Creep-rupture behaviour of notched oxide/oxide ceramic matrix composite in combustion environment

ABSTRACT

Creep-rupture tests were performed in the combustion environment on double-edge notch and centre hole oxide/oxide ceramic matrix composite specimens. The specimens were exposed to the maximum temperature of 1250?±?50°C in the notch region where the combustion flame directly impinged. Specimens were loaded to the desired creep load levels and the loads were sustained till either the specimens ruptured or a run-out time of 25?h was achieved. Optical and scanning electron microscopes were used to characterise specimen damage. The test results were compared to its counterparts in 1200°C (isothermal) laboratory air environment. At a given creep life, the applied creep stress for both the notch types was generally lower in the combustion environment than the laboratory air environment. Finite element simulations attributed lower applied creep stress in the combustion environment to the presence of thermal gradient stresses, which were not present in the isothermal laboratory air environment.     

Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field‐effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.     

EFFECTS OF CUTTING SPEED WHEN TURNING AGE HARDENED INCONEL 718 WITH PCBN TOOLS OF BINDERLESS AND LOW-CBN GRADES

Application of polycrystalline cubic boron nitride (PCBN) tools as an alternative for ceramic and cemented carbide tools in machining superalloys has been frequently identified as a solution for enhancing process efficiency but only a limited number of studies has been done in this area. The current study explores the effect of the cutting speed, which was varied in a wide range (2–14 m/s), on machinability of age hardened Inconel 718 with PCBN tools. Performance of binderless PCBN grade and grade with low-cBN content was evaluated in terms of tool life, tool wear, cutting forces and surface quality. Chip formation and process dynamics were analyzed as well. It was found that low-cBN grade provided 70–90% better surface finish and tool life than the binderless at moderate speeds (5–8 m/s). Performance of both grades at low and high speed ranges was non-satisfactory due to notching and flaking respectively. At low cutting speed adhesive wear plays a major role while as the speed increases a chemical wear becomes dominant.     

Structure,magnetic and magnetocaloric properties of RE11Ge8In2 (RE = Gd–Tm)

A new tetragonal Gd₁₁Ge₈In₂ phase has been obtained by arc-melting and annealing at 800 °C. The structure has been determined and refined from single crystal X-ray diffraction data in the I4/mmm space group with a = 11.2091(6) and c = 16.3994(9) Å. Phases with the RE₁₁Ge₈In₂ (RE = Gd–Tm) composition were subsequently synthesized and their structures were refined using X-ray powder diffraction methods. Magnetic measurements carried out on RE₁₁Ge₈In₂ (RE = Gd–Tm) indicated a ferromagnetic ordering in all phases. The magnetocaloric effect in terms of the magnetic entropy change, ΔS_mag, was evaluated for the Gd-, Tb- and Tm-containing samples, and the largest |ΔS_mag| value of 10.6 J/kg K was obtained for Tm₁₁Ge₈In₂.     

Semiconducting properties of thin films with embedded nanoparticles

We demonstrate here the possibility of designing semiconducting thin films with controlled electrochemical properties. The thin films are composed of (i) an insulating binder and (ii) a semiconductor nanopowder which enables the fine tuning of the semiconducting properties of the layers. Thus, p- and n-type silicon particles (obtained from a top-down technique), or metal-oxide ZnO, SnO2 and NiO nanoparticles (synthesized using a bottom-up protocol) are successfully integrated into spin-coated or screen-printed thin films and used as semiconducting materials. The flat band potential (Vfb) of the films is then easily tuned from 0 V to ?1.138 V.     

A versatile approach to develop porous hydrogels with a regular pore distribution and investigation of their physicomechanical properties

Porous polyacrylamide (PAAm) hydrogels with enhanced mechanical properties and regular pore distribution have been synthesized by a unique and facile methodology, which involves formation of the hydrogel pores by leaching out chemically modified silica particles. To improve the pore distribution and mechanical properties of the hydrogel network, porogen particles have been modified with PAAm chains chemically attached to the silica surface. Grafting polymerization initiated by peroxide groups immobilized on the particle surface has been used for this modification. The grafted PAAm layer on the silica surface improves the dispersibility of the porogen material in the hydrogel composition, and simultaneously forms pore “walls” reinforcing the hydrogel network, after leaching out the silica particles. The proposed synthetic way for the development of porous hydrogels includes three steps: (i) tethering of PAAm chains to silica particles due to the grafting polymerization initiated by an adsorbed polyperoxide macroinitiator (PPM), (ii) simultaneous crosslinking of grafted PAAm chains and PAAm forming hydrogel network, and (iii) pore formation by leaching out silica particles in the presence of hydrofluoric acid. The PPM has been synthesized by a free radical copolymerization of the peroxide monomer (PM) N‐(tert‐butylperoxymethyl)acrylamide with acrylamide. Both PM and PPM have been developed in our lab, and applied for the synthesis of porous polymeric hydrogels. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

Novel Approach for the Synthesis of Chlorophosphazene Cycles with a Defined Size via Controlled Cyclization of Linear Oligodichlorophosphazenes [Cl(PCl2=N)n–PCl3]+[PCl6]−

Despite a significant number of investigations in the field of phosphazene chemistry, the formation mechanism of this class of cyclic compounds is still poorly studied. At the same time, a thorough understanding of this process is necessary, both for the direct production of phosphazene rings of a given size and for the controlled cyclization reaction when it is secondary and undesirable. We synthesized a series of short linear phosphazene oligomers with the general formula Cl[PCl2=N]n–PCl₃⁺PCl₆^– and studied their tendency to form cyclic structures under the influence of elevated temperatures or in the presence of nitrogen-containing agents, such as hexamethyldisilazane (HMDS) or ammonium chloride. It was established that linear oligophosphazenes are inert when heated in the absence of the mentioned cyclization agents, and the formation of cyclic products occurs only when these agents are involved in the process. The ability to obtain the desired size phosphazene cycle from corresponding linear chains is shown for the first time. Known obstacles, such as side interaction with the PCl₆^– counterion and a tendency of longer chains to undergo crosslinking elongation instead of cyclization are still relevant, and ways to overcome them are being discussed.     

Possibility of graphene growth by close space sublimation

Carbon films on the Si/SiO₂ substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the course of manufacturing process. The XPS survey spectra of the as-prepared samples indicate that the main elements in the near-surface region are carbon, silicon, and oxygen. The narrow-scan spectra of C1s, Si2p, O1s regions indicate that silicon and oxygen are mainly in the SiO _x (x ≈ 2) oxide form, whereas the main component of C1s spectrum at 284.4 eV comes from the sp²-hybridized carbon phase. Micro-Raman spectra confirmed the formation of graphene films with the number of layers that depended on the distance between the graphite source and substrate.