A classification of multiple-source feedback filters

A family of two-amplifier active-RC filters having a single positive and/or negative-feedback path is identified and evaluated. Four distinct categories emerge with respect to the input summing-amplifier arrangement. These are embedded in buffered, differential and allpass-pair networks to reveal many familiar and new configurations. the selectivity and sensitivity to gain-bandwidth product are then presented in general expressions capable of describing the performance of all such circuits. Conditions for zero first-order sensitivities and tuning flexibility are then developed.     

Modeling flow in naturally fractured reservoirs: effect of fracture aperture distribution on dominant sub-network for flow

Fracture network connectivity and aperture(or conductivity) distribution are two crucial features controlling flow behavior of naturally fractured reservoirs. The effect of connectivity on flow properties is well documented. In this paper, however, we focus here on the influence of fracture aperture distribution. We model a twodimensional fractured reservoir in which the matrix is impermeable and the fractures are well connected. The fractures obey a power-law length distribution, as observed in natural fracture networks. For the aperture distribution,since the information from subsurface fracture networks is limited, we test a number of cases: log-normal distributions(from narrow to broad), power-law distributions(from narrow to broad), and one case where the aperture is proportional to the fracture length. We find that even a wellconnected fracture network can behave like a much sparser network when the aperture distribution is broad enough(ɑ≤ 2 for power-law aperture distributions and σ≥ 0.4for log-normal aperture distributions). Specifically, most fractures can be eliminated leaving the remaining dominant sub-network with 90% of the permeability of the original fracture network. We determine how broad the aperture distribution must be to approach this behavior and the dependence of the dominant sub-network on the parameters of the aperture distribution. We also explore whether one can identify the dominant sub-network without doing flow calculations.     

Hall effect characterization of LPE HgCdTe P/n heterojunctions

The field and temperature dependence of the Hall coefficient has been used to simultaneously extract information about the p and n layers in very long wave length infrared P/n HgCdTe heterojunctions. The field dependence allows the effects of high mobility electrons to be separated from those of low mobility holes. The higher the magnetic field, the higher the sensitivity to the parameters of the P layer. For a maximum magnetic field of 8000 gauss, the hole sheet concentration must be at least five times the electron sheet concentration to obtain accurate results for the P layer. This criterion is satisfied for typical liquid phase epitaxy (LPE) heterostructures. The analysis determines the hole sheet resistance (concentration times mobility), rather than the hole concentration or mobility separately. Independent knowledge of the P layer thickness and the relationship between hole concentration and resistivity are needed to convert the Hall measurement results to hole concentrations. Analysis of the field-dependent Hall data is complicated by the finding that at least three electrons of different mobilities are needed to fit the field dependence of the Hall coefficient in n-type LPE HgCdTe layers. These results are consistent with previous conclusions that electrons with different mobilities are needed to model bulk n-HgCdTe, and with a range of mobilities in the graded composition interface between the LPE layer and CdTe substrate. Consistent results are obtained for the concentrations and mobilities of the three types of electrons in the n-HgCdTe layer with and without the P layer present. N and P type carrier concentrations are also consistent with dopant concentrations measured by secondary ion mass spectroscopy.     

The dissolution mechanism of oxide precipitates in czochralski silicon degenerately doped with boron during high temperature annealing

The morphology of oxide precipitation induced defects in Czochralski silicon degenerately doped with boron and annealed at 800° and 1050°C, respectively, was examined using a transmission electron microscope. After an extended annealing at 800°C, the predominantly observed defects were the oxide precipitate platelets having the {001}-type habit planes and sides parallel to <110> and <112> crystallographic directions. The morphology of the oxide precipitates as derived from the residual oxygen calculation is suggested to be that of a thin octahedral shape. During a subsequent high temperature annealing, the octahedral precipitate platelets became thermodynamically unstable and dissolved. Based upon the defect morphology observed after a 1050°C anneal, it is suggested that the dissolving precipitate introduces a tensile strain into the surrounding silicon lattice. Contrary to precipitate growth, the lattice strain introduced by precipitate dissolution is relieved primarily through mechanisms involving vacancy injection from the precipitate interface and a condensation of excess silicon interstitials via a formation of an interstitial-type dislocation loop.     

Hall and drift mobilities in molecular beam epitaxial grown GaAs

A series of nominally undoped and Si-doped GaAs samples have been grown by molecular beam epitaxy (MBE) with Hall concentrations ranging from 10¹⁵ to 10¹⁹ cm⁻³ and mobilities measured at 77 and 300K by Hall-van der Pauw methods. Drift mobilities were calculated using the variational principle method and Hall scattering factors obtained from a relaxation-time approximation to permit cross-correlation of experimental data with drift or Hall mobilities and actual or Hall electron concentrations. At 77K, both high purity and heavily doped samples are well represented by either drift or Hall values since piezoelectric acoustic phonon scattering and strongly screened ionized impurity scattering hold the Hall factor close to unity in the respective regimes. Between n≊10¹⁵ and 10¹⁷ cm⁻³, where lightly screened ionized impority scattering predominates, Hall mobility overestimates drift mobility by up to 50 percent and Hall concentration similarly underestimates n. At 300K, polar optical phonons limit mobility and a Hall factor up to 1.4 is found in the lowest doped material, falling close to unity above about 10¹⁶ cm⁻³. Our calculation also agrees remarkably well with the Hall mobility of the highest purity MBE grown sample reported to date.     

Model for the oxygenation of the YBa2Cu3O7−x 90K superconductor

A model incorporating the thermodynamic equilibrium oxygen content, oxygen in-diffusion, and oxide phases for the oxygenation of the YBa₂Cu₃O_7−x is described. For sintered polycrystals, grain growth and the resulting grain size distribution are included. The model is used to calculate the volume percent of each oxide phase for several processing conditions of sintered specimens and is compared with available results on the quantification of phases present. Such a comparison indicates that as the concentration of impurity phases increases so does the concentration of the less oxygenated 123 phases, suggesting that impurities coating 123 grains act as oxygen indiffusion barriers. The model is also used to investigate the uniformity of the oxygen content in large twinned and detwinned single crystals such as have been used for measuring superconductivity parameters.     

Microstructure and associated properties of YBCO superconductors prepared by melt-processing techniques

From the standpoint of applications, melt-processed bulk YBa₂Cu₃O_x (YBCO) superconductors are of considerable interest. In this paper, we studied the microstructure and levitation force of melt-processed YBCO, YBCO plus Y₂BaCuO₅, and YBCO+Pt. Large single-crystal samples, grown by a seeding technique, were also studied. The levitation force was highest in melt-processed samples made by the seeding technique.     

MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.     

Growth method,composition, and defect structure dependence of mercury diffusion in CdxHg1–xTe

Mercury radiotracer diffusion results are presented, in the range 254 to 452°C, for bulk and epitaxial Cd_xHg_1–xTe, and we believe this to be the first report for metalorganic vapor phase epitaxy (MOVPE) grown Cd_xHg_1–xTe. For all growth types studied, with compositions of x_Cd=0.2±0.04, the variation of the lattice diffusion coefficient, D_Hg, with temperature, under saturated mercury partial pressure, obeyed the equation: D_Hg=3×10⁻³ exp(−1.2 eV/kT) cm² s⁻¹. It was found to have a strong composition dependence but was insensitive to changes of substrate material or crystal orientation. Autoradiography was used to show that mercury also exploited defect structure to diffuse rapidly from the surface. Dislocation diffusion analysis is used to model defect tails in MOVPE Cd_xHg_1–xTe profiles.     

Development of a piezopolymer pressure sensor for a portable fetalheart rate monitor

A piezopolymer pressure sensor has been developed for service in a portable fetal heart rate monitor, which will permit an expectant mother to perform the fetal nonstress test, a standard predelivery test, in her home. Several sensors are mounted in an array on a belt worn by the mother. The sensor design conforms to the distinctive features of the fetal heart tone, namely, the acoustic signature, frequency spectrum, signal amplitude, and localization. The components of a sensor serve to fulfill five functions: signal detection, acceleration cancellation, acoustical isolation, electrical shielding, and electrical isolation of the mother. A theoretical analysis of the sensor response yields a numerical value for the sensor sensitivity, which is compared to experiment in an in vitro sensor calibration. Finally, an in vivo test on patients within the last six weeks of term reveals that nonstress test recordings from the acoustic monitor compare well with those obtained from conventional ultrasound