Hydrogen Permeation and Diffusion in Amorphous Alloy Ni_(68)Cr7_Si_8B_(14)Fe_3 at Elevated Temperature

The behaviour of hydrogen permeation and diffusion in amorphous alloy Ni68Cr7Si8B14Fe3 hasbeen investigated by an ultrahigh vacuum gas permeation technique. A comparison experimentwas carried out between the as-quenched and annealed States (400℃/2h) of the amorphousalloy. The results show that, for both states of the amorphous alloy in the temperature rangeof 200～350℃, the diffusivity and permeability of hydrogen are in agreement with Arrheniusrelationship, there does not exist H-trapping effect, and the activation energies of diffusion andpermeation almost keep the same.     

智能工作站主机的MMPIS实验模型研究──一个全互连式结构MMPIS硬件环境的设计与实现

本文介绍中日国际合作开发研究的Ａ１型智能网（Ａ１型ＩＮ）智能工作站（ＩＷ）主机的并行推理硬件结构的实验模型设计与实现，给出了一种并行推理硬件支持环境实现方案和该方案在实现中若干问题的解决方法。     

电子聚合物基体碳纳米管复合材料研究进展

电子聚合物是一种新型的功能材料，碳纳米管具有优异的力学性能和独特的电学性能等，是聚合物基体复合材料的理想增强体，按不同电子聚合物基体类型进行了归纳，评述了电子聚合物基体碳纳米管复合材料的制备，性能和应用等情况。     

钠冷快堆中喷雾钠火的计算分析

根据钠冷快堆中喷雾钠火的特点建立了理论模型，编制了SSPRAY程序。该程序模拟钠喷雾燃料过程中钠滴的运动、钠和氧气的燃烧反应、热量传递和质量传递等瞬态过程。用该程序计算了气体和墙壁温度、气体压力、氧气摩尔份额、喷雾流燃烧速率和热量热递速率等主要参数。利用AI实验数据和美国SPRAY－3A的计算结果对程序进行了验证，结果符合较好。     

电沉积Ni-W合金镀层的X射线光电子能谱分析

采用X射线光电子能谱（XPS）对电沉积Ni-W合金镀层表面膜进行了分析。研究结果表明，Ni-W合金镀层表面存在一层薄的氧化膜，而钨的氧化作用远大于镍，Ni-W合金镀层中W含量的提高对耐蚀性起决定作用。     

磨损自补偿添加剂在成品油中的摩擦学效应

利用四球试验机考察了二聚酸－3－氯－2－羟基丙单酯（DAE）在4种成品油中的摩擦学性能。试验结果表明，DAE添加剂在L－HM68液压油和L－DAB100空压机油中具有良好的适应性，使其承载能力增强，摩擦系数降低及耐磨性增强；DAE在L－CKE涡轮蜗杆油中使耐磨性增强；DAE在L－CKC150齿轮油中虽使承载能力提高，减磨性增强，但有使耐磨性减小的趋势，说明DAE在不同的油中有不同的性能。     

非线性系统鲁棒吸引的动态补偿方法

考虑非线性不确定系统的鲁棒吸引问题,借助于动态输出反馈,构造了两类控制律。这两类控制律分别可使相应的闭环系统被一任意小的区域鲁棒吸引,或被一预先设置的区域有限吸引。     

Clinical study on effect of bushen shengxue paste in treating renal anemia patients

OBJECTIVE: To evaluate the therapeutical mechanism of Bushen Shengxue Paste (BSSXP) on anemia. METHODS: Chronic renal failure induced anemia patients were treated with BSSXP, clinical manifestation, anemia and renal function as indicators were observed in patients. The erythropoietin (EPO) and inhibition of colony-forming unit-erythrocyte (CFU-E) in patients' serum were determined by CFU-E in vitro. RESULTS: The patients' symptoms, renal function and anemia were improved after administration with BSSXP 1-2 course. EPO in serum was slightly increased. The inhibition of CFU-E in patient's serum was significantly decreased. CONCLUSIONS: BSSXP could improve the anemia degree, its mechanism might be through clearing the inhibitor of CFU-E in serum.     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

Alkali-metal Na Adsorption and Promoted Oxidation on Si(100)2×1 Surface

The alkali-metal Na adsorption on Si(100)2×1 surface and its promoted oxidation and Si oxidegrowth have been investigated by means of thermal desorption,work function,Auger electronspectroscopy and photoemission electron spectroscopy.The experimental data showed that therewas a new state,interface electron state,near the Fermi level after the deposition of Na atoms.It wasfound that the presence of Na always caused an increase of the oxygen initial uptake whereas thepromotion of Si oxide growth was observed only at the coverage of Na greater than 0.5 ML.A newmechanism of Na-promoted Si oxide growth is suggested in this paper.