曲线轮廓汉字的网格适配技术

要提高曲线轮廓汉字的还原质量, 需要在字形还原时采用网格适配技术本文介绍了网格适配的基本原理, 并在分析汉字字形还原失真现象的基础上, 给出了我们自己设计并实现的适合于曲线轮廓汉字特点的二种网格适配方法, 即动态的补象素算法和曲线轮廓汉字的技术     

超声波车辆车轴探头的研制与应用

提出了一种用于检测在役车辆车轴产生疲劳裂纹的超声波方法,设计了中心孔探头与斜角探头一起,完成了对车辆车轴的关键区域探伤。     

~（131）Ⅰ—MIBG比活度对鼠心肌交感神经囊泡内外摄取的影响

研究了两种比活度的１３１Ⅰ－ＭＩＢＧ在正常及利血平抑制后在鼠体内的分布，结果表明：注射后４ｈ，正常鼠心肌对３．２２ＴＢｑ／ｇ的ＭＩＢＧ摄取为９．０８％ＩＤ／ｇ，明显高于对１８．５ＧＢｑ／ｇ的摄取（４．８７％ＩＤ／ｇ）。计算表明，比活度主要影响了鼠心肌交感神经囊泡内摄取，而与囊泡外摄取无关．当ＭＩＢＧ用于心肌显像时，高比活度的ＭＩＢＧ有利于诊断。     

Deformation and fracture of glass bead/ CTBN-rubber/epoxy composites

Carboxyl-terminated butadiene-acrylonitrile-rubber decreases modulus and yield stress of the studied epoxy but increases fracture toughness. The addition of glass bead compensates for the loss in modulus but has little effect on yield stress. However, it significantly contributes to the fracture toughness by providing additional mechanisms for toughening of both the unmodified and rubber-modified epoxy. For the toughened epoxies studied, fracture surfaces gave only limited information on fracture mechanisms since significant energy absorption also occurs in the material below the fracture surface. Suggestions for suitable material compositions for fiber composite matrices are given.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A robust adaptive pole‐placement controller without strictly positive real condition

This paper considers the adaptive pole‐placement control problem for system (1) with unmodelled dynamics η_n dominated by a small constant ε multiplied by a quantity independent of ε but tending to infinity as the past input, output, and noise grow. Using bounded external excitation and randomly varying truncation techniques, we give a design method of adaptive pole‐placement controller. It is shown that the closed‐loop system is globally stable, the estimation error for the parameter contained in the modelled part is of order ε, and the closed‐loop system under the adaptive pole‐placement control law is suboptimal in the sense of $$\mathop{\lim\sup}\limits_{{n\to\infty }}{1\over n}\mathop{\sum}\limits_{i=0}^n{\left({A^{*}(z)y_{n}‐L(z)C(z)w_{n}‐B(z)R(z)y_{n}^{*}}\right)^{2}{\leq}O({\varepsilon}^{2})+\gamma^{2}\mathop{\sum}\limits_{j=1}^q{b_{j}^{2}}}$$\nopagenumbers\end while the SPR condition used usually in other papers is replaced by a stability condition. Copyright © 2001 John Wiley & Sons, Ltd.