Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures

A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.     

介质薄膜的透射光谱测量及其光学参数的分析

介绍介质薄膜透射光谱的测量以及基于分析薄膜透射光谱的计算薄膜光学参数的方法。对制备在玻璃基板上的二氧化钛、二氧化硅和氧化锌薄膜进行了可见光谱区的透射比测量，并用包络线方法和最优化方法对这些透明薄膜的光学参数进行了计算和分析。着重讨论了最优化方法在分析薄膜光学参数中的应用及其误差分析。此外，还对包络线方法和最优化方法进行了比较。     

添加物对Fe_2O_3超微粒的稳定作用

粒子的尺寸直接关系着气敏元件性能的好坏．为了防止Ｆｅ２Ｏ３超微粒在气敏元件烧结过程中长大，我们在纯Ｆｅ２Ｏ３中掺入５ｍｏｌ％碱土金属离子，利用ＸＲＤ和ＴＥＭ系统研究了掺杂物对Ｆｅ２Ｏ３超微粒子的稳定作用，并对由掺杂引起的Ｆｅ２Ｏ３电学性质的变化作了初步探讨．     

Analysis of the drude model in metallic films

A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi(2) and TaSi(2), films have been studied.     

Effect of carrier screening on ZnO-based resistive switching memory devices

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10⁵ at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

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A vacuum ultraviolet laser with a submicrometer spot for spatially resolved photoemission spectroscopy

Vacuum ultraviolet(VUV)lasers have demonstrated great potential as the light source for various spectroscopies,which,if they can be focused into a small beam spot,will not only allow investigation of mesoscopic materials and structures but also find application in the manufacture of nano-objects with excellent precision.In this work,we report the construction of a 177 nm VUV laser that can achieve a record-small(〜0.76 μm)focal spot at a long focal length(~45 mm)by using a flat lens without spherical aberration.The size of the beam spot of this VUV laser was tested using a metal grating and exfoliated graphene flakes,and we demonstrated its application in a fluorescence spectroscopy study on pure and Tm3+-doped NaYF4 microcrystals,revealing a new emission band that cannot be observed in the traditional up-conversion process.In addition,this laser system would be an ideal light source for spatially and angleresolved photoemission spectroscopy.     

Sensing mechanism of Ag/α-MoO3 nanobelts for H2S gas sensor

Sensing mechanism is still a big problem in the field of gas sensor.In-depth study of the sensing mecha-nism can provide better ideas for the design of sensing ...     

CALMODULIN1 and WRKY53 Function in Plant Defense by Negatively Regulating the Jasmonic Acid Biosynthesis Pathway in Arabidopsis

Jasmonic acid (JA) is an important hormone that functions in plant defense. cam1 and wrky53 mutants were more resistant to Spodoptera littoralis than in the wild-type (WT) Arabidopsis group. In addition, JA concentration in cam1 and wrky53 mutants was higher compared with the WT group. To explore how these two proteins affect the resistance of Arabidopsis plants, we used a yeast two-hybrid assay, firefly luciferase complementation imaging assay and in vitro pull-down assay confirming that calmodulin 1 (CAM1) interacted with WRKY53. However, these two proteins separate when calcium concentration increases in Arabidopsis leaf cells. Then, electrophoretic mobility shift assay and luciferase activation assay were used to verify that WRKY53 could bind to lipoxygenases 3 (LOX3) and lipoxygenases 4 (LOX4) gene promoters and negatively regulate gene expression. This study reveals that CAM1 and WRKY53 negatively regulate plant resistance to herbivory by regulating the JA biosynthesis pathway via the dissociation of CAM1-WRKY53, then the released WRKY53 binds to the LOXs promoters to negatively regulate LOXs gene expression. This study reveals WRKY53′s mechanism in insect resistance, a new light on the function of WRKY53.