激光光束质量因子M~2的物理概念与测试方法

激光光束传输质量因子Ｍ２是一种全新的描述激光光束质量的参数，它能定量表征单模、多模光束传播特性。本文介绍Ｍ２的物理概念、特点、测试方法及近年来国外的研究概况。     

3mm波段极近距离雷达

提出一种极近距离雷达概念，并导出其作用距离公式，在此基础上研制出一台３ｍｍ波段极近距离多普勒雷达样机．试验结果表明该雷达结构简单，成本低廉，在作用距离为零点几米至几米范围内可获得较高的定距精度．     

中波同步广播的回顾及同步技术的探讨

本文回顾了实施中波同步广播的经历，分析了目前运行中的同步网所存在的问题。笔者根据１０余年参与同步广播运行管理，科研的体会，论述了实施良好同步广播的措施。就同步广播的发展：标频传送，同步激励的性及同步网的管理三个关键方面的，提出了探讨性的建议和意见。     

~（60）Co辐照对聚四氟乙烯表面润湿性的影响

研究了具有低表面能的氟聚合物聚四氟乙烯（ＰＴＦＥ），经６０Ｃｏγ射线辐照后表面状态的变化，以及其对液体介质蒸馏水的润湿性。较详细地论述了辐照后表面粗糙度、结晶度以及表面化学基因等不同因素对ＰＴＦＥ表面润湿性的影响。通过对ＰＴＦＥ及其表面的红外、Ｘ光衍射，表面粗糙度的分析，弄清了辐照后ＰＴＦＥ表面化学基团的改变对有机氟聚合物表加的润湿性影响很大，而粗糙度和结晶度的变化对润湿性影响较小。     

交流变频调速技术在二辊轧机压下系统中的应用

介绍一种采用变频调速技术控制的二辊轧机压下系统。该系统可控制轧机压下系统的速度在工艺要求的范围内无级可调，压下量以数字动态显示，控制准确、操作方便。文中对系统的组成及工作原理作了较详细的介绍。     

CVD金刚石工具膜生长特征SEM观察

本文用不热形变栅状直丝化学气相沉积（ＣＶＤ）法生长金刚石膜，在Ｓｉ及ＷＣ－Ｃｏ硬质合金衬底上金刚石膜晶面显露规律随衬底温度和甲烷浓度而异，经适当表面处理及选择合适的工艺条件，当生长初期衬底上就呈现出良好晶形的沉积膜，衬底与膜之间的粘结力能得到提高。Ｒａｍａｎ谱分析表明此膜仅具有特征金刚石１３３２ｃｍ￣（－１）峰，通过ＳＥＭ观察揭示出盒刚石膜可在表面、侧面及棱上生长，并与衬底有良好的联结。     

Cu－Zn－Al合金中贝氏体的有序性

本文用Ｘ射线研究了Ｃｕ－２０Ｚｎ－６Ａｌ（ｗｔ％）合金中贝氏体结构的有序性，并与马氏体结构进行了比较，实验表明，从高温Ｂ２母相和低温Ｌ２１母相生成的贝氏体中（１１５）和（２０５）衍射峰或（１２１０）和（２０１０）衍射峰是重叠的，对生成的贝氏体进行一段时间的保温或缓慢冷却处理，其衍射峰的特征并不改变，这与马氏体（１１５）和（２０５）衍射峰或（１２１０）和（２０１０）衍射峰的分离特性不相符合。说明贝氏体结构有序度与马氏体明显不同，它的形成不可能继承母相的有序度。     

Coincident indices of exons and introns

In this paper, the coincident index, proposed by W. F. Friedman in cryptology, is made use of in DNA sequence analysis and exon prediction. The coincident index of exons exceeds that of introns by many times, and is mainly affected by window length, which is correlated negatively with the coincident index. An optimal exon prediction scheme was obtained by experimental analysis with an orthogonal table. Besides exons, many other special sites such as tandem repeats can be identified by using the coincident index approach. The application of this approach to the ARV-2 (AIDS associated retrovirus 2) genome found three new possible coding regions and some unusual base composition regions which are probably related to definite biological functions.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.