Random properties of the highest level sequences of primitive sequences over Z(2/sup e/)

Using the estimates of the exponential sums over Galois rings, we discuss the random properties of the highest level sequences /spl alpha//sub e-1/ of primitive sequences generated by a primitive polynomial of degree n over Z(2/sup e/). First we obtain an estimate of 0, 1 distribution in one period of /spl alpha//sub e-1/. On the other hand, we give an estimate of the absolute value of the autocorrelation function |C/sub N/(h)| of /spl alpha//sub e-1/, which is less than 2/sup e-1/(2/sup e-1/-1)/spl radic/3(2/sup 2e/-1)2/sup n/2/+2/sup e-1/ for h/spl ne/0. Both results show that the larger n is, the more random /spl alpha//sub e-1/ will be.     

加入WTO后对中国会计业的影响

中国政府已于2001年12月正式加入做为当代世界规范和经济贸易关系最具权威的国际性组织WTO.加入WTO,对中国来说既是机遇,同时又是挑战,它的影响是全面的、全方位的.而对于中国会计业的影响也是深刻的,中国经济、中国企业要走向世界,中国的会计业也必须直面世界,按国际惯例行事,因此,深刻研究和分析加入WTO后对中国会计业的冲击、挑战以制定相应的政策、方针、准则就显得非常的迫切.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.     

烧结工艺对液相合成（SrPb）TiO3基陶瓷热敏特性影响的研究

本文在液相合成（ＳｒＰｂ）ＴｉＯ３粉的基础上，研究了升温速率、保温时间、烧结温度及降温方式对（ＳｒＰｂ）ＴｉＯ３基陶瓷的Ｖ型ＰＴＣ热敏特性的影响。实验表明：升温速率对其热敏特性影响不大，保温时间和烧结温度的作用是一致的，具有一最佳范围。而降浊方式对材料的热敏特性影响较大。综合各因素的影响，本配方中，样品的烧结制度定为：以２００℃／ｈ的速率升温，在１２５０℃保温１ｈ，炉冷至９５０℃，保温０．５ｈ，再     

Presupposition failure — A comedy of errors

Presuppositions of utterances are the pieces of information you convey with an utterance no matter whether your utterance is true or not. We first study presupposition in a very simple framework of updating propositional information, with examples of how presuppositions of complex propositional updates can be calculated. Next we move on to presuppositions and quantification, in the context of a dynamic version of predicate logic, suitably modified to allow for presupposition failure. In both the propositional and the quantificational case, presupposition failure can be viewed as error abortion of procedures. Thus, a dynamic assertion logic which describes the preconditions for error abortion is the suitable tool for analysing presupposition.     

大系统分散鲁棒容错控制的进展及主要成果

综述了近２０年来关联大系统分散鲁棒容错控制的研究动态及取得的主要成果。说明了统一地研究分散鲁棒容错控制的必要性。在分散控制、鲁棒控制和容错控制研究领域内，分析了各种设计方法的主导思想及实质；指出了这些研究成果的意义与存在的问题。文中着重论述了分散、鲁棒、容错控制研究方法的发展途径。