Effects of Cooling Rate and Component on the Microstructure and Mechanical Properties of Mg–Zn–Y Alloys

The microstructure and mechanical properties of Mg–6Zn–1Y and Mg–6Zn–3Y(wt%) alloys under different cooling rates were investigated. The results show that the second dendrite arm spacing(SDAS) of Mg–6Zn–1Y and Mg–6Zn–3Y is reduced by 32 and 30% with increasing cooling rates(Rc) from 10.2 to 23 K/s, which can be predicted using a empirical model of SDAS=68 R 0:45:45cand SDAS=73 R 0c, respectively. The compressive strength of both alloys increases with increasing the cooling rate, which is attributed to the increase of volume fraction(Vf) of secondary phases under high cooling rate. The interaction of the cooling rate and component with SDAS has been theoretically analyzed using interdependence theory.     

An airlight estimation method for image dehazing based on gray projection

Multimedia Tools and Applications - As the key parameter of dehazing algorithms, airlight value directly affect the calculation accuracy of sky region, and any deviation will lead to the chromatic...     

Microwave dielectric properties of ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at low temperature by LiF addition

In this work, ultra-low loss Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics were successfully prepared via the conventional solid-state method. X-ray photoelectron spectroscopy (XPS), thermally stimulated depolarization current (TSDC) and bond energy were used to determine the distinction between intrinsic and extrinsic dielectric loss in (Mg_1/3Nb_2/3)⁴⁺ ions substituted ceramics. The addition of (Mg_1/3Nb_2/3)⁴⁺ ions enhances the bond energy in unit cell without changing the crystal structure of Li₂MgTiO₄, which results in high Q·f value as an intrinsic factor. The extrinsic factors such as porosity and grain size influence the dielectric loss at lower sintering temperature, while the oxygen vacancies play dominant role when the ceramics densified at 1400?°C. The Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r =?16.19, Q·f?=?160,000?GHz and τ_f =??3.14?ppm/°C. In addition, a certain amount of LiF can effectively lower the sintering temperature of the matrix, and the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄-3?wt% LiF ceramics sintered at 1100?°C possess balanced properties with ε_r?=?16.32, Q·f?=?145,384?GHz and τ_f =??16.33?ppm/°C.     

改善硫精矿浓密机溢流跑浑试验研究

本文旨在改善某选厂硫精矿浓密机溢流跑浑问题,对生产现场进行勘察和分析,分析浓密机溢流跑浑的原因,并开展原矿配比和沉降试验研究。对采场原矿矿样和硫精矿矿浆进行系统的试验研究,分别采用不同沉降方案进行条件试验,考察絮凝剂种类、絮凝剂用量、pH调整剂用量、不同药剂之间的配比等条件对沉降的影响,确定合适的原矿配比及合理药剂制度,有效地控制金属在溢流中的损失,充分获取现有产品的蕴含价值。     

Structural,morphological, dielectric and magnetic properties of Zn-Zr co-doping yttrium iron garnet

In this study, yttrium iron garnet co-doped with Zn and Zr atoms with a chemical formula Y₃Zn_xZr_xFe_(5−2x)O₁₂ (x = 0.0-0.3) has been successfully prepared by the solid-state reaction method. The effects of doping concentration on the microstructure, crystal structure, magnetic properties, and dielectric properties of Y₃Zn_xZr_xFe_(5−2x)O₁₂ were investigated. The microstructure analysis indicates that co-doping of YIG with Zn and Zr can effectively reduce the grain size of the ceramic. The crystal structure results reveal that the doping concentration of Zn–Zr has substantial influence on the lattice parameters of YIG, such as, increases the lattice constant, crystal cell size, and interplanar spacing. However, the second phase of ZrO₂ appears once x ≥ 0.15. Additionally, the dielectric properties of YIG ferrite can be regulated using this Zn–Zr co-doping method. Zn–Zr co-doping can improve the dielectric stability and reduce the dielectric loss at high temperature. The magnetization measurement shows that the saturation magnetization is stabilized at x < 0.15, and the magnetic loss is decreased with the increase in the doping concentration. Overall, the findings show that the ceramic with x = 0.1 exhibits better properties included high saturation magnetization (24.607 emu/g), low magnetic loss (0.0025 @ 1 MHz), and relatively low dielectric loss (496 @ 400°C).