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101.
This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices.  相似文献   
102.
A multichannel functional electrical stimulation (FES) system for the restoration of quadriplegic upper extremity function is described. The system is composed of a personal computer NEC PC-8801mkII, peripheral electronic circuits, CRT display and respiratory sensors for volitional control by the patient, and percutaneous electrodes. A C4 quadriplegic patient could drink canned tea by herself by using this FES system. Distinct features of the system are as follows: 1) Versatile volitional control was realized by controlling the memory allocation of the stored stimulation data by voluntary respiratory signals. 2) Sophisticated fine control of the fingers, wrists, and elbow was realized by creating the multichannel stimulation data from recorded myoelectric activities of normal subjects during movements of the upper limb.  相似文献   
103.
LEAlB14 (orthorhombic, Imam) (LE = Li, Mg) crystals were grown using metal salts (Li2CO3, LiF, LiI, MgO, MgF2, MgI2) and crystalline boron from a high-temperature aluminium metal flux. The growth conditions for growing LEAlB14 were established using the starting mixtures of B/LE = 2.0, and Al metal was added to each mixture at a mass ratio of 1:15–20. LEAlB14 crystals from the Al-self flux using metal salts could be obtained from all the different salts. The maximum dimensions of LiAlB14 and MgAlB14 crystals were approximately 18 and 12 mm for the crystals obtained from LiF and MgF2. The unit-cell parameters of as-grown LEAlB14 are as follows: for LiAlB14, obtained from LiF, a = 0.5846 (2) nm, b = 0.8144 (2) nm, c = 1.0355 (3) nm, V = 0.4930 (2) nm3: for MgAlB14, obtained from MgF2, a = 0.5845 (2) nm, b = 0.8114 (2) nm, c = 1.0330 (3) nm, V = 0.4899 (3) nm3. Microhardness, oxidation resistance and magnetic susceptibility of these materials are described in detail.  相似文献   
104.
Mesoporous carbon thin films with ordered structures were prepared by using resorcinol-surfactant self-assembly. A mixture of resorcinol, surfactant, and ethanol coated on silicon substrates was exposed to formaldehyde vapor as a cross-linking agent to form structured resorcinol/formaldehyde resin films. The films were then carbonized at 800 °C in an inert atmosphere to remove the surfactant and to obtain structured carbon materials. With this vapor infiltration method, thin films with several structures were obtained from the same precursor solution by employing different vapor infiltration temperatures. The results were interpreted from the transformation of the self-assembly during the vapor infiltration process.  相似文献   
105.
The free energy of the Fe-base ternary ordering alloys whereB2 andD03 ordered structures are formed is evaluated. The statistical theory is employed using a pairwise interaction approximation taking into account not only the atomic interaction but also the magnetic interaction, based upon the Bragg-Williams-Gorsky model. The application of this model on Fe-Si-Co ordering alloys are demonstrated. The propriety of the calculation results are performed by comparing the experimental results. The influences of the magnetic energy to the stability of ordered structures are also demonstrated.  相似文献   
106.
When the interference is coherent with the desired signal, the conventional adaptive arrays working under the guiding principle of output power minimization tend to cancel the desired signal by using the coherent interference. A technique is described which enables the adaptive array to function even under such an environment. The array is divided into subarrays, whose input correlation matrices are adaptively averaged so as to produce a Toeplitz matrix which would be obtained when the interference did not correlate with the desired signal. The averaged matrix is now free from correlation terms between the desired signal and interference, and therefore may be used to derive the optimum weight for the array element just as in the ordinary radio environment of incoherent interference. Numerical examples show that the new adaptive array is highly capable to suppress the coherent interferences as well as incoherent ones.  相似文献   
107.
The thermoelectric half-Heusler compounds Ti x NiSn0.998Sb0.002 (x = 1.0 to 1.2) and Ti y Zr0.25Hf0.25NiSn0.998Sb0.002 (y = 0.5 to 0.65) with nonstoichiometric nominal compositions were prepared by spin-casting and subsequent annealing at 1073 K for 24 h. The dimensionless figure of merit ZT at room temperature was maximized at x = 1.1 and y = 0.6 in Ti-rich compounds through an increase in absolute Seebeck coefficients despite a decrease in electrical conductivities. ZT reached 0.07 at x = 1.1 and 0.14 at y = 0.6. In powder x-ray diffraction analysis, minor phases of β-Sn, TiNi, Ti2Sn, and Ti5Sn3 were observed in addition to a major phase of half-Heusler. The quantity of the minor phases was minimized at x = 1.1 and y = 0.55, where the absolute Seebeck coefficients are maximized. In transmission electron microscopic (TEM) analysis of Ti0.55Zr0.25Hf0.25NiSn0.998Sb0.002, crystal grains of the half-Heusler phase, from several hundred nanometers to several micrometers in size, were observed. TEM energy-dispersive spectroscopy measurements indicated that fluctuations of Ti, Zr, and Hf compositions within the Ti-site in the half-Heusler phase may occur. Thermoelectric properties were improved at x = 1.1 and y = 0.6 rather than at the stoichiometric compositions of x = 1.0 and y = 0.5 due to minimization of the precipitate quantities.  相似文献   
108.
109.
We investigated author information in scientific articles by approximately 7,000 researchers for a quantitative analysis of researchers’ international mobility. From top journals, we traced the movements of more than 2,200 researchers in the research domains of robotics, computer vision and electron devices. We categorized countries’ characteristics for the balance between the inflow and the outflow of researchers moving internationally. Flow patterns of international mobility confirm that the United States, China and India exhibit the greatest global flows of researchers, with Singapore and Hong Kong attracting remarkable numbers of researchers from other countries. International mobility focusing on institutions reveals that universities in Singapore receive as many foreign researchers as do research universities in the United States. Furthermore, firms and international collaborative research institutes act as alternative receivers to the universities in the electron devices research domain.  相似文献   
110.
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