Energy Efficiency of Corona Discharge Reactor Driven by Inductive Energy Storage System Pulsed Power Generator

Characteristics of a pulse corona reactor driven by an inductive energy storage (IES) pulsed power generator are described in this paper with focusing on the influence of streamer-to-glow transition on NO removal efficiency. A pulsed high voltage with a short rise time of under 30 ns is employed to generate streamer discharges homogeneously in whole the discharge region. Fast recovery diodes are used as semiconductor opening switch (SOS) to shorten the rise time. The various resistors are employed as dummy load to clarify a suitable circuit parameter such as the capacitance of a primary energy storage capacitor and/or the inductance of a secondary energy storage inductor. The energy transfer efficiency of the pulsed power generator has a maximum value of 50% at 714 Omega dummy load resistance. A co-axial cylinder type discharge chamber was used as the corona discharge plasma reactor driven by the IES pulsed power generator. The pulsed power generator supplies 30 kV pulse with 300 pps repetition rate. The co-axial cylinder plasma reactor consists of 1 mm diameter tungsten wire and 19 mm i.d. copper tube with 30 cm length. NO removal from the simulated diesel engine exhaust gas (N₂:O₂=9:1, Initial NO concentration=200 ppm) increased with input energy into the reactor. The energy efficiency for NO removal was obtained to be 25 g/kWh at 30 % removal in gas flow rate of 2 L/min. However, the energy efficiency decreased to 5 g/kWh with increasing capacitance of the primary capacitor from several hundreds pF to several nF. This decrease was caused by a streamer-to-glow transition. The efficiency was affected by oxygen concentration in the gas mixture.     

Super‐reflective color LCD with PDLC technology

Abstract— A novel reflective color LCD without polarizers has been developed using a PDLC film and a retro‐reflector. Bright color images including moving images are achievable with ambient light. This novel LCD will enable the new application area of electronic paper.     

Ultrafast deposition of microcrystalline silicon films using high-density microwave plasma

For fast deposition of microcrystalline silicon (μc-Si:H) films, a microwave-induced high-density plasma source is developed. By using this plasma source, highly crystallized μc-Si:H films can be deposited from SiH₄+He plasma without even using H₂ dilution and substrate heating. A systematic deposition study shows that the film deposition rate increases with increase in the input microwave power and the SiH₄ flow rate. The film crystallinity also improves with power but degrades with increase in the SiH₄ flux. After optimizing the plasma conditions, the deposition of a highly crystallized μc-Si film has been realized at an ultrafast deposition rate higher than 700 nm/s.     

Investigation of electrical properties of a 120 cm PSC using an inner spark pulser

Characteristics of fast pulse propagation in a large planar spark counter (PSC) are simulated using a pulser located inside the spark gap. Besides the main mode of pulse propagation, three undesirable modes are observed. These latter strongly distort the shape of the pulse. Characteristics of these modes and methods to eliminate their effects are demonstrated. We present an electrical design for a 120 cm spark counter along with some of its electrical properties as revealed by measurements made with the inner spark pulser. In the present counter design the charge of a pulse is shared by several neighboring strips, enabling one to measure the transverse position of a spark to a high degree of accuracy.     

Crystal structure and physical properties of a magnetic molecular conductor (EDO-TTFVODS)2FeCl4

Crystal structure, and electrical conducting and magnetic properties of a radical cation salt of EDO-TTFVODS with magnetic FeCl₄^? ion, (EDO-TTFVODS)₂FeCl₄ (EDO-TTFVODS = ethylenedioxytetrathiafulvalenoquinone-1,3-diselenolemethide) are reported. In this salt, there are two independent donor molecules formed two different layers A and B, and the counter FeCl₄^? ions layer is sandwiched between two donor layers A and B along the b-axis. The donor molecules form the one-dimensional columns along the a-axis in both donor layers. This salt shows high conductivity at room temperature (σ_RT = 25 S cm^?1) and a metallic behavior down to ca. 80 K, where a metal–insulator transition however occurs. The magnetic susceptibility obeys a Curie–Weiss law (Curie constant C = 4.42 emu K mol^?1 and Weiss temperature Θ = ?1.5 K), without any magnetic ordering down to 1.8 K. This result suggests the weak antiferromagnetic interaction between the d spins of FeCl₄^? ions.     

1.3?m InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode

A novel 1.3?m InGaAsP/lnP distributed-feedback buried-heterostructure laser diode on p-type InP substrate has been developed utilising a dopant diffusion technique. The laser has achieved a threshold current as low as 20 mA and high output power of 32 mW under CW and SLM operation.     

The homotopy model: a generalized model for smooth surface generation from cross sectional data

A generalized model, called the homotopy model, is presented to reconstruct surfaces from cross-sectional data of objects using a homotopy to generate surfaces connecting consecutive contours. The homotopy model consists of continuous toroidal graph representation and homotopic generation of surfaces from the representation. It is shown that the homotopy model includes triangulation as a special case and generates smooth parametric surfaces from contour-line definitions using homotopy. The model can be applied to contours represented by parametric curves as well as linear line segments. First, a heuristic method that finds the optimal path on the toroidal graph is presented. Then the toroidal graph is expanded to a continuous version. Finally, homotopy is used for reconstructing parametric surfaces from the toroidal graph representation. A loft surface is also a special case of homotopy, a straight-line homotopy. Homotopy that corresponds to the cardinal spline surface is also introduced. Three-dimensional surface reconstruction of human auditory surface reconstruction of human auditory ossicles illustrates the advantages of the homotopy model over the others.     

Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs

The interface stress at InGaPAs/GaAs heterostructure has been investigated using the energy shift and splitting of the Cr-related zero-phonon photoluminescence line at 0.839 eV observed in GaAs. It has been found that the GaAs substrate suffers both compressive uniaxial stress and tensile hydrostatic pressure at the InGaPAs/GaAs heterointerface. These shifts and splittings of the 0.839 eV line have been systematically examined as a function of the lattice mismatch between InGaPAs and GaAs, and the thicknesses of the epitaxial-layer and substrate. The amount of the interface stress existing at InGaPAs/GaAs heterostructure has been estimated, based on uniaxial stress data for GaAs: Cr wafers.