Multiplication fusion of sparse and collaborative representation for robust face recognition

Multimedia Tools and Applications - Sparse representation based classification (SRC) and collaborative representation based classification (CRC) are two well-known methods in representation-based...     

流程工业CIMS中综合优化问题的研究

文章首先提出了流程工业及其CIMS中的各种优化问题;;小结了各种解决优化问题的求解技术.在此基础上提出了一种基于多级优化的一种流程工业CIMS结构.最后;;作者提出了一种解决流程工业CIMS多目标优化问题的最大熵优化技术     

宽带多协议标记交换（MPLS）网络的原理及关键技术

多协议标记交换（MPLS）技术将网络层路由功能和数据链路层交换功能相结合,充分利用第三层和第二层功能,被认为是下一代Internet的基础技术,本文介绍了其基本原理和关键技术。     

安全信息计算机管理系统软件设计及应用

介绍安全信息化监督管理软件的开发,利用计算机网络技术将ORACLE与DELPHI有机地结合起来。     

三相电压型低谐波PWM整流器主电路参数间的关系

三相电压型低谐波PWM整流器主电路的多个参数之间的关系较为复杂，在仿真和实验中，若给出的参数不合理，则变换器不能正常工作，从而给仿真和实验带来一定困难。文章在考虑了输入电阻的情况下，给出了功率因数角为任意值时，主电路各参数和控制参数间的稳态关系及一些参数的约束关系。上述关系对于分析和设计被研究电路具有很好的指导意义，文中的公式通过了仿真验证。     

YAKS710-4 6 300kW 6kV高压增安型三相异步电动机的研制

介绍了YAKS710－46300kW 6kV高压增安型三相异步电动机的研制过程、性能指标及防爆安全性等，对该电动机的技术经济性进行了分析，并提出了非防爆型避雷器，电容器在防爆危险区域内应用所采取的措施。     

PC系统的电磁兼容检测及其软、硬件设计

本文叙述了计算机系统的电磁兼容检测技术，并从软、硬件两方面提出了抗干扰措施。     

管理层收购的理论依据及对我国实践的效应分析

管理层收购起源于资本市场相对成熟的英美国家,其理论基础是西方经济学家提出的效率提高论,代表理论有代理成本说、防御剥夺说、信息不对称性假说。文章分析了管理层收购对我国企业的正负影响,由此提出今后我国管理层收购的几点思路。     

Low-temperature synthesis of nanocrystalline ZnGa2O4:Tb phosphors via the Pechini method

The synthesis of trivalent terbium doped ZnGa₂O₄ nanosized new phosphors by the Pechini method was reported. Well-crystallized ZnGa₂O₄:Tb³⁺ phosphors were obtained at low-temperature about 550 °C. The phosphors formed porous agglomerates which consist of spherical nanocrystallites with a uniform size at about 30 nm. The photoluminescence of the phosphors included both the luminescence of ZnGa₂O₄ host and characteristic emission of Tb³⁺, and the excitation spectra showed an energy transfer from the host lattice to the activator. The Tb³⁺ emission from the phosphors prepared by the Pechini process was more intensive than that of phosphors by solid-state reaction process.     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.