The new two-dimensional electron gas base HBT (2DEG-HBT):two-dimensional numerical simulation

The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f_T is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C _bc^EXT. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F_T (88 GHz) and current gain h_FE (760) are obtained for an emitter size of 1×10 μm², and undoped collector thickness of 150 nm, and a collector current density J_c of 10⁵ A/cm². The FET operation of the same 2DEG-HBT structure shows a threshold voltage V_th of 0.74 V, the transconductance G_m^max of 80 mS/mm, and maximum cutoff frequency F_T^max of 15 GHz. The dependence of the device performance on material parameters is analyzed extensively from a device design point of view     

Scientific Screening of Raw Diamond for an Ultraprecision Cutting Tool with High Durability

The wide scattering in tool life of natural mono-crystalline diamond tools is considered to depend on intrinsic crystalline defects due to nitrogen impurities in raw diamond. In this paper, the correlation was investigated between the amounts and types of the impurity evaluated by infrared absorption (IRA) and the crater wear and chipping resistances. As a result, diamonds including less total amount of impurity show larger wear resistance and that with larger amount of B2-aggregates show larger chipping resistance. This suggests that the inspection by IRA can be a useful method for screening of raw diamond for highly durable cutting tools.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

A reconfigurable VLSI-based double-lens tracking camera

Watching and tracking an object while seeing a much wider view is one of advantages of the eye system. We proposed and developed a tracking camera system that mimics the eyes by using double-lens modules. In the system, a wide view is captured through the wide-lens module, while the target in it is tracked and magnified through the telescopic lens module. Electronic circuits for tracking control are implemented onto the reconfigurable VLSI or FPGA in order to embed the parallelism in the tracking algorithm into the hardware. A successfully developed FPGA-based prototype performs high-speed tracking at the video-rate. This work was present in part at the 12th International Symposium on Artificial Life and Robotics, Oita, Japan, January 25–27, 2007     

Contribution of IL-1 beta to the enhancement of Campylobacter rectus lipopolysaccharide-stimulated PGE2 production in old gingival fibroblasts in vitro

Campylobacter rectus is associated with adult periodontitis. We previously reported that C. rectus lipopolysaccharide (LPS)-stimulated prostaglandin E2 (PGE2) production in old cells of human gingival fibroblasts (HGFs) is higher than that in young cells. The present study examined whether an enhancement of C. rectus LPS-stimulated interleukin (IL)-1 beta production in old HGFs contributed to the increased production of PGE2. LPS was prepared from C. rectus ATCC33238. HGFs were established from healthy gingiva in three patients, aged 10-12 years. Cellular aging in culture was determined with increasing doubling. The cultured cells were treated with LPS (0.01-10 micrograms/ml), and the amount of IL-1 beta in the medium was measured after a 24 h incubation. The LPS-stimulated IL-1 beta production in each old cell (corresponding to 57-67% of complete life-span) was increased (1.6-2.6 times) compared to that in the young cells (corresponding to 17-20% of the life-span). The IL-1 beta mRNA synthesis in the presence of LPS in the old cells was higher than that in the young cells. The enhancement of LPS-stimulated PGE2 production was inhibited by anti-IL-1 beta antibody and by IL-1 receptor antagonist. These findings suggest that the greater ability of old cells to produce PGE2 in response to C. rectus LPS is due to their greater level of IL-1 beta.     

Growth Morphology and Mechanism of a Hollow ZnO Polycrystal

When zinc oxide and graphite were placed into an alumina crucible, with a square hole (∼3 mm ×∼3 mm) near the top, and the crucible was covered by an alumina lid and heated at >1050°C, a hollow polycrystal composed of needlelike, ribbon(comb)-like, dendritic, and bulk zinc oxide crystals grew from the hole toward the outside of the crucible. The diameter and length of the polycrystal grown at 1050°C after 1 h were ∼2.2 mm and ∼20 cm, respectively. The diameter increased, while the length decreased, with increasing temperature. Most of the needlelike zinc oxide crystals in the hollow polycrystal were elongated along the c -axis.     

On the accuracy and efficiency of substrate current calculationsfor sub-μm n-MOSFET's

The accuracy and efficiency of the self-consistent (regarding the electric field) Monte Carlo model, nonself-consistent Monte Carlo model, and the soft-threshold lucky electron model (LEM) for the calculation of substrate currents in deep sub-μm n-MOSFET's are investigated. While the two Monte Carlo models are in good agreement with the experiment, the simpler LEM model still gives reasonable results even for a 0.16 μm n-MOSFET. On the other hand, huge differences in the CPU time consumption are found and the LEM is about four orders of magnitude faster than the self-consistent Monte Carlo simulations. The nonself-consistent calculations are only one order of magnitude slower than the LEM. The good agreement with the experiment is obtained without considering the so-called surface impact ionization or any fitting of parameters on the device level