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991.
Graphene-based heterostructure composite is a new type of advanced sensing material that includes composites of graphene with noble metals/metal oxides/metal sulfides/polymers and organic ligands. Exerting the synergistic effect of graphene and noble metals/metal oxides/metal sulfides/polymers and organic ligands is a new way to design advanced gas sensors for nitrogen-containing gas species including NH3 and NO2 to solve the problems such as poor stability, high working temperature, poor recovery, and poor selectivity. Different fabrication methods of graphene-based heterostructure composite are extensively studied, enabling massive progress in developing chemiresistive-type sensors for detecting the nitrogen-containing gas species. With the components of noble metals/metal oxides/metal sulfides/polymers and organic ligands which are composited with graphene, each material has its attractive and unique electrical properties. Consequently, the corresponding composite formed with graphene has different sensing characteristics. Furthermore, working ambient gas and response type can affect gas-sensitive characteristic parameters of graphene-based heterostructure composite sensing materials. Moreover, it requires particular attention in studying gas sensing mechanism of graphene-based heterostructure composite sensing materials for nitrogen-containing gas species. This review focuses on related scientific issues such as material synthesis methods, sensing performance, and gas sensing mechanism to discuss the technical challenges and several perspectives.  相似文献   
992.
Hole transport materials (HTMs) play a significant role in device efficiencies and long-term stabilities of perovskite solar cells (PSCs). In this work, two simple dopant-free HTMs are designed with a large conjugated electron-deficient core. On the one hand, a large coplanar backbone endows enhanced π–π stacking and reduced hole hopping distance. On the other hand, the incorporation of electron-deficient unit can easily tune the energy levels as well as increase hole mobilities. Combining these two advantages together, 12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro[1,2,5]thiadiazole[3,4-e]thieno[2″,3″:4,5]thieno[2′,3′:4,5]pyrrolo[3,2-g]thieno[2′,3′:4,5]thieno[3,2-b]indole is chosen as the large electron-deficient core to construct two novel dopant-free HTMs, Y6-T and Y-T. Both Y6-T and Y-T behave suitable highest occupied molecular orbital levels, good hole mobilities, as well as strong hydrophobicities. After careful device optimization with a passivation agent, Y-T delivers an impressive power conversion efficiency of 20.29%, which is higher than that of Y6-T (18.82%) and doped spiro-OMeTAD (19.24%). Moreover, PSCs based on Y6-T and Y-T show much better long-term stabilities than spiro-OMeTAD due to the intrinsic hydrophobicity. Therefore, this work provides a promising candidate as well as a useful design strategy for exploring dopant-free HTMs, which may pave the way for the commercialization of PSCs.  相似文献   
993.
前视阵高速雷达空时处理方法研究   总被引:1,自引:0,他引:1  
多普勒严重模糊,训练样本有限是高速平台雷达面临的重要问题,协方差矩阵估计误差以及目标约束误差将使处理器性能严重下降。针对上述问题,该文对前视阵杂波自由度进行了研究,分析表明杂波特征谱与孔径带宽积、时宽带宽积以及空时耦合特性有关。该文提出基于主瓣区域空时多波束的鲁棒空时处理方法,首先通过空时多波束降低杂波自由度,然后利用多普勒区间约束的方法,提高了处理器的性能和系统鲁棒性。仿真实验证明了该文方法的有效性,当样本中存在目标信号时,该文方法相比传统固定约束矢量的方法输出信杂噪比性能平均提高5 dB左右。  相似文献   
994.
We report on a study seeking an optimized contact configuration for organic transistors that minimizes contact effects but maintains smallest contact size. We begin with the bulk access resistance in staggered transistors which results from the charge transport through the organic semiconductor film. Bulk access resistance is an intrinsic contributor to the contact resistance which has been little understood due to lack of a reliable study tool. In this work, we utilize the inner transported power inside the semiconductor film as a medium to investigate the contact resistance and the relevant contact effects. We examine the influences of the organic film thickness (tSC), the channel length (L), the underlying charge transport and various organic semiconductor materials with variable carrier mobility. A roughly optimal contact length (LC) of LC0  6tSC is obtained. The results reveal that besides the device architecture the underlying charge transport should be also taken into account in designing organic transistors for practical application.  相似文献   
995.
This study investigated the use of a novel modification in molecular design to get two new electron-transport host materials, SF3PO and BSF3PO. By linking the phosphine oxide moieties at meta-position of spirobifluorene rings, higher triplet energies could be easily achieved for these two new materials. The steric spirobifluorene structures could guarantee their good thermal stabilities. According to these properties, their applications as host materials for deep blue phosphorescent organic light-emitting diodes (PHOLEDs) were explored. As expected, the deep blue emitting devices with Ir-complex FIr6 as phosphorescent dopants and SF3PO and BSF3PO as hosts had been fabricated and showed high efficiency of 28.5 and 22.0 cd/A, respectively, which were significantly higher than that of the para-linked analogue SPPO1.  相似文献   
996.
Using thinner wafers can largely reduce the cost of silicon solar cells. One obstacle of using thinner wafers is that few methods can provide good dopant concentration for the back surface field (BSF) and good ohmic contact while generated only in low bowing. In this paper, we have demonstrated the screening–printing B and Al (B/Al) mixture metallization film technique, making use of the screen‐printing technique and the higher solubility of B in silicon to form a B/Al‐BSF. This technique can raise the carrier concentration in the BSF by more than one order of magnitude and reduce the back surface recombination at a low firing temperature (≤800 °C). We have also shown that through the new technique, the metallization paste thickness at the rear could be reduced largely, which however did not degrade the solar cell efficiency. All these efforts are aiming for pushing forward the application of thinner wafers. Copyright © 2011 John Wiley & Sons, Ltd.  相似文献   
997.
An all‐Si tandem solar cell has the potential to achieve high conversion efficiency at low cost. However, the selection and synthesis of candidate material remain challenging. In this work, we show that the conventional ‘Si quantum dots (Si QDs) in SiO2 matrix’ approach can lead to the formation of over‐sized Si nanocrystals especially when doped with phosphorous, making the size‐dependent quantum confinement less effective. Also, our investigation has shown that the high resistivity of this material has become the performance bottleneck of the solar cell. To resolve these matters, we propose a new design based on Si QDs embedded in a SiO2/Si3N4 hybrid matrix. By replacing the SiO2 tunnel barriers by the Si3N4 layers, the new material manages to constrain the growth of doped Si QDs effectively and enhances the apparent band gap, as shown in X‐ray diffraction, Raman, photoluminescence and optical spectroscopic measurements. Besides, electrical characterisation on Si QD/c‐Si heterointerface test structures indicates the new material possesses improved vertical carrier transport properties. Copyright © 2011 John Wiley & Sons, Ltd.  相似文献   
998.
介绍了基于云计算的数据库产品的架构,针对云计算数据库在电信企业业务类型负载下的表现,重点分析了云计算数据库的测试技术标准,详细阐述了云计算数据库处理能力的衡量和评估方法。  相似文献   
999.
生物组织电导率CMIT平面螺旋激励线圈的分析   总被引:3,自引:0,他引:3  
计算了平面矩形螺旋线圈的电感值,结果与近似公式计算得出的电感值吻合。另外,通过理论计算发现,矩形平面螺旋线圈产生的磁场具有聚焦的特性,并计算和讨论了分层生物组织的电导率对电感的影响,认为用矩形平面螺旋线圈来做生物组织非接触的电导率成像的激励线圈是可行的。  相似文献   
1000.
基于LabVIEW平台的通用数据采集卡的驱动方法及数据采集   总被引:4,自引:0,他引:4  
李威宣  黄建新 《电子质量》2005,(7):14-16,13
介绍了非NI公司的数据采集卡的三种驱动方式:I/0方式;CIN方式;CLF方式.利用CLF驱动方式对PCI-1802L数据采集卡进行了双通道连续数据采集系统的设计,实践表明,LabVIEW具有良好的开放性,在该平台下不仅能方便的使用NI数据采集卡,也能灵活地使用非NI数据采集卡采集数据,这是LabVIEW与其它测试软件相比的特色之一.  相似文献   
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