偏心椭圆高斯光束

在椭圆高斯光束横坐标中引入复数偏移量,将其推广为偏心椭圆高斯光束。在垂直于ｚ轴截面内强度分布仍然是椭圆高斯函数分布,在传播方向上光束峰值强度沿直线分布,波前也存在横向位移。对偏心椭圆高斯光束经一阶光学系统的变换关系进行了定量推导。对传播方向偏离ｚ轴的椭圆高斯光束经薄透镜传播时的特例进行了讨论。     

The effect of call admission policies on the system benefit of CDMA communication networks

Previous studies of call admission control (CAC) in mobile communication networks focused on call blocking and call dropping mechanisms. However, achieving global optimization of the system benefit is a complicated process. In this paper, we propose a benefit optimization model that accommodates as many users as possible, while simultaneously maintaining system-wide quality of service (QoS) in terms of admission control. To clarify the CAC concept, we construct a framework of CAC policies, derive associated interference models based on the framework, and then investigate the effects of the policies on the system benefit. In addition, to solve the complicated integer programming problem, we adopt the Lagrangean relaxation approach, and employ Lagrangean multipliers to perform sensitivity analysis of several parameters. The contribution of this study is twofold: the novel problem formulation and the improvement in the system benefit. The computational results demonstrate that the system accrues more benefit as new traffic is loaded and the number of users increases. Meanwhile, the sensitivity analysis shows that proper assignment of the strength of power-controlled signals is a key factor in the global optimization of the system benefit.     

Optoelectronic and microwave transmission characteristics of indium solder bumps for low-temperature flip-chip applications

This paper describes low-temperature flip-chip bonding for both optical interconnect and microwave applications. Vertical-cavity surface-emitting laser (VCSEL) arrays were flip-chip bonded onto a fused silica substrate to investigate the optoelectronic characteristics. To achieve low-temperature flip-chip bonding, indium solder bumps were used, which had a low melting temperature of 156.7/spl deg/C. The current-voltage (I-V) and light-current (L-I) characteristics of the flip-chip bonded VCSEL arrays were improved by Ag coating on the indium bump. The I-V and L-I curves indicate that optical and electrical performances of Ag-coated indium bumps are superior to those of uncoated indium solder bumps. The microwave characteristics of the solder bumps were investigated by using a flip-chip-bonded coplanar waveguide (CPW) structure and by measuring the scattering parameter with an on-wafer probe station for the frequency range up to 40 GHz. The indium solder bumps, either with or without the Ag coating, provided good microwave characteristics and retained the original characteristic of the CPW signal lines without degradation of the insertion and return losses by the solder bumps.     

Parametric studies of free-electron laser nonlinear ponderomotivetrapping buckets

Experimental and computational studies of free-electron lasers (FELs) operating at high input powers have been undertaken. These studies constitute a novel method of investigating saturation and trapping effects in free-electron lasers. Experiments and simulations show that when the input radiation power is increased to levels comparable to output power, the energy that maximizes the FEL gain shifts upwards. This effect is directly related to the height of the FEL ponderomotive trapping bucket (see J.S. Wurtele et al., 1990). By parametrically surveying the extent of this energy shift the authors observe the nonlinear trapping bucket phenomenon     

Optimization of polymer light emitting devices using TiOx electron transport layers and prism sheets

The internal and external efficiency of polymer light emitting devices were found can be simultaneously improved by insertion a high refractive index material, titanium oxide (TiO_x), to the emission layer and a prism sheet attached to the substrate. The TiO_x layer increased the internal efficiency due to a better electron injection and hole confinement. However, it led a wider angular emission profile with more photons trapped in the substrate. By using the prism sheet, those trapped light was efficiently coupled to the air. The extraction efficiency enhancement was increased from 33.1% to 54.4% and the overall current efficiency was improved up to 86%.     

Positively K+‐Responsive Membranes with Functional Gates Driven by Host–Guest Molecular Recognition

A novel positively K⁺‐responsive membrane with functional gates driven by host‐guest molecular recognition is prepared by grafting poly(N‐isopropylacrylamide‐co‐acryloylamidobenzo‐15‐crown‐5) (poly(NIPAM‐co‐AAB₁₅C₅)) copolymer chains in the pores of porous nylon‐6 membranes with a two‐step method combining plasma‐induced pore‐filling grafting polymerization and chemical modification. Due to the cooperative interaction of host‐guest complexation and phase transition of the poly(NIPAM‐co‐AAB₁₅C₅), the grafted gates in the membrane pores could spontaneously switch from “closed” state to “open” state by recognizing K⁺ ions in the environment and vice versa; while other ions (e.g., Na⁺, Ca²⁺ or Mg²⁺) can not trigger such an ion‐responsive switching function. The positively K⁺‐responsive gating action of the membrane is rapid, reversible, and reproducible. The proposed K⁺‐responsive gating membrane provide a new mode of behavior for ion‐recognizable “smart” or “intelligent” membrane actuators, which is highly attractive for controlled release, chemical/biomedical separations, tissue engineering, sensors, etc.     

Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors

AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.     

三峡大坝混凝土的耐久性问题

三峡大坝混凝土的耐久性是人们普遍关注的问题，而要提高其耐久性，必须首先提高混凝土原材料的品质，水泥、粉煤灰及砂的选择直接影响到混凝土的耐久性，必须认真对待。     

非线性时间序列数据中的关联维提取

本文将混沌方法引入具有非线性时间序列的降雨量分析。首先对有关混沌及关联维的概念作简单介绍,在确定降雨量数据具有混沌特征后,对其进行关联维提取,得到颇具意义的结果。     

A comparative study and performance characteristics of ion-implanted and heterojunction short-wave infrared HgCdTe focal-plane arrays

Short-wave infrared (SWIR) HgCdTe focal-plane arrays (FPAs) with a cutoff wavelength of 2.5 μm have been produced using both planar ion-implanted and heterojunction-mesa device structures. The two-dimesnional FPAs are comprised of a 320×256 format with 30-μm pixel pitch and are cooled by a multistage thermo-electric (TE) cooler. Measured R₀A values of the two types of device structures show similar results below about 130 K because of the performance-limiting effect of the surface passivation of the heterojunction. However, a substantial difference is seen above 130 K and up to 300 K between the two structures types, with the heterojunction-mesa p-on-n device having an order of magnitude higher R₀A value than the planar ion-implanted n-on-p configuration. The difference in the R₀A values is reflected in the FPA images of the two different device types, where at 200 K, both FPAs display a clear picture with the n-on-p implanted device having a somewhat lesser resolution. However, no image can be seen from the planar-implanted FPA at 300 K, whereas the heterojunction-mesa FPA still exhibits a notable image at this temperature. These differences are examined and are attributed largely to higher diffusion and generation-recombination (g-r) currents that are thought to be prevalent in the ion-implanted n-on-p device structure. Yet, baking studies carried out show the ion-implanted diodes to be slightly more robust, as experiments reveal that they tend to survive a 120°C heat treatment longer than the mesa devices, which tend to degrade after a certain period of time. The nature of n-type donors in ion-implanted diodes is discussed, and a new theory based on Te antisites is proposed to explain recent experimental findings.