Stereoscopic synthesized brain-surface imaging with MR angiography for localization of a peripheral mycotic aneurysm: case report

A patient with subacute bacterial endocarditis and a peripheral mycotic aneurysm is presented. We used a combined multi-slice surface anatomy scanning (SAS) and contrast-enhanced MR angiography image to determine the exact location of the small lesion by applying a skin marker on the scalp and visualizing the relationship of the marker to the brain surface structures and to the lesion. This technique was useful for the removal of a small peripheral aneurysm using only a limited craniotomy.     

Applications of the 4×4 determinant method and the POLYGON ENGINE

In the first half of the paper, various types of processing pertaining to a polygon, using the 4×4 determinant theories are explained along with a new containment test algorithm of a point in a polygon. In the latter half of the paper, a general-purpose geometric processor, the POLYGON ENGINE, is presented which can deal with various types of interference problems, such as Boolean operations in solid modelling, hidden line and surface eliminations, ray tracing and so on. It is, a successor of the TRIANGLE PROCESSOR and is also based upon the 4×4 determinant theories [4–6]. While the TRIANGLE PROCESSOR processes a triangulated polygon on a triangle-by-triangle basis, the POLYGON ENGINE can treat a polygon without triangulation. The latter is expected to be more functional, more efficient and easier to use.     

Electrophoretic Deposition Behavior of Aqueous Nanosized Zinc Oxide Suspensions

The rheological behavior and electrophoretic deposition (EPD) of ZnO nanopowder (nano-ZnO) in aqueous media have been described. A cationic polyelectrolyte (polyethylenimine, PEI) was used to disperse and modify the surfaces of the ZnO nanoparticles. The rheological properties of the ZnO aqueous suspension were investigated by measuring the viscosity versus the pH and amount of dispersant. The EPD processing was conducted via cathodic electrodeposition, using stable suspensions with low viscosity, and the depositional behavior was investigated. Bubble-free nano-ZnO deposits with uniform microstructures were successfully obtained, which was an indication of good sintering behavior.     

The new two-dimensional electron gas base HBT (2DEG-HBT):two-dimensional numerical simulation

The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f_T is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C _bc^EXT. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F_T (88 GHz) and current gain h_FE (760) are obtained for an emitter size of 1×10 μm², and undoped collector thickness of 150 nm, and a collector current density J_c of 10⁵ A/cm². The FET operation of the same 2DEG-HBT structure shows a threshold voltage V_th of 0.74 V, the transconductance G_m^max of 80 mS/mm, and maximum cutoff frequency F_T^max of 15 GHz. The dependence of the device performance on material parameters is analyzed extensively from a device design point of view     

Scientific Screening of Raw Diamond for an Ultraprecision Cutting Tool with High Durability

The wide scattering in tool life of natural mono-crystalline diamond tools is considered to depend on intrinsic crystalline defects due to nitrogen impurities in raw diamond. In this paper, the correlation was investigated between the amounts and types of the impurity evaluated by infrared absorption (IRA) and the crater wear and chipping resistances. As a result, diamonds including less total amount of impurity show larger wear resistance and that with larger amount of B2-aggregates show larger chipping resistance. This suggests that the inspection by IRA can be a useful method for screening of raw diamond for highly durable cutting tools.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

High-performance carbon counter electrode for dye-sensitized solar cells

Here, we reported that a new carbon electrode prepared with an activated carbon was superior to a Pt sputtered electrode as the counter electrode of dye-sensitized solar cells. The photovoltaic performance was largely influenced by the roughness factor of carbon electrode. The open-circuit voltage increased by about 60 mV using the carbon counter electrode compared to the Pt counter electrode because of positive shift of the formal potential for I₃⁻/I⁻ couple.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Relation between microstructure, properties and spark plasma sintering (SPS) parameters of pure ultrafine WC powder

A combined experimental/numerical methodology is developed to fully consolidate pure ultrafine WC powder under a current-control mode. Three applied currents, 1900, 2100 and 2700 A, and a constant pressure of 20 MPa were employed as process conditions. The developed spark plasma sintering (SPS) finite-element model includes a moving-mesh technique to account for the contact resistance change due to sintering shrinkage and punch sliding. The effects of the heating rate on the microstructure and hardness were investigated in detail along the sample radius from both experimental and modeling points of view. The maximum hardness (2700 HV10) was achieved for a current of 1900 A at the core sample, while the maximum densification was achieved for 2100 and 2700 A. A direct relationship between the compact microstructure and both the sintering temperature and the heating rate was established.