Enhancement of islanding-detection of distributed generation systems via wavelet transform-based approaches

In this paper, a wavelet transform-based approach is proposed to detect the occurrence of islanding events in distributed generation systems. Thanks to time–frequency localization capabilities exhibited by wavelet transform, the approach embedded with this transform technique has grasped the appearance of the islanding event in a highly effective manner. Moreover, for those regions which are in need of a better visualization, the proposed approach would serve as an efficient aid such that the mains power disconnection can be better distinguished. To validate the feasibility of this approach, the method has been validated through several scenarios. Test results supported the effectiveness of the method for the application considered.     

β″－Al_2O_3陶瓷的强化和韧化

研究了稳定ＺｒＯ＿２和部份稳定ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的强化和韧化作用，观察了不同种类、不同含量的ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的显微结构、力学性能和电导率的影响，探讨了β″－Ａｌ＿２Ｏ＿３的韧化机理。     

Determination of the width of the transition layer between the crystalline and amorphous zones in nylon 1010 by SAXS

The width of the transition layer between the crystalline and amorphous zones in nylon 1010 was determined by SAXS with point collimation and long-slit collimation, respectively. The width of the transition layer, E, was found to be 1.7 nm. The results show that the width of the transition layer is independent of crystallinity.     

Lamp configuration design for rapid thermal processing systems

We have studied lamp configuration design for rapid thermal processing (RTP) systems. We considered a configuration consisting of four concentric circular lamp zones, three of them above the wafer and one circumventing the wafer. We propose a method to determine the geometric parameters, the width, height and radius, of the lamp zones so that the configuration designed has the capacity to achieve a uniform temperature on the wafer. The method is based on a necessary and sufficient condition for uniform temperature tracking and analytic expressions of the view factors. A design example is given in which a least square open-loop control law yields good temperature uniformity     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)