Microstructure and Thermoelectric Properties of Dense YB<Subscript>22</Subscript>C<Subscript>2</Subscript>N Samples Fabricated Through Spark Plasma Sintering

Dense samples of the higher boride YB₂₂C₂N have been fabricated through the spark plasma sintering (SPS) method with different sintering aids. YB₂₂C₂N is a representative of a series of newly discovered rare-earth borocarbonitrides, which may be the long-awaited n-type counterpart of boron carbide, “B₄C.” The effect of Si, SiC, Al, and TiC additions on the sintering process of YB₂₂C₂N has been studied. The best sintered bodies with densities higher than 90% of theoretical density were obtained by means of SPS at 1700°C. We show that the additive choice and pressure have an effect on grain size and density. An investigation of the effect of atmosphere on the sintering behavior has also been carried out. It was found that sinterability is enhanced under nitrogen atmosphere. Thermoelectric properties of the materials sintered with additives have been evaluated, and we discuss their dependences on the fabrication process route.     

Quantitative analysis of collaborative and mobility networks

This study proposes a quantitative analysis of researcher mobility (i.e. transfer from one institution to another) and collaborative networks on the basis of author background data extracted from biographical notes in scientific articles to identify connections that are not revealed via simple co-authorship analysis. Using a top-ranked journal in the field of computer vision, we create a layered network that describes various aspects of author backgrounds, demonstrating a geographical distribution of institutions. We classify networks according to various dimensions including authors, institutions and countries. The results of the quantitative analysis indicate that mobility networks extend beyond the typical collaborative networks describing institutional and international relationships. We also discuss sectoral collaboration considering the mobility networks. Our findings indicate a limitation of collaborative analysis based on bibliometric data and the importance of tracing researcher mobility within potential networks to identify the true nature of scientific collaboration.     

High speed SOI CMOS image sensor with pinned photodiode on handle wafer

We have fabricated SOI CMOS active pixel image sensor with pinned photodiode on handle wafer. The structure of one pixel is a four-transistor type active pixel image sensor, which consists of a reset and a source follower transistor on seed wafer, and is comprised of a photodiode, a transfer gate, and a floating diffusion on handle wafer. The photodiode could be optimized for better quantum efficiency and low dark currents because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. Most of the wavelengths are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The response time of SOI CMOS active pixel sensor was about 2 times faster than that of bulk CMOS active pixel image sensor.     

An integrated laser blood flowmeter

We have constructed a very small and lightweight blood flowmeter using micromachining and surface mounting techniques for a wearable health monitoring system. The hybrid integrated structure of the optical system incorporates a InGaAsP-InP distributed feedback laser diode (DFB-LD) with a wavelength of 1310 nm, an edge-illuminated photodiode (PD) and a polyimide waveguide on silicon substrate (2 mm /spl times/ 3 mm). This integrated flowmeter can be positioned directly on the tissue and permits real-time monitoring of capillary microcirculation. In-vivo measurements of blood perfusion in a finger confirm the feasibility of the blood flowmeter.     

A circuit technology for high-speed battery-operated 16-Mb CMOSDRAM's

A battery-operated 16-Mb CMOS DRAM with address multiplexing has been developed by using an existing 0.5-μm CMOS technology. It can access data in 36 ns when powered from a 1.8-V battery-source, and 20 ns at 3.3 V. However, this device requires a mere 57 mA of operating current for an 80-ns cycle time and only 5 μA of standby current at 3.3 V. To achieve both high-speed and low-power operation, the following four circuit techniques have been developed: 1) a parallel column access redundancy (PCAR) scheme coupled with a current sensing address comparator (CSAC), 2) an N&PMOS cross-coupled read-bus-amplifier (NPCA), 3) a gate isolated sense amplifier (GISA) with low V_T, and 4) a layout that minimizes the length of the signal path by employing the lead on chip (LOC) assembly technique     

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

Interface properties of MBE-grown ZnSe/GaAs substrate systems formed on variously pretreated GaAs surfaces, which include standard chemically etched (5H₂SO₄:1H₂O₂: 1H₂O), (NH₄)₂S_x-, NH₄I-, and HF-pretreated surfaces, are investigated by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. A HF-pretreated and annealed ZnSe/p-GaAs sample showed marked reduction of interface state density, N_ss, with N_ss,_min below 4 x 10¹¹cm^-2 eV^-1 near E_c- E_FS= 1.0 eV. The value is about one order of magnitude smaller than that of the standard chemically etched interface, and comparable to (NH₄)₂S_x- pretreated interface. Nevertheless, C-V characteristics of ZnSe/nGaAs samples, which were measured for the first time, indicate that interface Fermi level, E_FS, is not completely unpinned due to the interface states located above the midgap. A consistent result was obtained by DLTS method in determining E_FS position. The influence of N_ss distribution on vertical current conduction is also analyzed. It is found that U-shaped interface states with N_ss(E) > 1 x 10¹³ cm^-2 eV^-1 above the midgap may cause an excess voltage drop larger than a few volts at the interface.     

Solar energy powered Rankine cycle using supercritical CO2

A solar energy powered Rankine cycle using supercritical CO₂ for combined production of electricity and thermal energy is proposed. The proposed system consists of evacuated solar collectors, power generating turbine, high-temperature heat recovery system, low-temperature heat recovery system, and feed pump. The system utilizes evacuated solar collectors to convert CO₂ into high-temperature supercritical state, used to drive a turbine and thereby produce mechanical energy and hence electricity. The system also recovers heat (high-temperature heat and low-temperature heat), which could be used for refrigeration, air conditioning, hot water supply, etc. in domestic or commercial buildings. An experimental prototype has been designed and constructed. The prototype system has been tested under typical summer conditions in Kyoto, Japan; It was found that CO₂ is efficiently converted into high-temperature supercritical state, of while electricity and hot water can be generated. The experimental results show that the solar energy powered Rankine cycle using CO₂ works stably in a trans-critical region. The estimated power generation efficiency is 0.25 and heat recovery efficiency is 0.65. This study shows the potential of the application of the solar-powered Rankine cycle using supercritical CO₂.     

Air‐Pulse‐Drive Fabrication of Photonic Crystal Films of Colloids with High Spectral Quality

A fast and highly controllable method of fabricating large films of photonic crystals of colloids is reported. A charge‐stabilized colloidal suspension was run in a flat capillary driven by a pressure‐regulated air pulse. The colloidal crystal texture formed in the capillary was a sensitive function of air pressure. Above a critical pressure, the entire capillary was filled with a uniform single‐domain texture whose transmittance spectrum showed a high quality as a photonic crystal, i.e., excellent opacity at a photonic bandgap and high transparency at other wavelengths. The present method is easily applicable to industrial processes for mass production.     

Imaging of a single atomic column in silicon grain boundary

Atomic resolution high voltage electron microscopy was applied in investigations of the atomic structure of [112] sigma3 CSL grain boundary of silicon. Images of the grain boundary, viewed in the < 110 > direction, showed two types of dark spots. One type was rod shaped, which represented an atomic pair aligned in the < 111 > direction. The other was a small round spot, which represented a single atomic column in the grain boundary. The atomic structure of [112] sigma3 CSL grain boundary was directly shown from the atomic-structure image.