Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

The electrical properties of structures consisting of a monolayer of 1-octadecene deposited on the Si surface are investigated depending on the method of passivation of the surface prior to the deposition of the film (hydrogen and ion passivation) and the intensity of illumination which activates the addition reaction of molecules of 1-octadecene to the Si atoms. The monolayer of 1-octadecene on the Si surface is stable and provides the chemical passivation of the surface. Two types of traps are found, namely, traps for holes and electrons, whose density can be varied during deposition of the monolayer by the choice of intensity of illumination and by the method of passivation of the surface. In the case of a low level of illumination and/or the use of the iodine passivation of the surface, the electron traps prevail, and, in the case of high intensity of illumination and/or hydrogen passivation of the surface, the hole traps prevail. It is shown that the use of these films provides conductivity in thin near-surface layers of Si due to providing the mode of flat bands or accumulation of carriers near the surface.     

Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures

A method for measuring the characteristics of tunneling and impact ionization in thin-film electroluminescent emitters is suggested. This method makes it possible to find time dependences of the space-charge layer thickness near the anode and the length of the impact ionization region, to determine more exactly the time dependence of the field in the potential barrier at the cathode interface, the maximum depth of the surface states from which electron tunneling occurs, the minimum thickness of the barrier, and the electron tunneling probability, as well as the impact ionization rate for the deep centers related to structural defects of the phosphor layer.     

Electric-discharge cleaning of surfaces of manufacturing equipment from foreign nonmetallic deposits

Processing characteristics of the electric-discharge cleaning of surfaces of manufacturing equipment from foreign nonmetallic deposits of different durability are researched. To expand the capabilities of the cleaning of manufacturing equipment, a complex cleaning method is proposed.     

BioFET sensor for detection of albumin in urine

Characterisation of a BioFET for detection of albumin in a mixture of human urine is presented. To avoid electrolyte effect of the urine, it was measured in PBS (phosphate buffer saline) at a fixed pH after albumin binding. The drain current was modulated by the albumin bound to the anti-albumin immobilised on the gate surface of the BioFET. The current variation ratio was likely to be proportional to the concentration of the albumin in the range 50-250 mg/1. The results show the feasibility of the BioFET as a urinary albumin sensor.     

A comparative study on the effect of VUV radiation in plasma SiOx-coated polyimide and polypropylene films

Wettability of polyimide (PI) and polypropylene (PP) films have been improved using SiO_x-like thin layers deposited from a mixture of hexamethyldisiloxane (HMDSO) and oxygen in a microwave distributed electron cyclotron resonance plasma reactor. The films wettability evolution behaviors were evaluated through the results of contact angle measurements, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The plasma depositions of SiO_x thin layers in presence of VUV radiation induce a contact angle decrease to about 7° and 35° for PI and PP films, respectively. XPS data showed that such difference in wettability is attributed to the increase of hydrophilic group's proportion at the surface of coated PI films due to VUV irradiation. AFM images showed that the PI surface topography remains relatively smooth when coated in presence of VUV radiation. However, in the case of PP films, AFM images revealed the growth of irregular structure due to a substrate etching effect supported by VUV radiation. For polymers coated without VUV irradiation, the deconvolution of the C1s peaks showed a significant decrease of CO bonds for both PI and PP substrates.     

La doping effects on intergrowth Bi2WO6–Bi3TiNbO9 ferroelectrics

La doping effects on intergrowth Bi₂WO₆–Bi₃TiNbO₉ ferroelectric ceramics were studied by X-ray diffraction, electron probe microanalysis and dielectric spectroscopy. It was found that the La³⁺ distribution, ferroelectric phase transition and dielectric relaxation behavior are apparently affected by La doping. With increasing La³⁺ content, the site of dopant ion varies, the grain growth of Bi₅TiNbWO₁₅ is restrained, the Curie temperature is reduced and broadened. Furthermore, two dielectric relaxation loss peaks were observed both in temperature and frequency spectra. The calculated relaxation parameters revealed the oxygen vacancy related to the relaxation process.     

Observation of calcium aluminate inclusions at interfaces between Ca-treated,Al-killed steels and slags

The evolution of Al₂O₃-CaO inclusions on molten steel surfaces and at molten steel/slag interfaces was observed in-situ through a confocal scanning laser microscope (CSLM) equipped with a gold-image furnace. Depending on the slag chemistry, some of the initially liquid inclusions evolved into irregular Al₂O₃ or SiO₂-enriched inclusions during the separation across the interface. Inclusions were found to cluster at specific locations at the steel/slag interface. Unlike capillary-depression-driven clustering, which is observed on molten steel surfaces, a weak repulsive force opposes fluid-flow-driven clustering at the steel/slag interface. After clustering, the irregular solid inclusions were observed to agglomerate to form large aggregates. This article is based on a presentation given in the Mills Symposium entitled “Metals, Slags, Glasses: High Temperature Properties & Phenomena,” which took place at The Institute of Materials in London, England, on August 22–23, 2002.     

Necessary optimality conditions in a nonsmooth control problem with variable structure

An optimal control problem with nonsmooth performance criterion described by a system of ordinary differential equations is considered. Necessary first-order optimality conditions are obtained.     

Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings.