装备动员物资供应企业选择双层规划模型

针对装备动员物资非恒定消耗的现实,以实现物资供应企业数量最小、动员生产开始时间最早为优化目标,构建了物资供应企业选择双层规划模型。给出装备动员物资供应企业双层规划模型算法的具体步骤,并以实例对结果进行比较、分析。结果表明,该模型可选择最少供应企业完成物资调度任务,实现装备动员的快速响应和经济性目标。     

广州某建筑的玻璃幕墙节能改造措施及其经济性分析

以广州某典型的玻璃幕墙建筑——某高校图书馆为研究对象,针对其夏季供冷能耗高的现状,利用建筑能耗模拟分析软件DeST-c,通过构建合理的建筑模型,分析其能耗大的原因;提出3种节能改造方案,对其节能潜力和经济性进行了计算分析。研究结果可为夏热冬暖地区玻璃幕墙建筑的节能改造提供参考。     

网络负载均衡技术对HRPD网络的性能提升

HRPD智能网络的关键技术之一——网络负载均衡(NLB)技术,能解决现网所存在的负载不均衡问题,有效地提升网络性能,改善用户体验.通过将网络负载均衡技术应用到现网环境下,评估该技术在现网的应用效果,重点分析开启网络负载均衡技术后,现网重负载扇区的容量增益及用户体验增益情况.分析结果表明,网络负载均衡技术能有效降低重负载扇区的负荷量,为网络带来一定的容量增益和用户体验增益.     

提高对抗复合末制导的质心干扰方案研究

质心干扰是水面舰艇抗击来袭导弹的一种有效手段。随着现代导弹技术的发展,末制导方式已趋于多样化,这对传统质心干扰作战使用提出了严峻的挑战。针对这一问题,在对新型反舰导弹末制导方式及其特点分析的基础上,叙述了传统质心干扰方式在对抗复合末制导过程中存在的不足,提出了一种能够有效对多制导方式进行干扰的质心干扰方案。并对此方案进行了定量和定性分析,建立了干扰空域和时域效能的数学模型,对干扰效果进行了仿真和评估。最后给出此干扰方案在作战使用中的几点建议和思考。     

High-sensitivity temperature sensor based on long-period fiber grating

Temperature sensitivity is greatly improved by taking the following three measures： proper long-period fiber grating （LPFG） whose strain coefficient of the core is larger than that of the cladding is employed, the LPFG is coated with a thin film of the material whose refractive index decreases with the temperature, and the sensor is encapsulated by metal material whose thermal expansion coefficient is large. By computer simulation, a measured temperature coefficient of 0.2375 nm/℃ and a temperature resolution less than 0.1 ℃ are obtained.     

GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

A process methodology has been adopted to transfer GaN thin films grown on sapphire substrates to Si substrates using metal bonding and laser lift-off techniques. After bonding, a single KrF (248 nm) excimer laser pulse was directed through the transparent sapphire substrates followed by low-temperature heat treatment to remove the substrates. The influence of bonding temperature and energy density of the excimer laser on the structure and optical properties of GaN films were investigated systemically. Atomic force microscopy, X-ray diffraction and photolumi-nescence measurements showed that (1) the quality of the GaN film was higher at a lower bonding temperature and lower energy density; (2) the threshold of the energy density of the excimer laser lift-off GaN was 300 mJ/cm~2. The root-mean-square roughness of the transferred GaN surface was about 50 nm at a bonding temperature of 400 ℃.     

MOCVD于高温AlN模板上生长的AlGaN材料

A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spectrum and high resolution X-ray diffraction（XRD）characterization both proved the high quality of the AlN template.The XRD（002）rocking curve full width at half maximum（FWHM）was about 53.7 arcsec and（102）FWHM was about 625 arcsec.The densities of screw threading dislocations（TDs）and edge TDs wereestimated to be - 6 × 10^6 cm^-2 and - 4.7 ×10^9 cm^-2. AlGaN of Al composition 80.2% was further grown on the AlN template. The RMS of the surface roughness was about 0.51 nm. XRD reciprocal space mapping was carried out to accurately determine the Al composition and relaxation status in the AlGaN epilayer. The XRD （002） rocking curve FWHM of the AIGaN epilayer was about 140 arcsec and （102） FWHM was about 537 arcsec. The density of screw TDs was estimated to be - 4 × 10^7 cm^-2 and that of edge TDs was - 3.3 × 10^9 cm^-2. These values all prove the high quality of the AlN template and AlGaN epilayer.     

基于TDLAS的长光程环境大气痕量CO监测方法研究

CO作为大气中重要的污染物和煤矿、油田等环境的危险气体,CO浓度的实时监测对生产生活安全具有重要意义。筛选出CO位于2334 nm附近的R(6)吸收谱线,搭建了基于可调谐半导体激光吸收光谱技术的长光程开放光路大气CO监测系统。采用直接吸收技术,吸收光程为700 m,借助离轴抛物面镜实现了收发同光路;低功耗、小型化的测量控制系统,在单块电路板上实现了激光器驱动、光谱信号处理等功能,单板体积为120 mm×100 mm×25 mm,功耗小于5 W。上位机对光谱数据进行多峰拟合处理,分离出CO和CH4的吸收光谱,反演CO浓度。通过分析光谱数据标准差可知,在1 s响应时间下的检测限为0.06×10-6。对大气中的CO浓度进行了连续监测,测量结果和CO点式分析仪结果一致性良好,验证了该系统仪器化的可行性。     

透明导电GZO薄膜电学和光学性能的研究进展

ZnO因其价格便宜、无毒等优点,最有希望替代昂贵的掺锡氧化铟ITO,但未掺杂ZnO是高阻材料,如何提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。其中,Ga掺杂是提高ZnO性能的一种有效手段。从制备方法、掺杂浓度、生长条件等方面综述了Ga掺杂ZnO(GZO)薄膜光电性能的研究进展,归纳总结后发现:适当增加掺杂量、提高衬底温度等都有利于薄膜光学和电学性能的提高。目前,GZO薄膜电阻率最低可达10-3～10-4Ω.cm,透光率一般可达80%以上,光电性能可以满足透明导电膜的要求,但其性能的稳定性还不如广泛使用的ITO。因此,GZO薄膜要达到实际应用要求,尚需进一步优化工艺,提高其性能的稳定性。