, decreased interfacial resistance ( Ω ), and enhanced electron lifetime ( τ ). The cell performance also depends on the conductivity of HTMs, which indicates that both highly conductive HTM and the transparent OM‐TiO₂ film interface are crucial for obtaining high‐energy conversion efficiencies in I₂‐free ssDSSCs.     

Self‐Healing Reduced Graphene Oxide Films by Supersonic Kinetic Spraying

The industrial scale application of graphene and other functional materials in the field of electronics has been limited by inherent defects, and the lack of simple deposition methods. A simple spray deposition method is developed that uses a supersonic air jet for a commercially available reduced graphene oxide (r‐GO) suspension. The r‐GO flakes are used as received, which are pre‐annealed and pre‐hydrazine‐treated, and do not undergo any post‐treatment. A part of the considerable kinetic energy of the r‐GO flakes entrained by the supersonic jet is used in stretching the flakes upon impact with the substrate. The resulting “frozen elastic strains” heal the defects (topological defects, namely Stone‐Wales defect and C₂ vacancies) in the r‐GO flakes, which is reflected in the reduced ratio of the intensities of the D and G bands in the deposited film. The defects can also be regenerated by annealing.     

Statistical Models for Hot Electron Degradation in Nano-Scaled MOSFET Devices

In a MOS structure, the generation of hot carrier interface states is a critical feature of the item's reliability. On the nano-scale, there are problems with degradation in transconductance, shift in threshold voltage, and decrease in drain current capability. Quantum mechanics has been used to relate this decrease to degradation, and device failure. Although the lifetime, and degradation of a device are typically used to characterize its reliability, in this paper we model the distribution of hot-electron activation energies, which has appeal because it exhibits a two-point discrete mixture of logistic distributions. The logistic mixture presents computational problems that are addressed in simulation.     

Single, Depolarized, CW Supercontinuum-Based Wavelength-Division-Multiplexed Passive Optical Network Architecture With C-Band OLT, L-Band ONU, and U-Band Monitoring

We propose and experimentally demonstrate a novel bidirectional wavelength-division-multiplexed passive optical network architecture that fully utilizes the superior optical properties of an incoherent continuous-wave (CW) supercontinuum (SC) source. The proposed architecture, which incorporates low-cost Fabry-Perot laser diodes that have been wavelength locked by spectrum-sliced beams from a depolarized 130-nm-bandwidth CW SC source, is based on a unique wavelength band allocation scheme of the C-band for an optical line terminal (OLT), the L-band for optical network units (ONUs), and the U-band for channel monitoring. A cost-effective network that features a single broadband source at the OLT, and no additional wavelength- band-selective monitoring beam reflector at each ONU can be readily achieved. The experimental demonstration presented in this paper is carried out at a data rate of 622 Mb/s over a 25-km standard single-mode fiber.     

Detection of laryngeal function using speech andelectroglottographic data

The purpose of this research was to develop quantitative measures for the assessment of laryngeal function using speech and electroglottographic (EGG) data. We developed two procedures for the detection of laryngeal pathology: 1) a spectral distortion measure using pitch synchronous and asynchronous methods with linear predictive coding (LPC) vectors and vector quantization (VQ) and 2) analysis of the EGG signal using time interval and amplitude difference measures. The VQ procedure was conjectured to offer the possibility of circumventing the need to estimate the glottal volume velocity wave-form by inverse filtering techniques. The EGG procedure was to evaluate data that was "nearly" a direct measure of vocal fold vibratory motion and thus was conjectured to offer the potential for providing an excellent assessment of laryngeal function. A threshold based procedure gave 75.9 and 69.0% probability of pathological detection using procedures 1) and 2), respectively, for 29 patients with pathological voices and 52 normal subjects. The false alarm probability was 9.6% for the normal subjects.     

Environmental effects on the electrical behavior of pentacene thin-film transistors with a poly(methyl methacrylate) gate insulator

The electrical properties of top-contact pentacene thin-film transistors (TFTs) with a poly(methyl methacrylate) (PMMA) gate dielectric were analyzed in air and vacuum environments. Compared to the vacuum case, the pentacene TFT in air exhibited lower drain currents and more pronounced shifts in the threshold voltage upon reversal of the gate voltage sweep direction, together with a decrease in the field-effect mobility. These characteristic variations were explained in terms of two distinctive actions of polar H₂O molecules in pentacene TFT. H₂O molecules were suggested to diffuse under the source and drain contacts and interrupt the charge injection into the pentacene film, whereas those that permeate at the pentacene/PMMA interface retard hole depletion in and around the TFT channel. The diffusion process was much slower than the permeation process. The degraded TFT characteristics in air could be recovered mostly by storing the device under vacuum, which suggests that the air instability of TFTs is due mainly to the physical adsorption of H₂O molecules within the pentacene film.