Piezoelectrically actuated tunable capacitor

This paper describes the design, fabrication, and characterization of the first MEMS piezoelectric tunable capacitors employing zinc oxide (ZnO) actuation. Relatively simple design rules for the device-structure optimization for largest deflection are shown from simulation results based on theoretical equations. The ZnO-actuated tunable capacitors are accordingly designed and fabricated with both surface and bulk micromachining techniques. Through the surface micromachining process, sacrificial silicon is removed with XeF/sub 2/, and parylene is successfully used as a supporting layer for a piezoelectric unimorph cantilever. For comparison, other two different structures using plasma-enhanced chemical-vapor deposition (PECVD) SiN and SU-8 as supporting layers are also fabricated. Deflection analyses are performed for three specific structures, among which the parylene-supported one is demonstrated to have the largest displacement and most suitable for tunable capacitor application. For bulk-micromachined tunable capacitor, we have implemented a novel design of a large structure driven by a ZnO unimorph, and obtained a tuning ratio of more than 21:1 (0.46 pF-10.02 pF). This is the highest tuning ratio reported to date for parallel-plate tunable capacitors while requiring an applied voltage of only 35 V.     

International Working Group on Assurance Cases (for Security)

Critical systems are aptly named - from electric power to water and gas to the telephone system and the Internet, they're all critical to some aspect of our daily lives. We're a networked society and as such, it's important to both know whether critical systems are trustworthy and be able to communicate, review, and debate the level of trust achieved in them. In the safety domain, explicit safety cases are increasingly required by law, regulations, and standards. In this article, we outline what a small, international group of experts, spanning various disciplines in safety, security, reliability, and critical infrastructure, been doing with the International Working Group on Assurance Cases (for Security), what we hope to achieve, and where we go next.     

Performance engineering and topological design of metro WDM opticalnetworks using computer simulation

This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures     

Multicast routing and bandwidth dimensioning in overlay networks

Multicast services can be provided either as a basic network service or as an application-layer service. Higher level multicast implementations often provide more sophisticated features and can provide multicast services at places where no network layer support is available. Overlay multicast networks offer an intermediate option, potentially combining the flexibility and advanced features of application layer multicast with the greater efficiency of network layer multicast. In this paper, we introduce the multicast routing problem specific to the overlay network environment and the related capacity assignment problem for overlay network planning. Our main contributions are the design of several routing algorithms that optimize the end-to-end delay and the interface bandwidth usage at the multicast service nodes within the overlay network. The interface bandwidth is typically a key resource for an overlay network provider, and needs to be carefully managed in order to maximize the number of users that can be served. Through simulations, we evaluate the performance of these algorithms under various traffic conditions and on various network topologies. The results show that our approach is cost-effective and robust under traffic variations.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

High-bandwidth graded-index polymer optical fiber with high-temperature stability

A newly developed graded-index polymer optical fiber (GI-POF) with high-temperature and high-humidity stability was proposed. As it was found that the high numerical aperture and high glass transition temperature (T/sub g/) at the core center of the GI-POF were key issues to achieve both high-temperature and humidity stability, a partially fluorinated polymer material was adopted to obtain both characteristics in the GI-POF. The newly developed GI-POF had low-loss (140 dB/km at 650-nm wavelength), high-bandwidth (higher than 1 GHz for 100 m transmission), high-temperature and humidity stability at 70/spl deg/C, 80% relative humidity (R.H.) and low bending loss.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

Reliability prediction models to support conceptual design

During the early stages of conceptual design, the ability to predict reliability is very limited. Without a prototype to test in a lab environment or without field data, component failure rates and system reliability performance are usually unknown. A popular method for early reliability prediction is to develop a computer model for the system. However, most of these models are extremely specific to an individual system or industry. This paper presents three general procedures (using both simulation and analytic solution techniques) for predicting system reliability and average mission cost. The procedures consider both known and unknown failure rates and component-level and subsystem-level analyzes. The estimates are based on the number of series subsystems and redundant (active or stand-by) components for each subsystem. The result is a set of approaches that engineers can use to predict system reliability early in the system-design process. Software was developed (and is discussed in this paper) that facilitates the application of the simulation-based techniques. For the specific type of system and mission addressed in this paper, the analytic approach is superior to the simulation-based prediction models. However, all three approaches are presented for two reasons: (1) to convey the development process involved with building these prediction tools; and (2) the simulation-based approaches are of greater value as the research is extended to consider more complex systems and scenarios