Tomsk complex for neutron-transmutation doping of silicon

All-Union Scientific-Research Institute of Nuclear Physics at the S. M. Kirov Tomsk Polytechnical University. Translated from Atomnaya énergiya, Vol. 79, No. 1, pp. 38–40, July, 1995.     

A microprocessor-based toggle-control lighting system

Analysis, design, practical consideration, and implementation of a microprocessor-based toggle-control lighting system are presented. The system is primarily configured with a power factor corrector (PFC), a square-wave voltage generator, a manually controlled toggle switch, and two relays. Toggling the toggle switch can select a different number of lamps in operation, resulting in a mutual dimming feature. A fluorescent lamp lighting system with this specific ballast gains the merits of lower system cost and more flexibilities in lighting fixture design, as compared to conventional systems     

Kinetic model of block photopolymerization of glycidyl methacrylate to high conversion

The kinetics of glycidyl methacrylate block polymerization to high conversion was experimentally investigated with variations of the photoinitiator concentration, temperature, and power of UV illumination. The kinetic curves of this polymerization process contain three characterized sections of coordinates of “conversion–time,” namely: The first one is practically linear to a conversion of ≈0.5, the second represents, by itself, the autoacceleration process, and the third presents the autodecelation process. An additional peculiarity of such a polymerization process is poor reproduction of the kinetic measurements. This reproduction does not correspond to instrumental error. Derivation of a kinetic model for block linear polymerization was done. This model is, quantitatively, in good agreement with all the data of the experimental material. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 3556–3569, 2002     

Enhancement of heat and mass transfer in a plane channel with turbulizers on one of the walls

The effect of turbulizing asperities positioned on one of the walls of a plane channel on the intensity of exchange processes near a smooth wall with injection of different working media is studied experimentally. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 70, No. 3, pp. 404–408, 1997.     

超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。